PAM XIAMEN offers Multilayer Graphene on Nickel foil: 2″”x2″” and Pyrolytic Graphite Substrate & Foam.
Isomolded Graphite Plate, Fine Ground, 0.125″T x 4″W x 4″L for Fuel Cell
Pyrolytic Graphite Substrate, C axis Textured, 10x10X0.5 mm, One Side Polished
Pyrolytic Graphite Substrate, C axis Textures, 1″W x [...]
2019-05-06meta-author
PAM XIAMEN offers 4″ Silicon Wafer.
Diameter
Type
Dopant
Growth
method
Orientation
Resistivity
Thickness
Surface
Grade
100
N
Phos
CZ
-100
1-20
500-550
P/E/WTOx
100
N
Phos
CZ
-100
1-50
2900-3100
P/E
PRIME
100
N
Phos
CZ
-100
50-70
4850-5050
P/E
PRIME
100
N
Phos
CZ
-100
1-50
5900-6100
P/E
PRIME
100
N
Phos
CZ
-100
>10
9900-10100
P/P
PRIME
100
N
Phos
CZ
-111
1-10
4000-6000
P/E
PRIME
100
N
Phos
FZ
-111
> 20000
275-325
P/E
PRIME
100
N
Phos
FZ
-111
> 20000
275-325
P/P
PRIME
100
N
Phos
FZ
-111
2000-4000
275-325
P/P
PRIME
100
N
Phos
CZ
-111
450-500
P/P
PRIME
100
N
Phos
FZ
-111
> 20000
475-525
P/P
PRIME
100
N
As
CZ
-111
.001-.005
500-550
P/E
PRIME
100
N
Phos
CZ
-111
1-20
500-550
P/E
PRIME
100
N
Phos
FZ
-111
2000-4000
500-550
P/P
PRIME
100
N
Phos
CZ
-111
1-20
4800-5200
P/E
PRIME
100
N
Phos
CZ
-111
1-3
11300-11500
P/E
PRIME
100
N
Phos
CZ
-110
450-500
P/P
PRIME
100
N
Phos
CZ
-110
1-20
500-550
P/E
PRIME
100
P
Boron
CZ
(100)-4
0.01-0.02
175-225
P/P
PRIME
100
P
Boron
CZ
(100)-4
0.01-0.02
200-250
P/E
PRIME
100
P
Boron
CZ
(100)-4
0.01-0.02
325-375
P/P
PRIME
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth [...]
2019-03-04meta-author
Highlights
•Aberration-corrected TEM and EELS reveal structural and elemental profiles across GaAs/Si bond interfaces in wafer-bonded GaInP/GaAs/Si – multi-junction solar cells.
•Fluctuations in elemental concentration in nanometer-thick amorphous interface layers, including the disrubutions of light elements, are measured using EELS.
•The projected widths of the interface layers [...]
The effect of GaN and ain buffer layers on GaN film properties grown on both C-plane and A-plane sapphire
This paper presents a comparative study of the properties of GaN grown by organometallic vapor phase epitaxy, using both a GaN and A1N buffer layer, as [...]
2013-04-03meta-author
Effect of Mn on the low temperature growth of GaAs and GaMnAs
With the combined use of reflection high energy electron diffraction (RHEED) and scanning tunneling microscope, the growing surfaces of GaAs and GaMnAs were investigated. At the start of GaAs growth at low temperature [...]
PAM-XIAMEN can provide etching silicon wafer in P type and N type, more specifications please see: https://www.powerwaywafer.com/silicon-wafer/etching-wafer.html. The etching of silicon wafers is divided into isotropy and anisotropy, shown as Fig. 1. Isotropy etching means that the etching rate of silicon in all directions is the same during the etching process, [...]
2022-07-01meta-author