Nyheder

Study on High Thermal Conductivity AlN Thin Films Sputtered at Low Temperature

PAM-XIAMEN can provide aluminum nitride (AlN) thin films with high thermal conductivity, please refer to the page for more specifications: https://www.powerwaywafer.com/aln-single-crystal-substrate-template-4.html 1. Research Background of Low-Temperature Sputtering Deposition of Submicron Aluminum Nitride Thin Film The generation of heat affects the performance and lifespan of almost all modern electronic devices. This is particularly true [...]

Thermophysical Characterization and Phonon Thermal Transport Study of Surface Activated Bonding 4H-SiC

PAM-XIAMEN can supply SiC wafers for bonding applications, more specifications please found in https://www.powerwaywafer.com/sic-wafer/sic-wafer-substrate.html. 4H-SiC has a wide bandgap (3.27 eV) and a high critical breakdown field strength (~2.8 MV/cm), making it an ideal semiconductor for manufacturing high-frequency, high-temperature, and high-power electronic devices. At present, epitaxial growth technology is a [...]

Research on Rapid Growth of Crackless AlN Films on Sputtered AlN/Sapphire Surface by Introducing High Density Nano-voids

PAM-XIAMEN can offer sapphire based AlN template, specific parameters can be found in: https://www.powerwaywafer.com/2-inch-aluminum-nitride-aln-template-on-sapphire.html At present, the main technological path is to prepare AlN based materials and devices through heteroepitaxy on substrates such as sapphire. Obtaining high crystal quality heteroepitaxial AlN based materials is the key to the industrialization technology of [...]

Study on Artificial Intelligence Non-Destructive Characterization of SiC Single Crystals

SiC wafers are available for high-frequency and high temperature electronic devices, more wafer specifications please see https://www.powerwaywafer.com/sic-wafer. Silicon carbide (SiC) has been widely used in high-voltage, high-frequency, and high-temperature electronic devices due to its excellent electrical properties. However, traditional SiC crystal PVT growth is considered a “blind box”, and crystal [...]

Study on Spontaneous Polarity Reversal Atomic Mechanism of AlN Grown on Sapphire

PAM-XIAMEN can offer sapphire based AlN template, more specifications please refer to https://www.powerwaywafer.com/2-inch-aluminum-nitride-aln-template-on-sapphire.html The interface is the foundation of device design and also the core of material growth control. In the 1980s, Japanese scientists achieved the epitaxy of nitride materials for the first time. However, for more than 30 years, there is still [...]

Forskning i 4H-SiC-baserede MEMS-tryksensorer i ekstreme miljøer

In the fields of aerospace engines, geothermal development, and automotive electronics, there is a widespread demand for pressure measurement under extreme high temperature conditions. For a long time, silicon-based microelectromechanical systems (MEMS) pressure sensors have been widely used, with the advantages of miniaturization and high accuracy. However, the inherent [...]

Undersøgelse af diffusionsadfærd af overgangsmetaller i SiC-wafer

PAM-XIAMEN can offer SiC wafers for researches on diffusion behavior of transition metals, additional specifications please refer to https://www.powerwaywafer.com/sic-wafer. Silicon carbide (SiC) is an important material for developing high-power, high-temperature resistant, and high-frequency switching devices due to its superior performance. In order to achieve high-performance devices, it is necessary to reduce defects [...]

Effekt af ultraviolet stråling på ledningsevne af AlN

PAM-XIAMEN can provide AlN substrates with various sizes, specifications can be found in https://www.powerwaywafer.com/aln-substrate.html. Aluminum nitride (AlN) has a 6.1eV ultra wide bandgap, which is attractive for manufacturing high-power and high-voltage electronic products, and also has the potential for deep ultraviolet optoelectronics in the wavelength range of about 200nm. However, broadband gap [...]

Bi/SiC-materialesystem lovende for Quantum Spin Hall-effekt

PAM-XIAMEN can offer SiC substrate for quantum spin hall effect researches, specifications please refer to https://www.powerwaywafer.com/sic-wafer/sic-wafer-substrate.html. In quantum spin Hall (QSH) materials, the direction of electron spin is consistent with the direction of motion, making it promising for non dissipative spintronic devices. However, in the currently implemented QSH systems, the [...]

Siliciumcarbid (SiC) Spin Quantum Bit Process

SiC wafers can be supplied for studying spin quantum bit, more sepcifications please found in https://www.powerwaywafer.com/sic-wafer. Quantum computers have the potential to solve some scientific problems that even top supercomputers cannot solve today, and quantum sensors may be able to measure signals that are difficult for the most sensitive sensors [...]