Monokrystallinsk Germanium (Ge) barre er forsynet med P-type af PAM-XIAMEN. Germanium krystal does not contain large-angle grain boundaries or twin crystals. It has a diamond-shaped crystal structure and is an important semiconductor material. According different applications, single crystal germanium ingot can be divided into solar-grade germanium single crystal, infrared-grade germanium single crystal and detector-grade germanium single crystal. Among them, infrared-grade Ge single crystal is used to prepare basic materials for infrared windows, infrared lenses and other optical components; Ge ingot for semiconductor devices is used to make substrate material for various transistors and solar cells; Detector-grade single crystal Ge is used to prepare high-resolution gamma radiation detector. Take the following specification for example:
1. Specifikation af Single Crystal Germanium Ingot
No.1 Germanium Cubic Crystal
PAM181102-GE
| Vare | Germanium Cubic Crystal |
| Adfærdstype | SCP |
| dopingmiddel | Ge-Ga |
| Længde | 150 mm |
| Diameter | 100,0 ± 0,4 mm |
| Orientering | (100) 6 ° off Mod <111>+5 ° |
| Orienteringsvinkel | 135 ° |
| Primær lejlighed | (100)+2 ° |
| PFlat længde | 32,5+2,5 mm |
| Sekundær Flat | Ingen |
| CC | 1E18 - 2,5 E18 |
| EPD | Ave <500 /cm3 |
| Resistivity | 0,01-0,04 Ohm*cm |
No.2 Germanium Ingot Optical Grade
PAM200408-GE
Germanium ingot D26-0.3mm*L100mm
Germanium ingot D30-0.3mm*L100mm
Type: N-type
Orientation: <111>
Resistivity: 5-40 Ohm*cm
Absorption coefficient: 0.03cm/max @ λ= 10.6um
Refractive index heterogeneity: 5.0*10-9 max @ λ=10.6 um
2. Industristandarder for Germanium Crystal Growth
Den germaniums enkeltkrystaloverflade efter sfæronisering bør være fri for revner, huller, ridser, og den cylindriske overflade bør ikke have rullede steder.
Konduktivitetstypen af got type germanium skal opfylde kravene i tabel 1:
Tabel 1 Ledningsevne Type af monokrystallinsk Germanium Ingot
| Ledningsevne Type | dopingmiddel | Modstand p (23 ℃ ± 0,5 ℃) ohm-cm |
| P-type | ga | 0,001 ~ 45,0 |
| I | 0,001 ~ 45,0 | |
| Au+Ga (ln) | 0,5 ～ 5,0 | |
| N-type | Sb | 0,001 ~ 45,0 |
| udoterede | 35,0 ~ 50,0 |
Den radiale resistivitetsvariation af germanium single crystal boule skal opfylde kravene i tabel 2:
Tabel 2 Radial resistensvariation af Germaniumkrystal
| Diameter (mm) | Radial resistensvariation (absolut værdi) |
| 10≤d≤50 | ≤10% |
| 50≤d≤100 | ≤15% |
| 100≤d≤150 | ≤20% |
| 150≤d≤200 | ≤25% |
| 200≤d≤300 | ≤30% |
| Bemærk: Diameteren refererer til størrelsen på den ujordede germanium -enkeltkrystal. | |
Ge ingots dislokationstæthed til forskellige formål bør opfylde kravene i tabel 3:
Tabel 3 Dislokationstæthed af Germanium
| Ansøgning | Dislokationstæthed Stk/cm2 |
| Halvleder enhed | ≤1000 |
| Laserkomponent | ≤5000 |
| Infrarød optisk komponent | ≤100000 |
Mærke: Kravene til parametre for den producerede rene germaniumkrystal vil være højere end de industrielle standarder.
3. FAQ for Germanium Ingot
Q: What is the difference of germanium ingot between electronic grade and optical grade?
A: Optical grade germanium single crystal generally is lower requirement to electronic grade, they require transmission rate and different polished condition and orientation, but we often use low electronic grade for optical grade.
For mere information, kontakt os venligst e-mail på victorchan@powerwaywafer.com og powerwaymaterial@gmail.com.