YSZ crystal-3

YSZ crystal-3

PAM XIAMEN offers YSZ crystal.

YSZ crystal is grown by “cold crucible” method. It is very difficult to get a larger size YSZ crystal. PAM XIAMEN supplies YSZ crystal wafer up to 2″ diameter.

YSZ substrates (111)

YSZ (111) 5x5x0.5mm, 1SP”

YSZ (111) 10x10x0.5mm, 1SP

YSZ (111) 10x10x0.5mm, 2SP

YSZ (111) 10x10x1.0mm, 1SP

YSZ (111) 0.5″x0.5″x0.5mm, 1SP

YSZ (111) 8 mm dia x 0.5 mm, 2SP

YSZ (111) 1″x1″x0.5mm, 1SP

YSZ (111) 1″”x1″”x0.5mm, 2SP”

YSZ Single Crystal Wafer (111) 1″ dia x 0.5 mm, 1SP

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

Before 1990, we are stated owned condensed matter physics research center. In 1990, center launched Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN), now it is a leading manufacturer of compound semiconductor material in China.

2019-05-21

Share this post

Related Posts

GaAs (100) crystal-2

PAM XIAMEN offers GaAs (100) Te-doped crystal . GaAs (100), N type Te doped, 10×10 x 0.35 mm, 1SP GaAs (100), N type Te doped, 5 x 5 x 0.35 mm, 1SP GaAs (100) orientation, 2 deg OFF Toward [101] +/- 0.5 deg, Te [...]

2019-04-22meta-author
Diamond Thermal Conductivity

In recent years, gallium nitride (GaN) is widely used in high-frequency, high-power microwave, millimeter wave devices, etc., because it has excellent performance of large band gap, high thermal conductivity, high electron saturation drift speed, and easy formation of heterostructures. At the same time, various fields have [...]

2021-04-29meta-author
8Inch Single Crystal Germanium Material

Single crystal germanium (Ge) material is an important hard and brittle infrared optical material, belonging to indirect transition semiconductor with high hole mobility and electron mobility. It is widely used in aerospace, high-frequency ultra-high frequency electronics, optical fiber communication, infrared optics, solar cells and [...]

2023-02-03meta-author
HPSI SiC Wafer for Graphene Growth

High purity SiC (silicon carbide) substrate, which is for microwave device and graphene epitaxial growth, can be provided by PAM-XIAMEN – a SiC substrate supplier. Among all the usages, epitaxial graphene growth on high-purity semi-insulating silicon carbide substrate is expected to produce high-performance graphene integrated circuits, [...]

2020-08-25meta-author
Surface Roughness-GaN material-TEST REPORT

A test report is necessary to show the compliance between custom description and our final wafers data. We will test the wafer characerization by equipment before shipment, testing surface roughness by atomic force microscope, type by Roman spectra instrument, resistivity by non-contact resistivity testing [...]

2018-08-14meta-author
2″ Silicon Wafer-9

PAM XIAMEN offers 2″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment n-type Si:P [110] 2″ 250 P/E FZ ~50 PF<111> SF 134° n-type Si:P [110] 2″ 900 P/E FZ 50-100 1 F @ <111> only n-type Si:P [110] 2″ 280 P/P FZ 16-30 1 F @ <111> only n-type Si:P [110] 2″ 1000 P/P FZ 15-18 1 F @ <1,-1,0> n-type Si:P [100] 2″ 300 P/P FZ 1,000-1,600 SEMI Prime n-type Si:P [100] 2″ 300 P/P FZ 600-1,200 SEMI Prime, n-type Si:P [100] 2″ 2000 P/E FZ >600 SEMI Prime, , Individual cst n-type Si:P [100] 2″ 200 P/P FZ 500-1,500 SEMI Prime, n-type Si:P [100] 2″ 300 P/E FZ >300 SEMI Prime, n-type Si:P [100] 2″ 500 P/P FZ >200 SEMI Prime, n-type Si:P [100] 2″ 300 P/P FZ 50-110 SEMI Prime, n-type Si:P [100] 2″ 280 P/P FZ 20-70 SEMI Prime, n-type Si:P [100] 2″ 300 P/E FZ 10-40 SEMI Prime n-type [...]

2019-03-07meta-author