PAM XIAMEN offers 3″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
p-type Si:B
[100]
3″
250
P/E
0.15-0.20
SEMI Prime
p-type Si:B
[100]
3″
350
P/E/P
0.100-0.200
SEMI Prime
p-type Si:B
[100]
3″
400
P/P
0.015-0.016
SEMI Prime
p-type Si:B
[100]
3″
380
P/P
0.01-0.02
SEMI Prime
p-type Si:B
[100]
3″
380
P/E
0.003-0.004
SEMI Prime
p-type Si:B
[100]
3″
100
P/P
0.0026-0.0030
SEMI Prime
p-type Si:B
[100]
3″
300
P/E
0.002-0.003
SEMI Prime
p-type Si:B
[100]
3″
525
P/E
0.0020-0.0027
SF @ 45°
p-type Si:B
[100]
3″
380
P/E
0.001-0.005
SEMI Prime
p-type Si:B
[911]
3″
380
P/E
5-6
PF <110>
p-type Si:B
[111]
3″
380
P/E
18-21
SEMI Prime
p-type Si:B
[111]
3″
775
P/E
13-14
Prime, NO Flatst
p-type Si:B
[111]
3″
1000
P/E
10-20
Prime, NO Flatst
p-type Si:B
[111-4°]
3″
380
P/E
8-12
SEMI Prime
p-type Si:B
[111]
3″
2000
P/P
8-9
SEMI Prime, Individual cst
p-type Si:B
[111]
3″
625
P/P
5-8
SEMI Prime
p-type Si:B
[111]
3″
2300
P/P
4-7
SEMI Prime, Individual [...]
2019-03-06meta-author
PAM-XIAMEN offers (20-21) Plane U-GaN Freestanding GaN Substrate
Item
PAM-FS-GAN(20-21)-U
Dimension
5 x 10 mm2 or 5 x 20 mm2
Thickness
380+/-50um
Orientation
(20-21)/(20-2-1) plane off angle toward A-axis 0 ±0.5°
(20-21)/(20-2-1) plane off angle toward C-axis -1 ±0.2°
Conduction Type
N-type / Undoped
Resistivity (300K)
< 0.1 Ω·cm
TTV
≤ 10 µm
BOW
BOW ≤ 10 µm
Surface Roughness:
Front side: Ra<0.2nm, epi-ready;
Back side: Fine Ground or polished.
Dislocation Density
≤5 x 106 cm-2
Macro Defect Density
0 cm-2
Useable Area
> 90% (edge exclusion)
Package
each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room
For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com
2020-08-20meta-author
IR images reveal that Te inclusions exist in CdZnTe crystal in the form of square, hexagonal and triangular shapes. The density of Te inclusions for sizes above 5 μm sharply varied from 2.27 × 103 cm−2 to 4.52 × 105 cm−2 with a consequent reduction in IR transmittance from ∼60.5% to ∼55% when the Te-rich volume increased [...]
PAM-XIAMEN offers 4 inch Blue LED Wafer
Anticipating exploding demand for blue LED chips, Xiamen Powerway Advanced Material Co.,Ltd. (PAM-XIAMEN) shift a GaN LED production line from the current 2-inch-wafer-based operation to 4-inch-wafer facilities within a couple of years.
“We have established the production process based [...]
Silicon Nitride Waveguide – Substrates and Services Provided
PAM XIAMEN offers Silicon Nitride Waveguide
Clients fabricate SiN waveguides using contact lithography and pattern designs with waveguides with widths varying from 0.8 microns to 2.0 microns each of which has a straight reference waveguides and spiral waveguides [...]
2019-02-12meta-author
Thanks to GaAs tunnel junction technology, we offer epi wafers of single-junction and dual-junction InGaP / GaAs solar cells, with different structures of epitaxial layers (AlGaAs, InGaP) grown on GaAs for solar cell application. And now we offer GaAs epi wafer with InGaP tunnel junction as [...]