PAM XIAMEN offers test grade silicon wafers
Below is just a short list of the test grade silicon substrates that we have in stock!
Inches
Cust class
Dopant
Type
Orientation
PFL length
PFL direction
SFL
Off orientation
Resistivity
Diameter
Thickness
Bow
TTV
Warp
6
DSP
Antimony
N+
100
57,5 ± 2,5
110 ± 0,50
0.0 ± 0.5°
0.01 – 0.02 Ohmcm
150 ± 0.2 mm
300 ± 10 µm
30
10
30
6
DSP
Arsenic
N+
100
57,5 ± 2,5
110 ± 1
0.0 [...]
2019-02-25meta-author
PAM XIAMEN offers Silicon Substrate.
Below are just two items our clients use to work with 2D Materials.
Si
150mm P/B <100> 0-100 ohm-cm 625um SSP Test Grade
Si
100mm N/As <100> 0.001-0.005 ohm-cm 500um SSP Prime Grade
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com [...]
2019-02-26meta-author
PAM XIAMEN offers Photographic Film Letterpress
Accuracy Index
Accuracy/Grade
Accuracy1
Accuracy2
Line Number/Aperture Rate
400dpi/50%
350dpi/50%
Dot arrangement, Dot shape
45°/60°/75°/circle
45°/60°/75°/circle
Dimensional Accuracy
±0.085mm
±0.085mm
Substrate Thickness
1.50mm±0.15mm
1.50mm±0.15mm
Cutting Accuracy
±1mm
±1mm
Main application areas:
LCD-TN/STN/TFT collocated liquid drum glue, namely transfer PI directional liquid to ITO glass. LCD-TN/STN/TFT Photographic Film Letterpress
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at [...]
2019-07-04meta-author
We have investigated the photoluminescence mapping characteristics of semi-insulating (SI) InP wafers obtained by annealing in iron phosphide ambience (FeP2-annealed). Compared with as-grown Fe-doped and undoped SI InP wafers prepared by annealing in pure phosphorus vapour (P-annealed), the FeP2-annealed SI InP wafer has been [...]
2019-11-11meta-author
PAM XIAMEN offers Polyelectrolyte Multilayer Modified Silicon Substrate
A client of our recently requested a substrate that would help them with their research experiement.
“My experiment is to synthesize the novel magnesium biomaterials on the polyelectrolyte multilayer modified silicon wafer. The wafer would be similar with the [...]
2019-02-26meta-author
Heteroepitaxial growth of 3C‐SiC on Si by chemical vapor deposition has been investigated using the precursor trimethylsilane. To optimize the growth process and to obtain high growth rates, we have investigated the effect of temperature and precursor flow rate on on‐axis Si(100) and off‐axis [...]
2020-01-20meta-author