Photomask blank with antireflective chromium is available. Photomasks are mainly used in integrated circuits, flat panel displays (including LCD, LED, OLED), printed circuit boards and other fields. The photomask is a pattern master used in the photolithography process in microelectronics manufacturing. Here are specifications [...]
2021-11-09meta-author
PAM XIAMEN offers 4″ Silicon Wafer.
Diameter
Type
Dopant
Growth
method
Orientation
Resistivity
Thickness
Surface
Grade
100
P
Boron
CZ
-111
1-20
450-500
P/P
PRIME
100
P
Boron
CZ
-111
1-20
500-550
P/E
PRIME
100
P
Boron
CZ
-110
1-20
450-500
P/P
PRIME
100
P
Boron
CZ
-110
1-20
500-550
P/E
PRIME
100
Any
Any
CZ
Any
Any
350-600
P/E
TEST
100
Undoped
VGF
-100
>1E7
500-600
P/P
100
Undoped
VGF
-100
>1E7
500-600
P/P
100
N
Si
VGF
-100
600-650
P/E
PRIME
100
P
Zn
VGF
(100) off 2 deg twd <110>
0.01
375-425
P/E
epi
100
P
Zn
VGF
-100
600-650
P/E
PRIME
100
Si
Undoped
VGF
-100
>1E7
600-650
P/E
PRIME
100
Si
Undoped
VGF
-100
10000000
610-660
P/P
EPI
100
Undoped
CZ
-100
>30
450-500
P/P
EPI
100
Undoped
CZ
-100
>30
500-550
P/E
EPI
100
N
Sb
CZ
(100)-9
<.4
150-200
P/E
EPI
100
N
Sb
CZ
-100
.005-.02
450-500
P/P
EPI
100
N
Sb
CZ
-100
.005-.02
500-550
P/E
EPI
100
P
Ga
CZ
-100
.01-.04
450-500
P/P
EPI
100
P
Ga
CZ
-100
.01-.04
500-550
P/E
EPI
100
N
Si
VGF
-100
600-650
P/E
PRIME
100
Si
Fe
VGF
-100
5000000
600-650
P/E
PRIME
100
Single Wafer Shipper
ePak
Holds1Wafer
PRIME
100
Shipping Cassette
ePak
Holds25Wafers
Clean Room
101.6
N
Phos
CZ
-100
1-20
300-350
P/P
101.6
N
Phos
CZ
-100
1-20
350-400
P/E
101.6
P
Boron
CZ
-100
1-20
300-350
P/P
101.6
P
Boron
CZ
-100
1-20
350-400
P/E
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material [...]
2019-03-04meta-author
Korea’s LED Industry Developments
Korea’s LED industry took off at a much later date than Japan or Taiwan, in fact it developed at around the same time as China, but has advanced at an accelerated rate. However, the country’s LED industry plummeted much sharply compared to Japan, [...]
2016-09-18meta-author
The carrier concentration and thickness of n-type GaAs epitaxial layers were obtained by cell voltage measurements in anodization, and the results are compared with those obtained by differential C-V measurements. The carrier concentrations in the epi-layer are within the order of those obtained by [...]
2019-06-13meta-author
PAM XIAMEN offers BATIO3 BTO BARIUM TITANATE CRYSTAL SUBSTRATES.
Physical Parameters
Crystal structure
Tetragonal, tP5, P4mm, No. 99
Growth method
Top seeded solution method
Unit cell constant
a=3.995 Å
Melt point (℃)
1,625 °C (2,957 °F; 1,898 K)
Density (g/cm3)
6.02
Hardness (mohs)
6-6.5
Thermal expansion(/℃)
9.4×10-6
Dielectric constants
ea = 3700, ec = 135 (unclamped)
ea = 2400, e c = 60 (clamped)
Chemical stability
Insoluble in water
Transmission wavelength
0.45 ~ 6.30 mm
Size
10×3m, 10×5m, 10×10mm, 15×15mm, [...]
2019-03-11meta-author
PAM-XIAMEN offers GaN on GaN wafer, which uses the homogeneous substrate. The main application market of GaN-on-GaN epi wafer is blue/green lasers, which are used in laser display, laser storage, laser lighting and other fields.
1. GaN on GaN Epitaxy Structure
Item 1:
Epitaxial Layer
Thickness
GaN Cap
3nm
AlxGaN
20nm
AIN
1nm
GaN
0.5um
Buffer layer
3um
GaN substrate
Item 2: 2” and 4” GaN Sub [...]
2019-05-17meta-author