PAM XIAMEN offers 4″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
n-type Si:As
[111-4°] ±0.5°
4″
325
P/E
0.001-0.005
SEMI Prime, Back Surface: Sand blasted with LTO seal
n-type Si:As
[111-4°] ±0.5°
4″
300
P/E
0.001-0.005
SEMI Prime, Back-side Sand-blasted with LTO seal, in Empak cassettes of 7 wafers
n-type Si:As
[111-2°] ±0.5°
4″
400
P/EOx
0.001-0.004 {0.0018-0.0036}
SEMI Prime, Epi edges, 0.5μm LTO
n-type Si:As
[111-4°] ±0.5°
4″
525
P/E
0.001-0.005
SEMI Prime
n-type Si:As
[111-4°]
4″
525
P/E
0.001-0.005
SEMI Prime
n-type Si:As
[111] ±0.5°
4″
1000
P/E
0.001-0.005 {0.0031-0.0040}
SEMI Prime, TTV<4μm, [...]
2019-03-05meta-author
PAM XIAMEN offers 6″ Silicon Wafer-5 as follows, while silicon wafer list includes, but not limited to the following.
150mm wafers
Orientation100,
SSP,
Flat Semi Std
Thickness 530+/-15um
Doping N/A (no requirement)
1um thermal oxide
For more polished wafer specification, please see below link:
https://www.powerwaywafer.com/silicon-wafer
For 6″ Silicon Wafer-5 please see below link:
link 1.6″ [...]
2019-11-26meta-author
PAM XIAMEN offers 4″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
p-type Si:B
[100]
4″
480
C/C
1-30
SEMI Test, UNPOLISHED WAFERS WITH EDGE CHIPS
p-type Si:B
[100]
4″
500
P/P
1-50
SEMI Prime, Carbon content (0.2-0.9)E16/cc per ASTM F1319, Oxygen content (9.4-8.8)E17/cc
p-type Si:B
[100]
4″
500
P/P
1-50
SEMI Prime, Carbon content ~1.0ppma
p-type Si:B
[100]
4″
500
P/P
1-50
SEMI Prime, Carbon content ~0.2ppma
p-type Si:B
[100]
4″
500
P/P
1-50
SEMI Prime, Carbon content (1.3-2.2)E16/cc per ASTM F1319, Oxygen content (7.9-7.7)E17/cc
p-type Si:B
[100]
4″
500
P/P
1-50
SEMI [...]
2019-03-05meta-author
Extended defects and precipitates in LT-GaAs, LT-InAlAs and LT-InP
We review the main structural characteristics of low temperature molecular beam epitaxially produced GaAs (LT-GaAs), LT-InAlAs, and LT-InP. These materials exhibit almost identical behaviours with respect to growth and annealing conditions. For too low growth temperatures [...]
PAM XIAMEN offers 2 inch GaN (Gallium Nitride) HEMT Epitaxial Wafers on different substrates such as silicon substrate, sapphire substrate, silicon carbide (SiC) substrate. This GaN epitaxial wafer is for high-electron-mobility transistors (HEMT).
We sell directly from the factory, and therefore can offer the best prices on the market for high [...]
2019-03-11meta-author
PAM XIAMEN offers 2″ FZ Si wafer with SSP
2″ Undoped Silicon Wafer
Diameter: 50.8mm
Thickness: 300um
Polished : Single Side Polished
Orientation: <100>
Resistivity >10,000Ωcm
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2020-06-15meta-author