Sammensat halvleder

Pam-Xiamen tilbyder sammensatte halvledermateriale inklusive SIC Wafer og III-V-gruppe Wafer: Insb Wafer, Inp Wafer, Inas Wafer, Gasb Wafer, Gap Wafer, Gan Wafer, Aln Wafer og Gaas Wafer.
III-V compounds material include BN, BP, BAs, BSb, AlN, AlP, AlAs, AlSb, GaN, GaP, GaAs, GaSb, InAs, InN, InP and InSb. Among them, BN, AlN, GaN and InN are Wurtzite structures, and the other 12 are zinc blende structures. Because pentavalent atoms have higher electronegativity than trivalent atoms, there are a few ionic bond components. Because of this, when the III-V materials are placed in the electric field, the lattice is easy to be polarized, and the ion displacement is helpful to increase the dielectric coefficient, if the electric field frequency is in the infrared range. Among the n-type semiconductors of GaAs materials, the electron mobility (mn-8500) is much higher than that of Si (mn-1450), so the movement speed is fast, and its application in high-speed digital integrated circuits is superior to that of Si semiconductors.