PAM XIAMEN offers Si+SiO2+Ti(TiO2)+Pt (Poly or single crystalline)Thin Film, specifications are as follows:
1. Specifications of Coated Silicon Wafer
Si+SiO2 +Ti( or TiO2)+Pt (111) Highly Oriented Polycrystal
SiO2+Ti+Pt (111) thin film on Si substrate, 5x5x0.525mm, 1sp, P-type, B-doped, (SiO2=300nm, Ti=10nm, Pt(111)=150nm)
SiO2+Ti+Pt(111) thin film on Si substrate [...]
2019-04-29meta-author
PAM XIAMEN offers 4″FZ Silicon Ignot.
Silicon ingot, per SEMI, 100.7±0.3mmØ,
FZ n-type Si:P[111]±2.0°, Ro=(2,000-4,000)Ohmcm,
NO Flats.
NOTE: Oxygen<1E16/cc, Carbon<1E16/cc,
MCC Lifetime>1,000µs
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material [...]
2019-07-04meta-author
PAM XIAMEN offers 4″ Silicon EPI Wafers.
Substrate
EPI
Comment
Size
Type
Res
Ωcm
Surf.
Thick
μm
Type
Res
Ωcm
4″Øx525μm
n- Si:As[111]
0.0010-0.0035
P/E
20
n- Si:P
7±10%
N/N/N+
4″Øx525μm
n- Si:As[111]
0.0010-0.0035
P/E
10
n- Si:P
2±0.4
N/N/N+
4″Øx380μm
n- Si:As[111]
0.001-0.005
P/EOx
21
n- Si:P
150 ±10%
N/N+
4″Øx525μm
n- Si:As[111]
0.0010-0.0035
P/E
22.5
n- Si:P
12±10%
N/N/N+
4″Øx525μm
n- Si:As[111]
0.0010-0.0035
P/E
28.5
n- Si:P
2±10%
N/N/N+
4″Øx525μm
n- Si:As[111]
0.0010-0.0035
P/E
26
n- Si:P
18±10%
N/N/N+
4″Øx525μm
n- Si:As[111]
0.0010-0.0035
P/E
11
n- Si:P
2±10%
N/N/N+
4″Øx525μm
n- Si:As[111]
0.001-0.005
P/E
27
n- Si:P
220 ±10%
N/N+
4″Øx525μm
n- Si:As[111]
0.001-0.005
P/E
27.5
n- Si:P
>250
N/N+
4″Øx525μm
n- Si:As[111]
0.001-0.005
P/E
28
n- Si:P
165 ±10%
N/N+
4″Øx525μm
n- Si:As[111]
0.0010-0.0035
P/E
28
n- Si:P
43688
N/N/N+
4″Øx525μm
n- Si:As[111]
0.0010-0.0035
P/E
9-11
n- Si:P
43468
N/N/N+
4″Øx525μm
n- Si:As[111]
0.0010-0.0035
P/E
28
n- Si:P
11±10%
N/N/N+
4″Øx525μm
n- Si:As[111]
0.0010-0.0035
P/E
8-12
n- Si:P
43468
N/N/N+
4″Øx525μm
n- Si:As[111]
0.0010-0.0035
P/E
30
n- Si:P
11±10%
N/N/N/N+
4″Øx525μm
n- Si:As[111]
0.0010-0.0035
P/E
15
n- Si:P
4±10%
N/N/N/N+
4″Øx525μm
n- Si:As[111]
0.0010-0.0035
P/E
5
n- Si:P
1.5±10%
N/N/N/N+
4″Øx525μm
n- [...]
2019-03-08meta-author
PAM XIAMEN offers MgO Magnesium Oxide Single Crystal.
High quality MgO magnesium oxide crystals are used are used widely for various thin film applications. Customized MgO crystal substrates are available upon request.
1.Specification of MgO Magnesium Oxide Single Crystal
Main Parameters
Growth Method
Special Arc Melting
Crystal Structure
Cubic
Unit cell constant
a = [...]
2019-03-14meta-author
PAM XIAMEN offers4″ Silicon EPI Wafer-6
4″ Si epi wafer
Structure:
(Top layer intrinsic Si / Middle layer Phosphorus Doped / Ion Implantation / Si substrate)
Top layer intrinsic Si:
Resistivity≥50Ωcm,
Thickness 5μm,
Residual carrier concentration<1×1014/cm3
Middle layer Phosphorus Doped:
Resistivity around 0.025Ωcm (Phosphorous concentration 7×017/cm3),
Thickness 20μm,
Residual carrier concentration<2.1×1013/cm3
Layer with Ion Implantation: handled [...]
2019-11-01meta-author
PAM-XIAMEN, one of leading GaN substrate manufacturers, offers 10*10mm2 N-Type Freestanding GaN Substrate. To get more specific information please see the table below:
1. N-Type Freestanding GaN Substrate Specification
Item
PAM-FS-GAN-50-N
Dimension
10 x 10.5 mm2
Thickness
380+/-50um
Orientation
C plane (0001) off angle toward M-axis 0.35 ±0.15°
Conduction Type
N-type / Si Doped
Resistivity (300K)
< 0.05 Ω·cm
TTV
≤ 10 µm
BOW
BOW ≤ 10 µm
Surface Roughness:
Front side: Ra<0.2nm, epi-ready;
Back side: Fine Ground or polished.
Dislocation Density
≤5x 106 cm-2 (calculated by CL)*
Macro Defect Density
0 cm-2
Useable Area
> 90% (edge exclusion)
Package
each in single wafer container, under nitrogen atmosphere, packed in [...]
2020-08-17meta-author