12 "Silicon Wafers 300mm TOX (Si Thermal Oxidation Wafer)

12 ″ Silicon Wafers 300mm TOX (Si Thermal Oxidation Wafer)

PAM-XIAMEN offers 300mm silicon oxide wafer and dioxide wafer. Thermal oxide silicon wafer or silicon dioxide wafer is a bare silicon wafer with oxide layer grown by dry or wet oxidation process. The thermal oxide layer of the silicon wafer is usually grown in a horizontal tube furnace, and the silicon wafer oxide temperature range is generally 900 ℃ ~ 1200 ℃. Compared with CVD oxide layer, silicon wafer oxide layer has higher uniformity, better compactness, higher dielectric strength and better quality.

  • Beskrivelse

Beskrivelse

PAM-XIAMEN offers 300mm silicon oxide wafer and dioxide wafer. Thermal oxide silicon wafer or silicon dioxide wafer is a bare silicon wafer with oxide layer grown by dry or wet oxidation process. The thermal oxide layer of the silicon wafer is usually grown in a horizontal tube furnace, and the silicon wafer oxide temperature range is generally 900 ℃ ~ 1200 ℃. Compared with CVD oxide layer, silicon wafer oxide layer has higher uniformity, better compactness, higher dielectric strength and better quality.

 

1. Parameters of Silicon Oxide Wafer

Parametre Value
Type gryn Dyrket efter Czochralski-metoden
Diametr, mm 300 ± 0,2
Wafers Levetid, måned 12
Konduktivitetstype P
dopingmiddel B (bor)
Oxigen max, OLD-PPMA 40
Carbon, PPMA 1
Udelukkelse af kanzonen, mm 3
Krystallografisk orientering <100>
Afvigelse af overfladorientering fra et givet krystallografisk plan, grader 0,5
Volumenresistivitet, Ohm · cm 10-40
Antallet af forskydninger, cm-2 0
Antallet af punktetsningsfejl, cm-2 0
Antallet af punktoxidative defekter, cm -2 500
Det maksimale jernindhold i volumen, E10AT / CC 10
Primær hak ja
Hæld placering 110
Hakkestørrelse, mm 2,3
Indskæringsform V
Skivetykkelse, mikron 775 ± 25
Type mærkning Laser
Markering af placering bagside
Kantprofil Af SEMI T / 4
Front ridser fraværende
Samlet skifte tykkelse ændring (TTV), mikron 5
Afbøjning, mikron 60
Skiver oxideres til en tykkelse på mikron 0,1-1
Antallet af partikler på en overflade større end 0,09 mikron 50
Forurening af bagsiden fraværende
Overfladeindhold af aluminium, E10AT / CM2 1
Overfladeindhold af calcium, E10AT / CM2 1
Overfladeindhold af krom, E10AT / CM2 1
Overfladens indhold af kobber, E10AT / CM2 1
Overfladeindhold af jern, E10AT / CM2 1
Overfladeindhold af kalium, E10AT / CM2 1
Overfladens indhold af natrium, E10AT / CM2 1
Overfladens indhold af nikkel, E10AT / CM2 1
Overfladens indhold af zink, E10AT / CM2 1
Krav til nøjagtighed af fladhed, mikron 0,3
Udelukkelse af kanzonen ved måling af fladhed, mm 3

 

Krav til pakning:

Parameter  
Type emballage MW300GT-A
Indvendigt containermateriale Polyethylen
Yderpakningsmateriale Aluminium
Antal stykker i en pakke 25
genbrugelighed ja

 

2. Oxidation Methods

Dry oxidation and wet oxidation are the most important methods for growing silicon on oxide wafer.

2.1 Dry oxidation silicon wafer

Dry oxygen oxidation silicon reacts with oxygen at the temperature of 850-1200 ℃, the rate of thermal oxide growth silicon wafers is low but the quality is good, so it can be used for MOS insulated gate growth. Silicon wafer oxide thickness is 10nm~300nm.

2.2 Wet oxygen oxidation wafer 

At high temperature, water vapor is used to enter the furnace tube and form oxide layer on the surface of silicon wafer. The density of wet oxygen oxidation is slightly worse than that of dry oxygen oxidation, but the advantage of wet oxygen oxidation is that it has a higher growth rate, which is suitable for the film growth above 500 nm. Wet oxidation capacity: 100nm~6um.

During the silicon wafer oxidation process, the thermal silicon oxide wafer is an excellent dielectric layer as an insulator. In many silicon-based devices, the thermal oxide layer plays an important role as a doping prevention layer and a surface dielectric.

 

3. FAQ: 

Kan du kontrollere, om du accepterer emballagen MW300GT-A som vedhæftet billede?

— Yes, please go ahead.

emballage MW300GT-A til 300 mm siliciumskiver 300 mm TOX (Si Thermal Oxidation Wafer)

emballage MW300GT-A til 300 mm siliciumskiver 300 mm TOX (Si Thermal Oxidation Wafer)

 

 

 

 

 

 

 

 

emballage MW300GT-A til 300 mm siliciumskiver 300 mm TOX (Si Thermal Oxidation Wafer)

emballage MW300GT-A til 300 mm siliciumskiver 300 mm TOX (Si Thermal Oxidation Wafer)

 

 

 

 

 

 

 

 

PAM-XIAMEN kan tilbyde dig teknologi og wafer support.

For mere information, besøg venligst vores hjemmeside:https://www.powerwaywafer.com/silicon-wafer,

send os e-mail på[email protected]og[email protected]

 

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