PAM XIAMEN offers 50.8mm Si wafers.
Please send us email at sales@powerwaywafer.com if you need other specs and quantity.
Item | Material | Orient. | Diam (mm) |
Thck (μm) |
Surf. | Resistivity Ωcm |
Comment |
PAM1947 | P/B | [100] | 2″ | 280um | P/E | 0-100 ohm-cm | Test Grade with flat |
PAM1948 | N/Ph | [100] | 2″ | 280um | P/E | 0-100 ohm-cm | Test Grade with flat |
PAM1949 | P/B | [100] | 2″ | 280um | P/E | 1-10 ohm-cm | Prime Grade with Flat |
PAM1950 | N/Ph | [100] | 2″ | 280um | P/E | 1-10 ohm-cm | Prime Grade with Flat |
PAM1951 | P/B | [100] | 2″ | 280um | P/E | 0.001-0.005 ohm-cm | Prime Grade with Flat |
PAM1952 | P/B | [111] | 2″ | 280um | P/E | 1-10 ohm-cm | Prime Grade with Flat |
PAM1953 | P/B | [111] | 2″ | 280um | P/E | 0.001-0.005 ohm-cm | Prime Grade with Flat |
PAM1954 | N/As | [100] | 2″ | 280um | P/E | 0.001-0.005 ohm-cm | Test Grade with flat |
PAM1955 | P/B | [100] | 2″ | 280um | P/E | 1-20 ohm-cm | Test Grade with flat |
PAM1956 | Undoped | [100] | 2″ | 280um | P/P | >10,000 ohm-cm | Prime Grade |
PAM1957 | p-type Si:B | [110] ±0.5° | 2″ | 279 | P/E | FZ >1,000 | 2Flats, hard cst |
PAM1958 | p-type Si:B | [100] | 2″ | 300 ±15 | P/P | FZ 3,000–4,000 | SEMI Test (Bad back–side, with scratches & edge chips, 1Flat, hard cst, TTV<7μm |
PAM1959 | p-type Si:B | [100] | 2″ | 300 | P/E | FZ 2,800–3,300 | SEMI Prime, 1Flat, hard cst, TTV<7μm |
PAM1960 | p-type Si:B | [100] | 2″ | 300 | P/E | FZ 2,800–3,300 | SEMI Prime, 1Flat, hard cst, TTV<7μm |
PAM1961 | p-type Si:B | [100] | 2″ | 300 | P/E | FZ 2,800–3,300 | SEMI Prime, 1Flat, hard cst, TTV<7μm |
PAM1962 | p-type Si:B | [111] ±0.5° | 2″ | 500 | P/P | FZ 5,000–6,500 | SEMI Test (in unsealed cassette), 1Flat |
PAM1963 | p-type Si:B | [111] ±0.5° | 2″ | 275 | P/E | FZ 3,000–5,000 | SEMI Prime, 1Flat, Lifetime>2,000μs, in hard cassettes of 5 wafers |
PAM1964 | p-type Si:B | [111–7° towards[110]] ±0.5° | 2″ | 279 | P/P | FZ >2,000 | SEMI Prime, 1Flat, hard cst |
PAM1965 | p-type Si:B | [111] ±0.5° | 2″ | 331 | P/E | FZ 2,000–5,000 | SEMI, Soft cst |
PAM1966 | p-type Si:B | [111] ±0.5° | 2″ | 331 | P/E | FZ 2,000–5,000 | SEMI TEST (Scratched), Soft cst |
PAM1967 | p-type Si:B | [111] ±0.5° | 2″ | 331 | P/E | FZ 2,000–5,000 | SEMI Prime, in Soft cassettes of 4 wafers |
PAM1968 | p-type Si:B | [111] | 2″ | 381 | P/E | FZ 2,000–5,000 | SEMI TEST (Wafers scratched and cannot be recleaned), hard cst |
PAM1969 | p-type Si:B | [111] ±0.5° | 2″ | 280 ±15 | P/E | FZ >1,000 | SEMI, 2Flats, hard cst |
PAM1970 | p-type Si:B | [111] ±0.5° | 2″ | 275 | P/P | FZ 1–10 | SEMI Prime, 1Flat, hard cst |
PAM1971 | n-type Si:P | [110] ±1° | 2″ | 525 | P/E | FZ 5,000–10,000 | SEMI Prime, Lifetime>1,000μs, Primary Flat @ [111]±0.5°, Secondary Flat @ [111] 70.5° CW from Primary, in hard cassettes of 7, 8 & 8 wafers |
PAM1972 | n-type Si:P | [110] ±1° | 2″ | 525 | P/E | FZ 5,000–10,000 | SEMI Prime, Lifetime>1,000μs, Primary Flat @ [111]±0.5°, Secondary @ [111] 70.5° CW from Primary |
PAM1973 | n-type Si:P | [110] ±0.5° | 2″ | 400 | P/E | FZ 4,000–20,000 | SEMI, 1Flat, hard cst, Lifetime>1,000μs |
PAM1974 | n-type Si:P | [110] | 2″ | 900 | P/E | FZ 130–350 | SEMI Prime, 1Flat, hard cst |
PAM1975 | n-type Si:P | [110] ±0.5° | 2″ | 900 | P/E | FZ 50–100 | SEMI Prime, hard cst, Primary Flat only at [111]±0.5° |
PAM1976 | n-type Si:P | [100] | 2″ | 430 | P/E | FZ >5,000 | Prime, hard cst, TTV<5μm |
