Silicon carbide has a chemical formula of SiC and a molecular weight of 40.1. Although the chemical formula is simple, it has a wide range of applications, which is determined by the silicon carbide polytypes.
Structure={components, relationship between components}
Silicon carbide is a simple substance, and the components are carbon [...]
2021-04-26meta-author
PAM XIAMEN offers 3″ Silicon EPI Wafers.
Substrate
EPI
Comment
Size
Type
Res
Ωcm
Surf.
Thick
μm
Type
Res
Ωcm
3″Øx508μm
n- Si:As[111]
0.001-0.005
P/E
90
n- Si:P
41±10%
n/n/n+
3″Øx508μm
n- Si:As[111]
0.001-0.005
P/E
18
n- Si:P
5±10%
n/n/n+
3″Øx508μm
n- Si:As[111]
0.001-0.005
P/E
96
n- Si:P
30±10%
n/n+
3″Øx508μm
n- Si:As[111]
0.001-0.005
P/E
100
n- Si:P
21±10%
n/n+
3″Øx508μm
n- Si:As[111]
0.001-0.005
P/E
100
n- Si:P
16 ±10%
n/n+
3″Øx508μm
n- Si:As[111]
0.001-0.005
P/E
100
n- Si:P
12±10%
n/n+
3″Øx508μm
n- Si:As[111]
0.001-0.005
P/E
100
n- Si:P
20±10%
n/n+
3″Øx508μm
n- Si:As[111]
0.001-0.005
P/E
135
n- Si:P
35±10%
n/n+
3″Øx508μm
n- Si:As[111]
0.001-0.005
P/E
140
n- Si:P
31±10%
n/n+
3″Øx508μm
n- Si:As[111]
0.001-0.005
P/E
145
n- Si:P
38±10%
n/n+
3″Øx508μm
n- Si:As[111]
0.001-0.005
P/E
145
n- Si:P
25±10%
n/n+
3″Øx508μm
n- Si:As[111]
0.001-0.005
P/E
150
n- Si:P
44±10%
n/n+
3″Øx508μm
n- Si:As[111]
0.001-0.005
P/E
158
n- Si:P
67±10%
n/n+
3″Øx381μm
n- Si:Sb[111]
0.005-0.020
P/E
8
n- Si:P
0.63±10%
n/n+
3″Øx381μm
n- Si:Sb[111]
0.005-0.020
P/E
22.5
n- Si:P
0.07±10%
n/n+
3″Øx381μm
n- Si:Sb[111]
0.005-0.020
P/E
30
n- Si:P
6.75±10%
n/n+
3″Øx330μm
n- Si:Sb[111]
0.005-0.018
P/E
75
n- Si:P
40±10%
n/n/n+
3″Øx330μm
n- Si:Sb[111]
0.005-0.018
P/E
25
n- Si:P
2.5±10%
n/n/n+
For [...]
2019-03-08meta-author
PAM XIAMEN offers 450mm Silicon Wafers.
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy [...]
2019-02-20meta-author
PAM-XIAMEN offers GaN on SiC HEMT epitaxial wafer, which is HEMT stacks grown on semi insulation SiC for fabricating microwave RF devices, working on III-N material-growth and devices.
1. GaN on SiC HEMT Wafer for RF Application
No.1 GaN-on-SiC HEMT Epistructure
Wafer size
2”, 3”, 4”, 6”
AlGaN/GaN HEMT structure
Refer 1.2
Carrier density
6E12~2E13 cm2
Hall mobility
1300~2200 [...]
2019-05-17meta-author
PAM XIAMEN offers 3″ Silicon EPI Wafers.
Substrate
EPI
Comment
Size
Type
Res
Ωcm
Surf.
Thick
μm
Type
Res
Ωcm
3″Øx381μm
n- Si:As[111]
0.001-0.005
P/E
28.5
n- Si:P
4±10%
n/n+
3″Øx381μm
n- Si:As[111]
0.001-0.005
P/E
28.5
n- Si:P
20±10%
n/n+
3″Øx381μm
n- Si:As[111]
0.001-0.005
P/E
30
n- Si:P
4.5±10%
n/n+
3″Øx355μm
n- Si:As[111]
0.001-0.005
P/E
34
n- Si:P
9.5±10%
n/n+
3″Øx355μm
n- Si:As[111]
0.001-0.005
P/E
34
n- Si:P
12±10%
n/n+
3″Øx355μm
n- Si:As[111]
0.001-0.005
P/E
34
n- Si:P
11±10%
n/n+
3″Øx355μm
n- Si:As[111]
0.001-0.005
P/E
36
n- Si:P
4±10%
n/n+
3″Øx381μm
n- Si:As[111]
0.001-0.005
P/E
41
n- Si:P
25±10%
n/n+
3″Øx381μm
n- Si:As[111]
0.001-0.005
P/E
42
n- Si:P
20.5±10%
n/n+
3″Øx381μm
n- Si:As[111]
0.001-0.005
P/E
42.5
n- Si:P
17±10%
n/n+
3″Øx355μm
n- Si:As[111]
0.001-0.005
P/E
52.5
n- Si:P
12.5±10%
n/n+
3″Øx381μm
n- Si:As[111]
0.001-0.005
P/E
56
n- Si:P
12±10%
n/n+
3″Øx508μm
n- Si:As[111]
0.001-0.005
P/E
70
n- Si:P
73±10%
n/n+
3″Øx508μm
n- Si:As[111]
0.001-0.005
P/E
72
n- Si:P
12.5±10%
n/n+
3″Øx508μm
n- Si:As[111]
0.001-0.005
P/E
73
n- Si:P
84±10%
n/n+
3″Øx508μm
n- Si:As[111]
0.001-0.005
P/E
75
n- Si:P
13±10%
n/n+
3″Øx508μm
n- Si:As[111]
0.001-0.005
P/E
75
n- Si:P
11±10%
n/n+
3″Øx508μm
n- Si:As[111]
0.001-0.005
P/E
80
n- Si:P
12±10%
n/n+
3″Øx375μm
n- Si:As[111]
0.001-0.005
P/E
85
n- [...]
2019-03-08meta-author
Highlights
•Fabrication scheme for heterogenous Si-to-InP circuits on wafer level is described.
•Wafer-to-wafer alignment accuracy better than 4–8 μm after bonding obtained.
•Interconnects with excellent performance up to 220 GHz demonstrated.
•Palladium barrier necessary when combining Al-based technology with gold based one.
Abstract
In order to benefit from the material [...]