InGaN/GaN/AlGaN-based laser diodes grown on free-standing GaN substrates
The InGaN multi-quantum-well (MQW)-structure laser diode (LD) was grown on an epitaxially laterally overgrown GaN on sapphire. The lowest threshold current densities between 1.2 and 2.8 kA cm−2 were obtained when the number of InGaN well layer was [...]
PAM XIAMEN offers KBr Potassium Bromide Crystal Substrate.
To better serve you, we would like to discuss your specific requirement, Please Contact Us for a quote.
Main parameters
Crystal structure
M3
Growth method
crystallization process
Crystal lattice parameters
a=5.596Å
Density
2.75(g/cm3)
Index of refraction
1.49025
Surface roughness
< 5 [...]
2019-03-12meta-author
Silicon carbide has very stable characteristics, so that it can work stably in some harsh environments. Because of the stable chemical bonds, the technical threshold for silicon carbide production is very high. The growth conditions of silicon carbide crystal ingots are harsh, requiring high temperature (~2600℃) and high [...]
2021-04-23meta-author
PAM XIAMEN offers 4″CZ Prime Silicon Wafer.
4inch Prime CZ-Si wafer 4 inch (+/- 0.5 mm), thickness = 200 ± 25 µm,
orientation (100)(+/-0.5度),
2-side polished,
p or n type (no matter) ,
? Ohm cm (no matter),
Particle: 0.33µm, <qty30
ttv ≤ 10um,warp [...]
2019-07-03meta-author
PAM XIAMEN offers 8″Silicon As-cut Wafer
According to the production process, silicon wafers can be divided into as-cut wafer, lapped wafer, etched wafer and polished wafer.The first process of silicon wafer processing is orientation, roll grinding and square cutting. Silicon single crystal directional cutting can [...]
2020-06-12meta-author
PAM XIAMEN offers YAlO3 Single crystal.
YAlO3 is excellent substrate for HTS film and II-V nitride , as well as many oxide films due to its chemcial stability and lattice matching.
Structure Lattice (A) Melting Point Density g/cc Dielectric Constant Thermo-Expans x10-6/K Max. Xtl [...]
2019-05-21meta-author