PAM1977 | n-type Si:P | [100] | 2″ | 300 | P/E | FZ >600 | SEMI Prime, 2Flats, hard cst |
PAM1978 | n-type Si:P | [100] | 2″ | 300 | P/E | FZ >600 {1,400–2,000} | SEMI Prime, 2Flats, hard cst |
PAM1979 | n-type Si:P | [100] | 2″ | 200 | P/P | FZ 500–1,000 | SEMI, 2Flats, in hard ccassettes of 4, 5 & 5 wafers |
PAM1980 | n-type Si:P | [100] | 2″ | 500 | P/P | FZ >200 | SEMI Prime, 2Flats, hard cst |
PAM1981 | n-type Si:P | [100] | 2″ | 225 | P/P | FZ >100 | SEMI, 2Flats, Individual cst, 1 very deep scratch |
PAM1982 | n-type Si:P | [100] | 2″ | 280 | P/E | FZ 60–90 | SEMI Prime, 1Flat, hard cst |
PAM1983 | n-type Si:P | [100] | 2″ | 150 | P/P | FZ 50–110 | SEMI Prime, 2Flats, hard cst |
PAM1984 | n-type Si:P | [111–3.5° towards[110]] ±0.5° | 2″ | 279 ±15 | P/E | FZ >2,000 | SEMI Prime, 1Flat, hard cst |
PAM1985 | n-type Si:P | [111] ±0.5° | 2″ | 280 | P/P | FZ 2,000–4,000 | SEMI Prime, 1Flat, hard cst, TTV<5μm, Both–sides Epi–Ready |
PAM1986 | n-type Si:P | [111] ±0.5° | 2″ | 280 | P/P | FZ 2,000–4,000 | SEMI Prime, 1Flat, hard cst, TTV<5μm |
PAM1987 | n-type Si:P | [111] ±0.5° | 2″ | 280 | P/P | FZ 2,000–4,000 | SEMI Prime, 1Flat, hard cst |
PAM1988 | n-type Si:P | [111] ±0.5° | 2″ | 300 | P/P | FZ 2,000–4,000 | SEMI Prime, 2Flats, hard cst |
PAM1989 | n-type Si:P | [111] ±0.5° | 2″ | 500 | P/P | FZ 650–1,000 {660–900} | SEMI, 2Flats, in hard cassettes of 8 wafers |
PAM1990 | n-type Si:P | [111] ±0.5° | 2″ | 500 | P/P | FZ 300–1,000 | SEMI Prime, 2Flats, hard cst |
PAM1991 | n-type Si:P | [111] ±0.5° | 2″ | 500 | P/P | FZ 10–55 | SEMI Prime, 2Flats, hard cst |
PAM1992 | Intrinsic Si:- | [110] ±0.5° | 2″ | 275 | P/E | FZ >20,000 | SEMI Prime, 1Flat, hard cst |
PAM1993 | Intrinsic Si:- | [110] ±0.5° | 2″ | 275 | P/E | FZ >20,000 | SEMI Prime, 1Flat, hard cst |
PAM1994 | Intrinsic Si:- | [100] | 2″ | 280 | P/P | FZ >20,000 | SEMI Prime, 1Flat, hard cst |
PAM1995 | Intrinsic Si:- | [100] | 2″ | 280 | P/E | FZ >20,000 | SEMI Prime, 1Flat, hard cst |
PAM1996 | Intrinsic Si:- | [100] | 2″ | 280 | P/E | FZ >20,000 | SEMI Prime, 1Flat, hard cst, Lifetime>1,000μs; 5 Prime wafers, 8 wafers with up to 2 scratches each |
PAM1997 | Intrinsic Si:- | [100] | 2″ | 280 | P/E | FZ >20,000 | SEMI Prime, hard cst |
PAM1998 | Intrinsic Si:- | [100] | 2″ | 300 | P/P | FZ >20,000 | SEMI Prime, 1Flat, hard cst, TTV<5μm |
PAM1999 | Intrinsic Si:- | [100] | 2″ | 400 | P/P | FZ >20,000 | SEMI Prime, 1Flat, hard cst |
PAM2000 | Intrinsic Si:- | [100] | 2″ | 400 | P/P | FZ >20,000 | SEMI Prime, 1Flat, hard cst |
PAM2001 | Intrinsic Si:- | [100] | 2″ | 280 ±10 | P/P | FZ >10,000 | SEMI Prime, 2Flats, hard cst, TTV<3μm, Bow<10μm, Warp<10μm |
PAM2002 | Intrinsic Si:- | [100] | 2″ | 350 | P/P | FZ >10,000 | SEMI Test, 1Flat, hard cst, Wafers with edge chips |
PAM2003 | Intrinsic Si:- | [100] | 2″ | 500 ±10 | P/E | FZ >10,000 | SEMI Prime, 1Flat, hard cst |
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices.PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.
Quality is our first priority. PAM-XIAMEN has been ISO9001:2008, owns and shares four modern facories which can provide quite a big range of qualified products to meet different needs of our customers, and every order has to be handled through our rigorous quality system. Test report is provided for each shipment, and each wafer are warranty.