The International Technology Roadmap for Semiconductors (ITRS) identifies production test data as an essential element in improving design and technology in the manufacturing process feedback loop. One of the observations made from the high-volume production test data is that dies that fail due to [...]
PAM XIAMEN offers 4″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
n-type Si:P
[100]
4″
525
P/P
1-100
SEMI Prime, TTV<5μm
n-type Si:P
[100]
4″
525
P/E
0.3-0.5
SEMI
n-type Si:P
[100]
4″
300
P/E
0.29-0.31
SEMI Prime
n-type Si:P
[100]
4″
200
P/P
0.10-0.15
SEMI Test, Not sealed both sides scratched
n-type Si:P
[100]
4″
200
P/P
0.10-0.15
SEMI Test, Both sides with scratches
n-type Si:P
[100]
4″
200
P/E
0.10-0.15
SEMI Prime, Front-side Prime, Back-side Test grade polish
n-type Si:Sb
[100]
4″
525
P/E
0.020-0.022
Prime
n-type Si:Sb
[100-6° towards[110]] ±0.5°
4″
525
P/E
0.015-0.020
SEMI Prime
n-type Si:Sb
[100]
4″
525
P/E
0.011-0.014
Prime
n-type Si:Sb
[100]
4″
305 ±3
P/P
0.010-0.025
SEMI Prime, TTV<1μm
n-type Si:Sb
[100]
4″
525
P/E
0.01-0.02
SEMI Prime, TTV<5μm
n-type Si:Sb
[100]
4″
525
P/E
0.01-0.02
SEMI Prime
n-type Si:As
[100]
4″
525
P/E
0.0025-0.0035
SEMI Prime
n-type [...]
2019-03-05meta-author
Powerway Wafer offers III-nitride GaN LED Epi wafer on flat or patterned Sapphire as listed below, which emits blue or green lights. The GaN LED market size is 50mm, 100mm, 150mm or 200mm. The GaN LED emission wavelength can reach 530nm.
A high crystal quality GaN can be gained by depositing [...]
2020-03-18meta-author
Analytical model for event reconstruction in coplanar grid CdZnTe detectors
Coplanar-grid (CPG) particle detectors were designed for materials such as CdZnTe (CZT) in which charge carriers of only one sign have acceptable transport properties. The presence of two independent anode signals allows for a reconstruction [...]
PAM XIAMEN offers 2″ Monocrystalline Silicon Wafer with Thermal Oxide 20nm
2inch diameter wafer made of monocrystalline silicon with isolation oxide
Diameter 50.8mm
Polishing: one-sided for microelectronics
Type of conductivity and alloying: not specified
Surface orientation: not specified
Primary and secondary flat orientation: not specified
Thickness: 675 microns±20 microns
Wedge (TTV): less than 15 microns
TTV<15μm
Distortion: less than 35 microns (the value is unchanged)
Thickness of the isolation oxide: at least 20 nm
Front side: polished
Back side: lapped-etched
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2021-03-17meta-author
PAM XIAMEN offers Single-emitter LD Chip 9xxnm @10W.
Brand: PAM-XIAMEN
Wavelength: 9xxnm
Stripe width: 96um
Output Power: 10W
Cavity Length:4.8mm
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd [...]
2019-05-09meta-author