PAM-XIAMEN offers PBN-PG composite heater with single side and double side heating patterns.
PG ribbon thickness 0.05mm
Main Heating Zones
Front surface:
Outer element R1=13.4 Ohm (hot, at 1200-1300 deg.C), cold ~ x2 higher
Inner element R2= 8.1 Ohm (hot, at 1200-1300 deg.C), cold ~ x2 higher
Auxiliary Heating Zones
Back surface:
Outer element [...]
2019-03-13meta-author
PAM XIAMEN offers Polyelectrolyte Multilayer Modified Silicon Substrate
A client of our recently requested a substrate that would help them with their research experiement.
“My experiment is to synthesize the novel magnesium biomaterials on the polyelectrolyte multilayer modified silicon wafer. The wafer would be similar with the [...]
2019-02-26meta-author
PAM XIAMEN offers 4″ CZ Prime Silicon Wafer.
4″ epi CZ P-type (100)±0.5°
Thickness 525±15μm
Resistivity 0.015±0.005Ωcm
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a [...]
2019-06-28meta-author
Growth of 3C–SiC films on Si substrates by vapor–liquid–solid tri-phase epitaxy
Cubic SiC films (3C–SiC) were deposited on (111) Si substrates by a vapor–liquid–solid tri-phase growth method. In such a process a thin copper layer, which was evaporated on the Si substrate prior to the [...]
Coulometric determination of arsenic in gallium arsenide crystal wafers
The determination of small variations in the stoichiometry of undoped, semi-insulating gallium arsenide can be achieved by using constant current coulometry. Samples taken from a wafer are etched in HF, dissolved in NaOH-peroxide solution, then treated [...]
Highlights
•MOCVD growth of a p-GaN/i-InGaN/n-GaN (PIN) solar cell on ZnO/Sapphire templates.
•In-depth structural characterizations showing no back-etching of ZnO.
•Chemical lift-off and wafer-bonding of the structure on float glass.
•Structural characterizations of the device on glass.
Abstract
p-GaN/i-InGaN/n-GaN (PIN) structures were grown epitaxially on ZnO-buffered c-sapphire substrates by metal [...]