PAM XIAMEN offers 3″ Silicon Wafer-18
Si wafer
Orientation: (100) ± 0.5°
Type: n-type
Dopant: P
Diameter: 76.2 ± 0.3 mm
Thickness: 380 ± 25 um
Disorientation: 4° to <110>
Resistivity: < 0.005 Ohm*cm
single side polished
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2020-03-13meta-author
PAM XIAMEN offers 2 inch AlN on sapphire wafer grown by MOCVD, which is the major technology for growing single-crystal aluminum nitride onto large-size, low-cost, and mature sapphire substrate. One important utilization of high-quality AlN-on-sapphire template is the deep ultraviolet (DUV) optoelectronic devices.
1. Specification of [...]
2019-03-11meta-author
PAM XIAMEN offers NdCaAlO4 crystal.
Crystal
Structure /lattice constant
M.P. oC
Density g/cm3
Thermo-Expans
x10-6/K
Dielectric constant
Lattice Mismatch to YBCO
Max. Dia
NdCaAlO4
Tetrag.a=3.685 c=12.12
1850
5.56
12
19.5
0.055
CZ 35mm
NdCaAlO4 (001) 10x10x0.5 mm, 1 side polished
NdCaAlO4 (001) 10x10x0.5 mm, 2 sides polished
NdCaAlO4 (100) 10x10x0.5 mm, 1 side polished
For more information, please visit our [...]
2019-05-13meta-author
PAM XIAMEN offers 905nm laser diode wafers.
1. Specs of 905nm Laser Diode Wafer
1.1 Three Stark 905nm Pulse LD Structures PAM211202-GAINAS
Layer
Composition
Thickness
Concentration
13
P+ GaAs
/
/
12
P-AlGaAs cladding + waveguide
d~1.6um
/
11
Undoped GaInAs QW PL:880~900nm
/
/
10
N- AlGaAs cladding + waveguide
/
9
N++ GaAs/P++ GaAs Tunnel junction
/
/
8
P- AlGaAs cladding + waveguide
/
7
Undoped GaInAs QW PL:880~900nm
/
/
6
N- AlGaAs cladding [...]
2019-03-13meta-author
Analyses of Five Major LED Manufacturers Vertical Integration Strategies (Part 2)
In part one of these series, LEDinside explored Philips, Osram and Cree’s vertical integration strategies. In the second part of this series we will take a closer look at major Chinese LED companies MLS and Elech-Tech [...]
2016-05-10meta-author
PAM XIAMEN offers 3″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
p-type Si:B
[111]
3″
300
P/P
0.3-0.4
SEMI Prime
p-type Si:B
[111]
3″
250
P/E
0.10-0.12
SEMI Prime
p-type Si:B
[111]
3″
300
P/E
0.03-0.04
SEMI Prime
p-type Si:B
[111]
3″
380
P/E
0.014-0.015
SEMI Prime
p-type Si:B
[111-1°]
3″
1000
P/E
0.014-0.016
SEMI Prime
p-type Si:B
[111]
3″
600
P/P
0.005-0.020
SEMI Prime
p-type Si:B
[111-3.5°]
3″
380
P/E
0.004-0.005
SEMI Prime
n-type Si:P
[510]
3″
1000
P/E/P
5-10
Prime, NO Flatst
n-type Si:P
[100]
3″
9500
P/E
15-22
SEMI Prime, Individual cst
n-type Si:P
[100]
3″
300
P/E
10-20
SEMI Prime
n-type Si:P
[100]
3″
380
P/E
10-20
SEMI Prime
n-type Si:P
[100]
3″
3000
P/E/P
10-12
Prime, NO Flats, Individual cst
n-type Si:P
[100]
3″
1000
P/E
6-10
Prime, NO Flatst
n-type Si:P
[100]
3″
1500
P/E
5-7
SEMI Prime
n-type Si:P
[100]
3″
300
P/P
1-20
SEMI Prime
n-type Si:P
[100]
3″
345
P/P
1-100
SEMI
n-type Si:P
[100]
3″
350
P/P
1-25
SEMI Prime, TTV<1μm, Empak cst
n-type [...]
2019-03-06meta-author