4 Zoll SiC Epi Wafer

4 Zoll SiC Epi Wafer

As one of leading SiC epi wafer suppliers, PAM-XIAMEN offers SiC epi wafer, and the SiC epi wafers type includes N type and P type. The SiC epi wafer thickness from 1um to 250um can be produced, and the silicon carbide epi wafer prices are competitive. What is SiC epi wafer? SiC epitaxial wafer is an intermediate link in the core of the SiC industry chain. At present, a whole set of industrial systems from silicon carbide substrates and SiC epi wafers to device preparation have been formed in the world. In the epi wafer market, high-quality SiC epitaxy are the basic materials of SiC power devices. The current development trend of silicon carbide epitaxial materials required by power electronic devices at home and abroad is developing in large diameter, low defects, high uniformity and etc.

SiC Epi Wafer

 

1. Spezifikationen des 4-Zoll-SiC-Epi-Wafers

Gegenstand 1:
PAM201221-SIC-EPI

SiC-Substrat
Durchmesser 100mm
Dicke 350um
Polytype 4H-SiC
Leitfähigkeit N-Typ
Off-Orientierung in Richtung 4 Grad außerhalb der Achse
MPD ≤ 1 / cm2
Der spezifische Widerstand 0,015 ~ 0,028 Ohm-cm
Oberflächenfinish Doppelseite poliert
Epi-Schicht
Puffer:
Dicke 0,5 um, n-Typ
Dopinglevel 1E18cm3
Epi 1:
Dicke 6um +/- 5%
n-Doping-Level 5,2E15 / cm3

 

Punkt 2:
PAM210514-SIC-EPI

SiC-Substrat
Durchmesser 100mm
Dicke 350um
Polytype 4H-SiC
Leitfähigkeit N-Typ
Off-Orientierung in Richtung 4 Grad außerhalb der Achse
MPD ≤ 1 / cm2
Der spezifische Widerstand 0,015 ~ 0,028 Ohm-cm
Oberflächenfinish Doppelseite poliert
Epi-Schicht:
Puffer:
Dicke 0,5 um, n-Typ
Dopinglevel 1E18cm3
Epi 1:
Dicke 6um +/- 5%
n-Doping-Level <1E15 / cm3
Niedrige O-, B-, P- und Al-Elemente: B <0,06 ppm; P <0,05 ppm; Al <0,01 ppm; ohne O.

 

2. SiC Epi in the Fields of Low Voltage, Medium Voltage and High voltage

In Bezug auf die Anwendung teilen wir Siliziumkarbid im Allgemeinen in drei Bereiche ein, nämlich Niederspannung, Mittelspannung und Hochspannung. Im Fall von Niederspannung gilt dies hauptsächlich für einige Unterhaltungselektronikgeräte wie PFC und Stromversorgung. Mittelspannung ist hauptsächlich für die Automobilelektronik bestimmt, und Mittelspannung ist auch die Hauptanwendungsrichtung für die zukünftige Entwicklung von SiC-Epi-Wafern. Das dritte ist das Anwendungsende mit relativ hohen Spannungspegeln, wie z. B. Schienenverkehrs- und Stromnetzsystemen über 3300 V.

Gleichzeitig können wir sehen, dass Siliziumkarbid und Galliumnitrid im Mittel- und Niederspannungsbereich immer noch in einer Wettbewerbsbeziehung stehen, aber im Hochspannungsbereich hat Siliziumkarbid aus Sicht der Materialreife einen einzigartigen Vorteil . Es ist jedoch schade, dass es im Hochspannungsbereich bisher kein ausgereiftes Produkt gegeben hat. Der SiC-Epi-Wafer für das Hochspannungsfeld befindet sich weltweit in der Forschungs- und Entwicklungsphase, aber im Mittel- und Niederspannungs-Siliziumkarbid-Epitaxiewafer werden bereits in Dioden und MOSFET-Produkten auf dem Markt eingesetzt.

3. 100mm 4H SiC Epitaxial Wafer Norm

This norm applies to 4H silicon carbide (4H-SiC) epitaxial wafers. The SiC wafer production is mainly used to manufacture power semiconductor devices or power electronic devices.

3.1 Requirements of 4H-SiC Epitaxial Growth in 4 Inch

The substrate is a (0001) silicon surface 4H-SiC wafer with an angle of 4° in the <11-20> direction. The ratio of 4H crystal type to the total area of the silicon carbide wafer should not be less than 90%. The surface of the wafer can be polished on one side or on both sides. The silicon surface of the wafer should be chemically mechanically polished with a surface roughness of less than 0.5 nm. The number of cleanable particles on the surface of the wafer (diameter ≥0.5 um) does not exceed 15/piece.

3.2 Epitaxial Quality Requirements for the SiC wafer

Surface defects of SiC epitaxy should meet the requirements of the following table.

Artikel Maximum Allowable Limit
Industrial Grade Research Grade
Carrots ≤80pcs/wafer ≤100pcs/wafer
Comets
Triangles
Downfalls
Edge Removal 3 mm 3 mm

 

The surface roughness of SiC wafer in size of 4” should be less than 5.0 nm in the entire 4H-SiC epitaxial wafer range.

The thickness uniformity of the 4-inch SiC epitaxial layer should meet: industrial grade ≤5% and research grade ≤7%

Doping concentration uniformity for industrial grade should be ≤30%, and that for research grade should be ≤35%.

4. FAQ about SiC Epitaxy

Q1: I looked at the SiC homoepitaxial wafers on your company website before, and they all have buffer layer. I would like to ask what is the function of the intermediate buffer layer? What effect will it have on the epitaxial layer if directly epitaxial without a buffer layer?

A: The role of the intermediate buffer layer in SiC homoepitaxy is to reduce defect density and provide epitaxial yield.

Q2: Is there a big difference between the growth temperature of the buffer layer and the epitaxial layer of 4H-SiC epitaxial wafer?

A: There is little difference in growth temperature for buffer and epitaxial layer of 4H-SiC epi wafer.

Q3: I am interested in your standard Instrinsic SiC on 4H SiC substrate.The application is to produce electrochemically suspended membranes of ui doped SiC from a n-type substrate, hopefully of thicknesses between 500nm-2000nm. We are trying to determine the performance of our electrochemical undercut process on Si-face and C-face material. Does high wafer resistivity come from high compensation by deep levels, or from a low concentration of impurities in the epi-layer?

A: If so, I think you need 500nm undoped SiC on n-type SiC substrate. Suggest you use thicker thickness. If you must require 2um, we also can do it, the carrier concentration of undoped SiC should be <1E5, typical ~1E4.

Q4: Is it possible to have 4H-SiC epitaxial on 3C-SiC with 20-40micron thickness?

A: 4H-N SiC on 3C-N SiC is prone to phase transition and is not easy to control. Generally speaking, under epitaxial conditions, it is easier to form 3C crystal forms, so it is difficult to estimate the difficulty of epitaxial 4H on 3C. But we can supply 350um thick freestanding 3C-SiC substrate, more specifications please refer to https://www.powerwaywafer.com/3c-sic-wafer.html.

 

Weitere Informationen zu SiC-Epi-Wafern finden Sie unter:

150mm 4H n-Typ-SiC-Epi-Wafern

4H SiC Epitaxial Wafer

Warum brauchen wir Siliziumkarbid-Epitaxiewafer?

Für weitere Informationen kontaktieren Sie uns bitte per E-Mail unter victorchan@powerwaywafer.com und powerwaymaterial@gmail.com.

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