3″ Silicon Wafer-1

3″ Silicon Wafer-1

PAM XIAMEN offers 3″ Silicon Wafer.

Diameter Type Dopant Growth
method		 Orientation Resistivity  Thickness Surface Grade
76.2 N Phos CZ -100 1-20 43768 P/P PRIME
76.2 N Phos CZ -100 1-20 40-60 P/P PRIME
76.2 N Phos CZ -100 1-20 80-100 P/P PRIME
76.2 N Phos CZ -100 1-20 140-160 P/P PRIME
76.2 N Phos FZ -100 >3000 300-350 P/P PRIME
76.2 N Phos CZ -100 1-20 300-350 P/P PRIME
76.2 N Phos CZ -100 1-20 300-350 P/E PRIME
76.2 N Phos CZ -100 350-400 P/E/OX PRIME
76.2 N As CZ -100 .001-.005 350-400 P/E PRIME
76.2 N Sb CZ -100 .005-.02 350-400 P/E PRIME
76.2 N Phos FZ -100 >3000 350-400 P/E PRIME
76.2 N Phos CZ -100 1-20 350-400 P/E PRIME
76.2 N Phos CZ -100 1-20 350-400 P/E/DTOx PRIME
76.2 N Phos CZ -100 1-20 350-400 P/E/Ni PRIME
76.2 N Phos CZ -100 1-20 350-400 P/E/WTOx
76.2 N Phos CZ -100 20-50 350-400 P/P PRIME
76.2 N Phos CZ -100 20-50 350-400 P/P PRIME
76.2 N Phos CZ -100 20-50 400-450 P/E PRIME
76.2 N Phos CZ -100 450-500 P/P PRIME
76.2 N Phos CZ -100 500-550 P/E PRIME
76.2 N Phos CZ -100 950-1000 P/P PRIME

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices.PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the first generation Germanium wafer, second generation Gallium Arsenide with substrate growth and epitaxy on III-V silicon doped n-type semiconductor materials based on Ga, Al, In, As and P grown by MBE or MOCVD, to the third generation: Silicon carbide and Gallium Nitride for LED and power device application.

2019-03-04

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