Will cell phone windows come to the rescue?
Will cell phone windows come to the rescue?
PAM XIAMEN offers 4″FZ Prime Silicon Wafer-9 4″ Silicon Wafer Orientation (100) Thickness 525±25μm SSP P type, Boron doped Resistivity>200Ωcm Roughness<8 Angstrom For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
PAM-XIAMEN can offer EFG grown Gallium Oxide (chemical formula: Ga2O3) wafer. Currently, the third-generation semiconductors represented by silicon carbide (SiC) and gallium nitride (GaN) have received widespread attention. High hopes are placed on the application of SiC and GaN in the high power, high temperature, high pressure occasions(like new energy [...]
Highly selective PEC etching of gallium nitride device structures Photoelectrochemical (PEC) wet etching is an attractive wet etch approach for III-Nitride materials. Compared to dry etch techniques normally applied in prevalent GaN device fabrications, PEC wet etching can provide low damage, selective etching and understanding [...]
A new solution technique to grow SiC nanowires/nanorods was developed by simply heating Fe–Si melt on a graphite plate in argon atmosphere to 1600 °C for 3 and 6 h. SiC nanowires/nanorods with diameters of 100 nm and lengths of several tens of micrometres were [...]
Silicon wafer bonding technology refers to the method of tightly combining silicon wafers with silicon wafers, silicon wafers with glass or other materials through chemical and physical interactions. Silicon wafer bonding is often combined with surface silicon processing and bulk silicon processing, and is [...]
PAM XIAMEN offers 4″ FZ Intrinsic Si wafer SEMI-PRIME, FZ, 4″, Intrinsic/Undoped, <1-0-0>, >10,000 ohm-cm, 500±15um, SSP, TTV<5um, Bow<30um, Warp <30um, Flats: 1 Flat. Particle @0.3µm, <20count For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
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