PAM XIAMEN offers 4″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
Intrinsic Si:-
[211] ±0.1°
4″
275
P/P
FZ >3,000
SEMI Prime, TTV<2μm
Intrinsic Si:-
[111] ±0.5°
4″
500
P/P
FZ >25,000
SEMI Prime
p-type Si:B
[110] ±0.5°
4″
525
P/E
4-6
SEMI Prime, 2 Flats at [111], Secondary 70.5° CW from PF
p-type Si:B
[110]
4″
525
P/E
2-10
PF<111> SF 109.5°
p-type Si:B
[100]
4″
300
P/E
800-5,400
SEMI Prime
p-type Si:B
[100]
4″
500
P/P
10-20
SEMI Prime
p-type Si:B
[100]
4″
3000
P/E/P
10-15
SEMI Prime, Individual cst
p-type Si:B
[100-6°]
4″
250
P/E
8-12
SEMI Prime
p-type Si:B
[100]
4″
275
P/P
7-14
SEMI Prime, TTV<5μm
p-type Si:B
[100]
4″
300
P/E
7-14
SEMI Prime, TTV<5μm
p-type [...]
2019-03-05meta-author
PAM-PL01 series detectors are linear pixel electrode structured detector based on CZT crystal, they can counting X-ray and imaging.
1. Specification of CZT Photon Counting Linear Array Detector
Size
16 pixels
Detector crystal
CdZnTe
Crystal Density
5.8g/cm3
Volume resistivity
>1010Ω.cm
Dimension
16.5×4.4 mm2
Thickness
2.0 mm
Pixel array
16×1
Pixel size
0.9×2.0mm2
Electrode material
Au
Standard working voltage
-450V
Max. working voltage
600V
Single pixel leakage current
<0.1nA
Max. counting rate
>0.7Mcps/mm2
Operation temperature
25℃~35℃
Storage temperture
10℃~40℃
Storage [...]
2019-04-24meta-author
PAM XIAMEN offers (100) orientation Silicon Substrates.
Below is just a small selection. Let us know if you can use or if we can quote you on another spec.
Item
Material
Orient.
Diam
(mm)
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
PAM2929
n-type Si:P
[100]
4″
525
P/E
43657
SEMI Prime, 2Flats, Empak cst
PAM2930
n-type Si:P
[100]
4″
525
P/E
43657
SEMI Prime, 2Flats, Empak cst
PAM2931
n-type Si:P
[100]
4″
224
P/E
5–10
SEMI Flats (two), Empak cst, Cassette of [...]
2019-02-22meta-author
Progress in bulk GaN growth*
Three main technologies for bulk GaN growth, i.e., hydride vapor phase epitaxy (HVPE), Na-flux method, and ammonothermal method, are discussed. We report our recent work in HVPE growth of GaN substrate, including dislocation reduction, strain control, separation, and doping of [...]
2018-05-29meta-author
PAM XIAMEN offers 4″ FZ Prime Silicon Wafer-7
4″ FZ Si wafer
N type
Orientation (100)
Thickness 500±15μm
Resistitvity>2000Ωcm
DSP
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Our goal is to meet all of your requirements, no matter how small orders and how difficult questions they may be, to [...]
2019-10-18meta-author
PAM XIAMEN offers Niobium( Nb) substrate ( Polycrystalline).
Niobium( Nb) substrate ( Polycrystalline) , 10x10x0.5 mm, 1 side polished
Niobium( Nb) substrate ( Polycrystalline)
Purity: 99.5%
Size: 10x10x0.5 mm
Surface finish: One side optical polished
Surface finish (RMS or Ra) : N/A
General Properties [...]
2019-05-08meta-author