PAM-XIAMEN, one of leading silicon wafer producers, can offer 4 inch N type Sb doped Silicon wafer. As an important substrate for epitaxial growth, heavily doped antimony silicon wafers are widely used in integrated circuit manufacturing.
1. Specification of 4 inch Sb Doped Si wafer [...]
2021-06-25meta-author
PAM XIAMEN offers Fe – Stainless Steel Substrate ( Polycrystaline).
Stainless Steel Substrate (SUS301 HV200-HV600 ): 1″ Dia x 0.3 mm, as cold rolling
Stainless Steel Foil: SS316 0.1mm Thick x 300mm W x 4000 mm L
Stainless Steel Foam: SS316 1mm Thick x [...]
2019-05-08meta-author
PAM XIAMEN offers MoSe2 crystal.
MoSe2 is a layered material with strong in-plane bonding and weak out-of-plane interactions. These interactions lead to exfoliation into two-dimensional layers of single unit cell thickness. In addition, MoSe2 have sizable bandgaps that change from indirect to direct in [...]
2019-05-13meta-author
PAM XIAMEN offers test grade silicon wafers
Below is just a short list of the test grade silicon substrates!
Inches
Cust class
Dopant
Type
Orientation
PFL length
PFL direction
SFL
Off orientation
Resistivity
Diameter
Thickness
Bow
TTV
Warp
6
SSP
Boron
P
100
57,5 ± 2,5
110 ± 0,20
0.0 ± 0.2 °
1 – 10 Ohmcm
150.0 ± 0.2 mm
600 ± 5 µm
3
6
SSP
Boron
P
111
0,0 ± 0,0
110 ± 1
0.0 ± 0.2°
25 – [...]
2019-02-25meta-author
Semiconductor lasers in the near-infrared band (760-1060nm) based on GaAs substrates are the most mature and most widely used, and have already been commercialized. We can supply GaAs laser diode wafer for a wavelength of 940nm. Moreover, a variety of laser wafers with different wavelengths [...]
2022-07-28meta-author
The structures of InxGa1-xAsyP1-y (indium gallium arsenide phosphide) quantum well epitaxially grown on InP substrate can be purchased or customized from PAM-XIAMEN. By adjusting the composition of x and y, the coverage wavelength range is from 870nm (GaAs) to 3.5um (InAs), which includes the optical [...]
2021-10-25meta-author