PAM-XIAMEN can offer EFG grown Gallium Oxide (chemical formula: Ga2O3) wafer. Currently, the third-generation semiconductors represented by silicon carbide (SiC) and gallium nitride (GaN) have received widespread attention. High hopes are placed on the application of SiC and GaN in the high power, high temperature, high pressure occasions(like new energy [...]
2021-04-19meta-author
We are an expert of semiconductor wafers in semiconductor industry, and we offer technology support and wafers selling for thousands of univerisities and industrial customers by our decades experience, including Cornell University, Stanford Univeristy,Peking University, Shandong Univerity, university of south carolina,Caltech Faraon lab (USA),University of California, Irvine (USA),Singapore MIT Alliance for Research and Technology Centre (SMART),West Virginia University,Purdue Univerity, University of California, Los Angeles,King Abdullah University of Science & Technology,Massachusetts Institute of Technology,University of Houston,University of Wisconsin,University of Science and Technology of China etc.
And now we show one article example as follows, who bought our wafers or service:
Article title:Characterization and comparison of commercially available silicon carbide (SIC) power switches
Published by:
K. Haehre ; M. Meisser ; F. Denk ; [...]
2019-12-09meta-author
Credit: MSU
A university-built small satellite known as the Cosmic X-Ray Background NanoSat-2 (CXBN-2) is being prepared for an ambitious upcoming science mission. The spacecraft – scheduled for launch into space on March 19 – is expected to deliver crucial data that could advance our [...]
2017-08-09meta-author
PAM-02A is an amplifier which used for shaping and amplifying signals comes from scintillation detector, proportional counter and semiconductor detector.
PAM-02A integrates amplifier circuit and SK shaping circuit. With ordered cable, it can direct pulse signal which comes from amplifier into multi-channel pulse analyzer.
1. [...]
2019-04-25meta-author
PAM XIAMEN offers Zirconium Substrate & Foil ( Polycrystalline ).
Zr – Polycrystalline Substrate: 10 x 10 x0.5 mm, One sides polished
Polycrystallline Zr substrate
Purity: 99.5%
Density: 6.52 g/cm3
Melting Point: 1855ºC
Average Grain Size: 10~50 Microns ( No annealling )
Substrate dimension: 10 x 10 x0.5 [...]
2019-05-21meta-author
Annealed silicon wafer can be provided with low defect density from PAM-XIAMEN. The purpose of using annealed wafer is to eliminate defects on the silicon wafer surface and the component manufacturing area of the surface layer, and has a strong ability to capture heavy [...]
2019-02-26meta-author