Ge enkelt krystal (Prime klasse) -8

Ge enkelt krystal (Prime klasse) -8

PAM XIAMEN tilbyder 4 "diameter Wafer.

4 "Diameter Wafer

Ge N-type 4” , doteret

Ge Wafer (111) 4 "dia x 0,5 mm, 1SP, N-type (un- doteret)
Ge Wafer (100). Udoterede, 4 "dia x 0,5 mm, 1SP
Ge Wafer (100). Udoterede, 4 "dia x 0,5 mm, 2SP, R> 50 ohm-cm
Ge Wafer (110). Udoterede, 4 "dia x 0,5 mm, 1SP, R:> 50 ohm.cm
Ge Wafer (110). Udoterede, 4 "dia x 0,5 mm, 2SP, R:> 50 ohm.cm
Ge Wafer (111) 4 "dia x 0,5 mm, 2SP, N-type (un- doteret)

Ge P-type 4“ Ga-doteret

Ge Wafer (100) 100 Ø x 0,5 mm, 1SP P typen (Ga doteret) R: 1-5 ohm.cm
Ge Wafer (100). 100mm dia x 0,5 mm, 2SP, P typen (Ga-doteret) R: 0.004-0.01ohm.cm
Ge Wafer (100). 100mm dia x 0,5 mm, 2SP, P typen (Ga-doteret) R: 1,4-1,7 ohm.cm
VGF-Ge Wafer (100) med 6 graders miscut mod <111>, 100 mmdia x 0,5 mm, 1SP, P typen (Ga-doteret) R: 0,296-0,326 Ohm.cm
VGF-Ge Wafer (100) 100mm diameter x 0,5 mm, 2SP, P typen (Ga-doteret) R: 0,128-0,303 Ohm.cm
VGF-Ge Wafer (100). 100mm dia x 0,4 mm, 2SP, P typen (Ga-doteret) R: 0,0038-0,0158 Ohm.cm
VGF-Ge Wafer (100). 100 mmdia x 0,175 mm, 1SP, P typen (Ga-doteret) R: 0,279-0,324 Ohm.cm
VGF-Ge Wafer (100). 100 mmdia x 0,175 mm, 2SP, P typen (Ga-doteret) R: 0,1 til 0,182 ohm.cm
VGF-Ge Wafer (100) 100 mmdia x 0,5 mm, 1SP, P typen (Ga doterede) R: 0,128-0,303 Ohm.cm

Ge, N-type, 4” Sb & Som doteret

Ge Wafer (100) 100mm diameter x 0,5 mm, 2SP, N-type (Sb doteret) R: 2,5-2,7 ohm.cm
Ge Wafer (100) med større flad <110> 100mm dia x 0,5 mm, 1SP, N-type (Sb doteret) R: 0,1-0,5 ohm.cm
Ge Wafer (110) 4 "dia x 0,5 mm, 2SP, N-type (Sb doteret) R: 0.1-0.5ohm.cm
Ge Wafer (110) 4 "dia x 0,5 mm, 2SP, N-type (Sb doteret) R: 1-5 ohm.cm
Ge Wafer (110) 4 "dia x 0,5 mm, 1SP, N-type (Sb doteret) R: 1-5 ohm.cm
VGF-Ge Wafer (100) 100mm diameter x 0,5 mm, 1SP, N-type (As- doteret), R: 0,214-0,250 ohm.cm
VGF-Ge Wafer (100) 100mm diameter x 0,5 mm, 2SP, N-type (As- doteret), R: 0,173 til 0,25 ohm.cm
Ge Wafer (111) 4 "dia x 0,5 mm, 1SP, N-type (SB doteret) med resistiviteter: 0.014-0.022 ohm-cm
Ge Wafer (111) 4 "dia x 0,5 mm, 2SP, N-type (SB doteret) med resistiviteter: 0.014-0.022 ohm-cm
Ge Wafer (100) med flade (100) 4 "dia x 0,5 mm, 1SP, N-type (Sb doterede) Resistiviteter: 0,1-0,5 ohm-cm

For mere information, besøg venligst vores hjemmeside: https://www.powerwaywafer.com,
send os e-mail på sales@powerwaywafer.com og powerwaymaterial@gmail.com

Fundet i 1990, Xiamen Powerway Advanced Materials Co, Ltd (PAM-XIAMEN) er en førende producent af halvledermateriale i Kina.PAM-XIAMEN udvikler avanceret krystalvækst og epitaxy teknologier, fremstillingsprocesser, manipulerede substrater og halvlederkomponenter.PAM-Xiamen teknologier gør det muligt højere ydeevne og lavere omkostninger fremstilling af halvleder-wafer.

PAM-XIAMEN udvikler avancerede krystalvækstinhibitorer og epitaxy teknologier, spænder fra den første generation Germanium wafer, anden generation Galliumarsenid med substrat vækst og epitaksi på III-V silicium doteret n-type halvleder materialer baseret på Ga, Al, In, As og P vokset med MBE eller MOCVD, til den tredje generation: Siliciumcarbid og galliumnitrid til LED og kraftorgan ansøgning.

2019-04-25

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