GaAs (galliumarsenid) Wafers

GaAs (galliumarsenid) Wafers

As a leading GaAs substrate supplier, PAM-XIAMEN manufactures Epi-ready GaAs(Gallium Arsenide) Wafer Substrate including semi-conducting n type, semi-conductor undoped and p type with prime grade and dummy grade. The GaAs substrate resistivity depends on dopants, Si doped or Zn doped is (0.001~0.009) ohm.cm, undoped one is >=1E7 ohm.cm. The GaAs wafer crystal orientation should be (100) and (111). For (100) orientation, it can be 2°/6°/15° off. The EPD of GaAs wafer normally is <5000/cm2 for LED or <500/cm2 for LD or microelectronics.

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Beskrivelse

(galliumarsenid) GaAs Wafer

PAM-XIAMEN develops and manufactures compound semiconductor substrates-gallium arsenide crystal and wafer. We has used advanced crystal growth technology, vertical gradient freeze(VGF) and GaAs wafer manufacturing process, established a production line from crystal growth, cutting, grinding to polishing processing and built a 100-class clean room for GaAs wafer cleaning and packaging. Our GaAs wafers include 2~6 inch ingot/wafers for LED, LD and Microelectronics applications. We are always dedicated to improve the quality of currently GaAs wafer substrates and develop large size substrates. The GaAs wafer size offered is in 2”, 3”, 4” and 6”, and the thickness should be 220-700um. Moreover, the GaAs wafer price from us is competitive.

1. GaAs Wafer Specifications

1.1 (GaAs)galliumarsenidVafler til LED-applikationer

Vare Specifikationer Bemærkninger
varmeledning type SC / n-type SC / p-typen med Zn dope Tilgængelig
vækst Metode VGF  
dopingmiddel Silicon Zn tilgængelig
wafer i diameter 2, 3 & 4 inch Barre eller som-cut availalbe
Crystal Orientering (100) 2 °/ 6 ° / 15 ° off (110) Andre misorientation tilgængelig
AF EJ eller USA  
Carrier Koncentration (0,4 ~ 2,5) E18 / cm3  
Resistivity ved RT (1,5 ~ 9) E-3 Ohm.cm  
Mobilitet 1500 ~ 3000cm2 / V-sek  
Etch Pit Density <5000 / cm2  
Laser Mærkning efter anmodning  
Surface Finish P / E eller P / P  
Tykkelse 220 ~ 450um  
epitaksi Ready Ja  
Pakke Enkelt wafer beholder eller kassette

 

1.2 (GaAs)galliumarsenidVafler til LD Applications

Vare Specifikationer Bemærkninger
varmeledning type SC / n-type  
vækst Metode VGF  
dopingmiddel Silicon  
wafer i diameter 2, 3 & 4 inch Barre eller som-cut rådighed
Crystal Orientering (100) 2 °/ 6 ° / 15 ° off (110) Andre misorientation tilgængelig
AF EJ eller USA  
Carrier Koncentration (0,4 ~ 2,5) E18 / cm3  
Resistivity ved RT (1,5 ~ 9) E-3 Ohm.cm  
Mobilitet 1500 ~ 3000 cm2 / V-sek  
Etch Pit Density <500 / cm2  
Laser Mærkning efter anmodning  
Surface Finish P / E eller P / P  
Tykkelse 220 ~ 350um  
epitaksi Ready Ja  
Pakke Enkelt wafer beholder eller kassette

 

1.3 (GaAs)galliumarsenidWafers, Semi-isolerende for Microelectronics Applications

Vare Specifikationer Bemærkninger
varmeledning type isolerende  
vækst Metode VGF  
dopingmiddel udoterede  
wafer i diameter 2, 3 & 4 inch  Ingot available
Crystal Orientering (100)+/- 0.5°  
AF EJ, USA eller hak  
Carrier Koncentration n / a  
Resistivity ved RT > 1E7 Ohm.cm  
Mobilitet > 5000 cm2 / V-sek  
Etch Pit Density <8000 / cm2  
Laser Mærkning efter anmodning  
Surface Finish P / P  
Tykkelse 350 ~ 675um  
epitaksi Ready Ja  
Pakke Enkelt wafer beholder eller kassette

