Epi Wafer til Laser Diode

Epi Wafer til Laser Diode

GaAs based LD epitaxy wafer, which can generate stimulate emission, is widely used for fabricating laser diode since the superior GaAs epitaxial wafer properties make the device a low energy consumption, high efficiency, long lifetime and etc. In addition to gallium arsenide LD epi wafer, commonly used semiconductor materials are cadmium sulfide (CdS), indium phosphide (InP), and zinc sulfide (ZnS).

  • Beskrivelse

Beskrivelse

Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN), a LD epitaxial wafer supplier, focuses on the GaAs and InP based laser diode epi wafers grown by MOCVD reactors for fiber-optic communication, industrial application, and special-purpose usage. PAM-XIAMEN can offer LD epitaxy wafer based on GaAs substrate for various fields, like VCSEL, infrared, photo-detector and etc. More details about the LD epitaxy wafer material, please refer to the table below:

substrat Materiale materiale Capability Bølgelængde Ansøgning
GaAs GaAs / GalnP / AlGaInP / GaInP 635 nm  
GaAs Based Epi-wafer 650nm Vertical Cavity Surface Emitting Laser (VCSEL)
RCLED
GaAs / GalnP / AlGaInP / GaInP 660 nm  
GaAs / AlGaAs / GalnP / AlGaAs / GaAs 703nm  
GaAs / GalnP / AlGaInP / GaInP 780nm  
GaAs / GalnP / AlGaInP / GaInP 785nm  
GaAs Based Epi-wafer 800-1064nm Infrarød LD
GaAs / GalnP / AlGaInP / GaInP 808nm Infrarød LD
GaAs Based Epi-wafer 850nm Vertical Cavity Surface Emitting Laser (VCSEL)
RCLED
GaAs Based Epi-wafer <870nm Fotodetektor
GaAs Based Epi-wafer 850-1100nm Vertical Cavity Surface Emitting Laser (VCSEL)
RCLED
GaAs / AlGaAs / GaInAs / AlGaAs / GaAs 905nm  
GaAs / AlGaAs / InGaAs / AlGaAs / GaAs 950nm  
GaAs Based Epi-wafer 980nm Infrarød LD
InP Based Epi-wafer 1250-1600nm Lavine foto-detektor
GaAs Based Epi-wafer 1250-1600nm/>2.0um
(InGaAs absorptive layer)
Fotodetektor
GaAs Based Epi-wafer 1250-1600nm/<1.4μm
(InGaAsP absorptive layer)
Fotodetektor
InP Based Epi-wafer 1270-1630nm DFB-laser
Gaasp / GaAs / GaAs substrat 1300 nm  
InP Based Epi-wafer 1310nm FP-laser
Gaasp / GaAs / GaAs substrat 1550nm FP-laser
  1654nm  
InP Based Epi-wafer 1900nm FP-laser
  2004nm  

 

About LD Epitaxy Wafer Applications & Market

The applications of GaAs based LD epitaxy wafer in the laser field can be divided into VCSELs and non-VCSELs. The current GaAs based LD epitaxy applications mainly lies in VCSELs. VCSEL (Vertical Cavity Surface Emitting Laser), based on GaAs materials, is mainly used for face recognition. It is expected to have a high growth rate in the future. EEL (Edge Emitting Laser) is a non-VCSEL device, mainly used in the field of automotive lidar, and the demand is expected to increase with the expansion of the driverless car market.

The GaAs substrate used in the laser field requires high technical indicators, and the unit epitaxial wafer price is significantly higher than that of other fields. The future LD epitaxial market space can be expected. Laser applications are the most sensitive to dislocation density. There is a high requirement for the GaAs substrate materials in laser applications. Therefore, the higher requirement is put forward on LD epitaxial wafer manufacturers and LD epitaxial wafer process. At present, the near-infrared band (760~1060 nm) semiconductor laser based on GaAs substrate has the most mature development and the most widespread application, and it has already been commercialized.

Please see below detail specification of LD epitaxy wafer:

VCSEL Laser Wafer Chip

VCSEL Laser Epi Wafer

703nm laser diode epi wafer

808nm laser diode epi wafer-1

780nm laser diode epi wafer

650nm laser diode epi wafer

785nm laser diode epi wafer

808nm laser diode epi wafers-2

850 nm laserdiode epi wafer

905nm laser diode epi wafer

950nm laser diode epi wafer

1550nm laserdiode epi wafer

1654nm laserdiode epi wafer

2004nm laserdiode epi wafer

 

Enkelt emitterchippene

Single-emitter LD Chip 755nm @ 8W

Single-emitter LD Chip 808nm @ 8W

Single-emitter LD Chip 808nm @ 10W

Single-emitter LD Chip 830 nm @ 2W

Single-emitter LD Chip 880 nm @ 8W

Single-emitter LD Chip 900 + nm @ 10W

Single-emitter LD Chip 900 + nm @ 15W

Single-emitter LD Chip 905nm @ 25W

Single-emitter LD Chip 1470nm @ 3W

PAM XIAMEN offers 1470 / 1550nm high power laser single chip as follows:

LD Bare Bar

LD Bare Bar for 780nm @ hulrum 2.5mm

LD Bare Bar for 808nm @ hulrum 2mm

LD Bare Bar for 808nm @ hulrum 1.5mm

LD Bare Bar for 880 nm @ hulrum 2mm

LD Bare Bar for 940nm @ hulrum 2mm

LD Bare Bar for 940nm @ hulrum 3mm

LD Bare Bar for 940nm @ hulrum 4mm

LD Bare Bar for 940nm @ hulrum 2mm

LD Bare Bar for 976nm @ hulrum 4mm

LD Bare Bar for 1470nm @ hulrum 2mm

LD Bare Bar for 1550nm @ hulrum 2mm