Ge single crystal(Prime grade)-6

PAM XIAMEN offers 2″ Diameter Wafer-2″ Wafers <211>.

2″ Diameter Wafer

2″ Wafers <211>

Ge Wafer (211) Undoped, 2″ dia x 0.45 mm, 1SP, resistivities: >45 ohm-cm
Ge Wafer (211) Undoped, 2″ dia x 0.45 mm, 2SP, Resistivities: > 45 ohm-cm

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

You can get our free technology service from enquiry to after service based on our 25+ experiences in semiconductor line.

2019-04-25

SiC Crystal and Industry Standards for Silicon Carbide Single Crystal

PAM-XIAMEN has 4H SiC crystal for sale, which is for power electronic device and microwave power device. It has been found that there are over 250 polytypes of silicon carbide single crystal, but the most common polytypes are cubic close-packed 3C-SiC and hexagonal close-packed [...]

2021-07-05meta-author

Performance of colloidal silica and ceria based slurries on CMP of Si-face 6H-SiC substrates

Highlights •The performance of colloidal silica and ceria based slurries on CMP of 6H-SiC substrates were evaluated. •There was a significant difference in the CMP performance of 6H-SiC between silica and ceria based slurries. •For the ceria based slurries, a higher MRR was obtained, especially in strong [...]

2015-12-03meta-author Silica, Silicon carbide (SiC)

Silicon Ingots-5

PAM XIAMEN offers Silicon Ingots. Material Description FZ SCRAP material n-type, Ro: 1,000-10,000 Ohmcm FZ SCRAP material n-type, Ro: 1-1,000 Ohmcm FZ SCRAP material Intrinsic, Ro: >10,000 Ohmcm 6″Ø ingot p-type Si:B[100], Ro: 1-10 Ohmcm, (1 ingot: 21mm) 6″Ø ingot p-type Si:B[100] ±2.0°, Ro: 0.001-0.005 Ohmcm, Ground, (1 ingot: 188mm) 6″Ø ingot p-type Si:B[100], [...]

2019-03-08meta-author

Ceramic Substrate-3

PAM XIAMEN offers Mica disk. Pure Mica Sheet Highest Grade Mica Disks, 9.9mm diameter 10/pkg Highest Grade Mica Disks, 20mm diameter 10/pkg Highest Grade Mica Sheets, 15mm x 15mm (0.59” x 0.59″), 0.15 to 0.177mm (0.006-0.007″) thick, 10/pkg Hi-Grade Mica Sheets, 15mm x 15mm [...]

2019-04-18meta-author

Characterization of LT GaAs carrier lifetime in multilayer GaAs epitaxial wafers by the transient reflectivity technique

Characterization of LT GaAs carrier lifetime in multilayer GaAs epitaxial wafers by the transient reflectivity technique A methodology for determining the carrier lifetime of LT GaAs buffer layers in GaAs multilayer wafers utilizing the femtosecond transient reflectivity technique is introduced. Experimental results and computer simulations performed as a function of [...]

2014-03-14meta-author LT-GaAs

6″ Prime Silicon Wafer Thickness 700±25μm

PAM XIAMEN offers 6″ Prime Silicon Wafer Thickness 700±25μm. Thickness 700±25μm Si, 150mm dia. SSP N type Phos or antimony resistivity 0.01-0.2 ohm-cm with 200A thermal OX and 1200A LPCVD nitride – stoichiometric For more information, please visit our website: https://www.powerwaywafer.com, send us email [...]

2019-07-01meta-author

Read More

Float-Zone Mono-Crystalline Silicon

PAM-XIAMEN can offer float zone silicon wafer, which is obtained by Float Zone method. Monocrystalline silicon rods is got through float zone growth, and then process the monocrystalline silicon rods into silicon wafers, called float zone silicon wafers. Since the zone-melted silicon wafer is not in contact with the quartz crucible during the floating zone silicon process, the silicon material is in a suspended state. Thereby, it is less polluted during the process of floating zone melting of silicon. The carbon content and oxygen content are lower, the impurities are less, and the resistivity is higher. It is suitable for the manufacture of power devices and certain high-voltage electronic devices.
Read More

Test Wafer Monitor Wafer Dummy Wafer

As a dummy wafer manufacturer, PAM-XIAMEN offers silicone dummy wafer / test wafer / monitor wafer, which is used in a production device to improve safety in the beginning of production process and are used for delivery check and evaluation of process form. As dummy silicon wafers are often used for experiment and test, size and thickness thereof are important factors in most occasions. 100mm, 150mm, 200mm, or 300mm dummy wafer is available.
Read More

Nanofabrication Photoresist

PAM-XIAMEN Offers photoresist plate with photoresist
Read More

Photo Mask

PAM-XIAMEN Offers Photomasks

A photo mask is a thin coating of masking material supported by a thicker substrate, and the masking material absorbs light to varying degrees and can be patterned with a custom design. The pattern is used to modulate light and transfer the pattern through the process of photolithography which is the fundamental process used to build almost all of today’s digital devices.
Read More

CdZnTe (CZT) Wafer

Cadmium Zinc Telluride (CdZnTe or CZT) is a new semiconductor, which enables to convert radiation to electron effectively, it is mainly used in infrared thin-film epitaxy substrate, X-ray detectors and Gamma-ray CdZnTe detectors.
Read More

