GaN HEMT Epitaksial Wafer

Beskrivelse

GaN HEMT epitaxial wafer is a multilayer film grown epitaxially on a substrate, which usually includes a nucleation layer, a transition layer, a buffer layer, a channel layer, a barrier layer, a cap layer, and a passivation layer from bottom to top. The nucleation layer, like AlGaN or AlN, is used to prevent the substrate material from diffusing into the GaN epitaxial layer. The transition layer may contain hierarchical AlGaN, AlN/GaN superlattice or multilayer AlN to balance the stress between the GaN and the substrate. The higher the Al content in the barrier layer of AlGaN, the higher the 2DEG concentration at the heterojunction. Meanwhile, the lower the threshold voltage of the device, and the higher the current capacity. As the Al ratio increasing, the degree of heterogeneous crystal lattice mismatch will be higher, resulting in a decrease in gallium nitride HEMT electron mobility and a decrease in current capacity.

The High Electron Mobility Transistor (HEMT) is developed based on GaN with unique heterostructure and two-dimensional electron gas. The GaN HEMT advantages include high breakdown strength, low on-resistance and faster The switching speed, which is very suitable for medium and low voltage and medium and small power systems, such as travel adapters, wireless chargers, AC-DC converters, smart home appliances, etc. The epitaxial wafer with HEMT structure is more attractive currently for high-frequency converters, in which GaN HEMT breakdown voltage is 600~650 V. With the rapid development of gallium nitride HEMT epi technology, the price of GaN HEMT devices will be competitive, which can gain large GaN HEMT market for GaN HEMT manufacturers. Moreover, due to the gallium nitride HEMT reliability, it can be widely used in industrial fields, such as photovoltaic inverters, energy storage systems, and electric vehicles.

1. GaN HEMT Material: Available size:2”,4”,6”,8”:

More specific parameters of gallium nitride HEMT wafer for D-mode GaN HEMTs, E-mode GaN HEMTs, GaN HEMT power amplifier and RF, please refer to:

GaN på Si for Power, D-mode

GaN på Si for Power, E-mode

GaN på Si for RF

GaN på Sapphire for Power

GaN på Sapphire til RF

GaN på SiC for RF

GaN på GaN

We are expert in HEMT structure, we also offer GaN HEMT epi wafer for many years.
For silicon substrate, we need to know if you grow GaN HEMT on silicon for POWER or RF, it is different. If needed, please contact [email protected] for details.
For SiC, you should use semi-insulating.
Or you can buy AlGaN/GaN HEMT structure on these three structure from us.

2. Now we show you an example as follows:

2.1  2 ″ (50,8 mm) GaN HEMT Epitaxial Wafers

We offer 2″(50.8mm) gallium nitride HEMT Wafers, the GaN HEMT structure is as follows:

Struktur (fra top til bund):

* udodet GaN-dæksel (2 ~ 3nm)

AlxGa1-xN (18 ~ 40 nm)

AlN (pufferlag)

ikke-doteret GaN (2 ~ 3um)

Safirunderlag

* Vi kan bruge Si3N til at erstatte GaN på toppen, vedhæftningen er stærk, den er belagt med sputter eller PECVD.

2.2 AlGaN/GaN HEMT Epi Wafer on sapphire/GaN

2.3  2″(50.8mm),4″ (100mm)AlGaN/GaN HEMT Epi Wafer on Si

2.3.1 Specifications for Aluminium Gallium Nitride (AlGaN) / Gallium Nitride (GAN) HEMT (High Electron Mobility Transistor) på siliciumunderlag.

2.3.2 Epi structure: Crack-free Epilayers

2.3.3 Electrical Properties of the AlGaN/GaN HEMT structure

2DEG-mobilitet (ved 300 K): ≥1 800 cm2 / Vs

2DEG arkbærertæthed (ved 300 K): ≥0,9 × 1013 cm-2

RMS Roughness (AFM): ≤ 0,5 nm (5,0 um × 5,0 um scanningsområde)

2.4  2″(50.8mm)AlGaN/GaN on sapphire

For specifikation af AlGaN / GaN på safirskabelon, bedes du kontakte vores salgsafdeling: [email protected]

GaN HEMT Applications: Used in blue laser diodes, ultraviolet LEDs (down to 250 nm), and AlGaN/GaN HEMTs device.

3. Explanation of AlGaN/Al/GaN HEMTs:

Nitride HEMT'er udvikles intensivt til højeffektelektronik i højfrekvensforstærkning og strømafbrydelsesapplikationer. Ofte tabes høj ydeevne i DC-drift, når HEMT skiftes - for eksempel kollapser strømmen, når gatesignalet pulses. Det menes, at sådanne effekter er relateret til ladningsfangning, der maskerer portens virkning på strømmen. Feltplader på kilde- og portelektroderne er blevet brugt til at manipulere det elektriske felt i enheden, hvilket mindsker sådanne fænomener med strøm-sammenbrud.

4. GaN EpitaxialTechnology — Customized GaN epitaxy on SiC,Si and Sapphire substrate for HEMTs, LEDs:

GAN HEMT epitaxiale wafers (GAN EPI-wafers)

PAM XIAMEN Offers Epitaxial growth of AlGaN/GaN based HEMT on Si wafers

5. GaN Device:

GaN SBD

GaN HEMT

6. Test Characterization Equipment:

Modstand uden kontakt

Kortlægning af laser tynd filmtykkelse

Bias i høj temperatur / høj luftfugtighed

Termisk stød

DIC Nomarski mikroskop

Atomic Force Microscope (AFM)

Surface Defectivity Scan

Bias i høj temp

4PP Sheets Resistance

Kontaktløs hallmobilitet

Temperaturcyklus

Røntgendiffraktion (XRD) / Reflektans (XRR)

Ellipsometer tykkelse

profilometer

CV-tester

7. Foundry Fabrication:

we also offer foundry GaN HEMT fabrication in the following process as follows:

MOCVD Epitaxy

Metal sputtering / E-Beam

Tørt / vådt metal / dielektrisk ætsning

Tynd film PECVD / LPCVD / Sputtering

RTA / Furnace Annealing

Fotolitografi (0,35um min. CD)

Ionimplantation

More fabrication services, please visit: GaN Fabrication Services til HEMT-enheder

GaN / SiC HEMT epi-wafers

Aluminium gallium arsenide epi wafer

650V GaN FETs Chip for Fast Charge

GaN MOSFET Structure:

GaN MOSFET Structure on SiC Substrate

More about GaN HEMT structures, please read:

What Affects 2DEG of AlGaN/GaN HEMT Wafer?