 

1.4 6″ (150mm)(GaAs)galliumarsenidWafers, Semi-isolerende for Microelectronics Applications

Vare Specifikationer Bemærkninger
varmeledning type Semi-isolerende  –
Grow Metode VGF  –
dopingmiddel udoterede  –
Type N  –
Elektrodens diameter (mm) 150 ± 0,25  –
Orientering (100)0°±3.0°  –
HAK Orientering 〔010〕±2°  –
NOTCH deepth (mm) (1-1.25)mm   89°-95°  –
Carrier Koncentration please consult our sales team  –
Resistivity (ohm.cm) >1.0×107 or 0.8-9 x10-3  –
Mobilitet (cm2 / vs) please consult our sales team  –
forvridning please consult our sales team  –
Tykkelse (um) 675 ± 25  –
Edge Udelukkelse for Bow og Warp (mm) please consult our sales team  –
Bow (um) please consult our sales team  –
Warp (um) ≤20.0  –
TTV (um) ≤10.0  –
TIR (um) ≤10.0  –
LFPD (um) please consult our sales team  –
Polering P / P Epi-Ready  –

 

1.5 2″(50.8mm) LT-GaAs (Lav temperatur-Grown Galium arsenid) Wafer Specifikationer

Vare Specifikationer
varmeledning type Semi-isolerende
Grow Metode VGF
dopingmiddel udoterede
Type N
Elektrodens diameter (mm) 150 ± 0,25
Orientering (100)0°±3.0°
HAK Orientering 〔010〕±2°
NOTCH deepth (mm) (1-1.25)mm   89°-95°
Carrier Koncentration please consult our sales team
Resistivity (ohm.cm) >1.0×107 or 0.8-9 x10-3
Mobilitet (cm2 / vs) please consult our sales team
forvridning please consult our sales team
Tykkelse (um) 675 ± 25
Edge Udelukkelse for Bow og Warp (mm) please consult our sales team
Bow (um) please consult our sales team
Warp (um) ≤20.0
TTV (um) ≤10.0
TIR (um) ≤10.0
LFPD (um) please consult our sales team
Polering P / P Epi-Ready
 
* Vi også kan tilvejebringe poly krystal GaAs bar, 99,9999% (6N).

 

2. GaAs Wafer Market & Application

Gallium arsenide is an important semiconductor material. It belongs to group III-V compound semiconductors and the zinc blende crystal lattice structure, with a lattice constant of 5.65×10-10m, a melting point of 1237°C, and a band gap of 1.4 electron volts. Gallium arsenide can be made into semi-insulating high-resistance materials, which can be used to make integrated circuit substrates, infrared detectors, gamma photon detectors, etc. Because its electron mobility is 5 to 6 times greater than silicon, SI GaAs substrate has been importantly used in the fabrication of microwave devices and high-speed digital circuits. Semiconductor devices fabricated on gallium arsenide have the advantages of high frequency, high temperature, low temperature performance, low noise, and strong radiation resistance, which make the GaAs substrate market enlarge.

 

3. Test certificate of GaAs wafer can include below analysis if necessary:

1/Surface roughness of Gallium Arsenide including front side and backside(nanometers).

2/Doping concentration of Gallium Arsenide(cm-3)

3/EPD of Gallium Arsenide(cm-2)

4/Mobility of Gallium Arsendie(V.sec)

5/X-ray diffraction analysis (rocking curves) of Gallium Arsenide: Diffraction reflection curve half-width

6/Low-temperature photoluminescence (emission spectra in the range 0.7-1.0 μm) of Gallium Arsenide: The fraction of exciton photoluminescence in the emission spectrum of the near-IR range at a temperature of 4K or 5 K and an optical excitation density of 1 W / cm2

7/Transmission rate or Absorption coefficient: for instant, we can measure absorption coefficient of single crystal undoped GaAs at 1064nm: <0.6423 cm-1, and this corresponds to a transmission minimum of 33.2% for an exactly 6.5mm thick blank at 1064nm.

 

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