PAM XIAMEN offers 3″ Silicon Wafer-21
Si wafer
Orientation: (111) ± 0.5°
Type: p-type
Dopant: B
Diameter: 76.2 ± 0.3 mm
Thickness: 380 ± 25 um
Disorientation: 2° to <11-2>
Resistivity: < 0.002 Ohm*cm
Single side polished
C Boron > E20 atom/cm3
Oi < 1E18 atom/cm3
[...]
2020-03-18meta-author
PAM XIAMEN offers SiO2 (single crystal quartz).
Single crystal quartz wafer is an excellent substrate for microwave filters for wireless communication industries.
Conversion from the three-index system to the four as [u ‘ v ‘ w ‘ ] —> [u v t w] is [...]
2019-05-15meta-author
Below is the regular standard specification of Polycrystalline back sealed polished wafer, please kindly note in this size, normally notch is used, rather than flat.
Si Wafer with back seal poly+SiO2
1. Polycrystalline Back Sealed Silicon Wafer Specification
Parameter
Unit
PAM210305-SI
Grade
—
Polycrystalline back sealed polished wafer
General Characteristics
—
—
Growth Method
—
CZ
Diameter
mm
200±0.2
Type
—
N
Crystal Orientation
—
<100>±0.5
Dopant
—
AS
Electrical Characteristics
—
—
Resistivity
Ω•cm
0.002-0.004
RRG [...]
2021-03-25meta-author
The structures of InxGa1-xAsyP1-y (indium gallium arsenide phosphide) quantum well epitaxially grown on InP substrate can be purchased or customized from PAM-XIAMEN. By adjusting the composition of x and y, the coverage wavelength range is from 870nm (GaAs) to 3.5um (InAs), which includes the optical [...]
2021-10-25meta-author
The development stages of semiconductor wafers are elemental semiconductor, compound semiconductor and wide bandgap semiconductor, as shown in the Fig. 1. Semiconductor wafers can be divided into narrow band gap semiconductors and wide band gap semiconductors according to different band gaps. Wide Band Gap [...]
2019-03-21meta-author
With the continuous progress of semiconductor technology, semiconductor devices such as LEDs, photovoltaic cells, semiconductor lasers, etc. have been widely used in people’s daily life and work. In order to ensure the quality and cost control in the production process of the semiconductor device, [...]
2022-09-26meta-author