Ge(Germanium) Single Crystals and Wafers

PAM-XIAMEN offers 2”, 3”, 4” and 6” germanium wafer, which is short for Ge wafer grown by VGF / LEC. Lightly doped P and N type Germanium wafer can be also used for Hall effect experiment. At room temperature, crystalline germanium is brittle and has little plasticity. Germanium has semiconductor properties. High-purity germanium is doped with trivalent elements (such as indium, gallium, boron) to obtain P-type germanium semiconductors; and pentavalent elements (such as antimony, arsenic, and phosphorus) are doped to obtain N-type germanium semiconductors. Germanium has good semiconductor properties, such as high electron mobility and high hole mobility.

sales@powerwaywafer.com tech@powerwaywafer.com

Read More

Float-Zone Mono-Crystalline Silicon

PAM-XIAMEN can offer float zone silicon wafer, which is obtained by Float Zone method. Monocrystalline silicon rods is got through float zone growth, and then process the monocrystalline silicon rods into silicon wafers, called float zone silicon wafers. Since the zone-melted silicon wafer is not in contact with the quartz crucible during the floating zone silicon process, the silicon material is in a suspended state. Thereby, it is less polluted during the process of floating zone melting of silicon. The carbon content and oxygen content are lower, the impurities are less, and the resistivity is higher. It is suitable for the manufacture of power devices and certain high-voltage electronic devices.
Read More

Test Wafer Monitor Wafer Dummy Wafer

As a dummy wafer manufacturer, PAM-XIAMEN offers silicone dummy wafer / test wafer / monitor wafer, which is used in a production device to improve safety in the beginning of production process and are used for delivery check and evaluation of process form. As dummy silicon wafers are often used for experiment and test, size and thickness thereof are important factors in most occasions. 100mm, 150mm, 200mm, or 300mm dummy wafer is available.
Read More

Nanofabrication Photoresist

PAM-XIAMEN Offers photoresist plate with photoresist
Read More

Photo Mask

PAM-XIAMEN Offers Photomasks

A photo mask is a thin coating of masking material supported by a thicker substrate, and the masking material absorbs light to varying degrees and can be patterned with a custom design. The pattern is used to modulate light and transfer the pattern through the process of photolithography which is the fundamental process used to build almost all of today’s digital devices.
Read More

CdZnTe (CZT) Wafer

Cadmium Zinc Telluride (CdZnTe or CZT) is a new semiconductor, which enables to convert radiation to electron effectively, it is mainly used in infrared thin-film epitaxy substrate, X-ray detectors and Gamma-ray CdZnTe detectors.
Read More

Ge(Germanium) Single Crystals and Wafers

PAM-XIAMEN offers 2”, 3”, 4” and 6” germanium wafer, which is short for Ge wafer grown by VGF / LEC. Lightly doped P and N type Germanium wafer can be also used for Hall effect experiment. At room temperature, crystalline germanium is brittle and has little plasticity. Germanium has semiconductor properties. High-purity germanium is doped with trivalent elements (such as indium, gallium, boron) to obtain P-type germanium semiconductors; and pentavalent elements (such as antimony, arsenic, and phosphorus) are doped to obtain N-type germanium semiconductors. Germanium has good semiconductor properties, such as high electron mobility and high hole mobility.

Privacy Overview

This website uses cookies to improve your experience while you navigate through the website. Out of these, the cookies that are categorized as necessary are stored on your browser as they are essential for the working of basic functionalities of the website. We also use third-party cookies that help us analyze and understand how you use this website. These cookies will be stored in your browser only with your consent. You also have the option to opt-out of these cookies. But opting out of some of these cookies may affect your browsing experience.

Necessary

Always Enabled

Necessary cookies are absolutely essential for the website to function properly. These cookies ensure basic functionalities and security features of the website, anonymously.

Cookie	Duration	Description
cookielawinfo-checkbox-analytics	11 months	This cookie is set by GDPR Cookie Consent plugin. The cookie is used to store the user consent for the cookies in the category "Analytics".
cookielawinfo-checkbox-functional	11 months	The cookie is set by GDPR cookie consent to record the user consent for the cookies in the category "Functional".
cookielawinfo-checkbox-necessary	11 months	This cookie is set by GDPR Cookie Consent plugin. The cookies is used to store the user consent for the cookies in the category "Necessary".
cookielawinfo-checkbox-others	11 months	This cookie is set by GDPR Cookie Consent plugin. The cookie is used to store the user consent for the cookies in the category "Other.
cookielawinfo-checkbox-performance	11 months	This cookie is set by GDPR Cookie Consent plugin. The cookie is used to store the user consent for the cookies in the category "Performance".
viewed_cookie_policy	11 months	The cookie is set by the GDPR Cookie Consent plugin and is used to store whether or not user has consented to the use of cookies. It does not store any personal data.

Functional

Performance

Analytics

Others

Ge single crystal(Prime grade)-6

Ge single crystal(Prime grade)-6

Share this post

Related Posts

SiC Crystal and Industry Standards for Silicon Carbide Single Crystal

Performance of colloidal silica and ceria based slurries on CMP of Si-face 6H-SiC substrates

Silicon Ingots-5

Ceramic Substrate-3

Characterization of LT GaAs carrier lifetime in multilayer GaAs epitaxial wafers by the transient reflectivity technique

6″ Prime Silicon Wafer Thickness 700±25μm

Float-Zone Mono-Crystalline Silicon

Test Wafer Monitor Wafer Dummy Wafer

Nanofabrication Photoresist

Photo Mask

CdZnTe (CZT) Wafer

Ge(Germanium) Single Crystals and Wafers

Float-Zone Mono-Crystalline Silicon

Test Wafer Monitor Wafer Dummy Wafer

Nanofabrication Photoresist

Photo Mask

CdZnTe (CZT) Wafer

Ge(Germanium) Single Crystals and Wafers