PAM XIAMEN offers 6″ Silicon Wafer.
| Material | Orient. | Diam. | Thck (μm) |
Surf. | Resistivity Ωcm |
Comment |
| p-type Si:B | [100] | 6″ | 350 | P/P | FZ 2,700-3,250 | SEMI Prime, 1Flat (57.5mm) |
| p-type Si:B | [100] | 6″ | 900 | C/C | FZ >50 | SEMI Prime, 1Flat, MCC Lifetime>6,000μs |
| n-type Si:P | [100] | 6″ | 825 | C/C | FZ 7,000-8,000 {7,025-7,856} | SEMI, 1Flat, Lifetime=7,562μs |
| n-type Si:P | [100-6° towards[111]] ±0.5° | 6″ | 675 | P/P | FZ >3,500 | SEMI Prime, 1Flat (57.5mm) |
| n-type Si:P | [100-6° towards[111]] ±0.5° | 6″ | 790 ±10 | C/C | FZ >3,500 | SEMI, 1Flat |
| n-type Si:P | [100-6° towards[111]] ±0.5° | 6″ | 675 | P/P | FZ >1,000 | SEMI Prime, Notch on <010> {not on <011>}, Laser Mark |
| n-type Si:P | [100-6° towards[111]] ±0.5° | 6″ | 675 | BROKEN | FZ >1,000 | SEMI notch Test, Broken into many large pieces. One piece ~50% of wafers other pieces ~20% of wafer |
| n-type Si:P | [100] | 6″ | 500 ±10 | P/P | FZ 60-75 | SEMI Prime, 1Flat, MCC Lifetime>14,980μs, Lasermark |
| n-type Si:P | [100] | 6″ | 725 | P/P | FZ 50-70 {57-62} | SEMI Prime, 1Flat (57.5mm), Lifetime=15,799μs |
| n-type Si:P | [100] | 6″ | 1,300 ±10 | E/E | FZ 0.01-0.05 | SEMI notch |
| n-type Si:P | [111] ±0.5° | 6″ | 300 ±15 | BROKEN | FZ >6,000 | Test,Broken into a dozen large pieces ranging from 65% of wafer to 5% and small pieces as well |
| n-type Si:P | [112-5.0° towards[11-1]] ±0.5° | 6″ | 875 ±10 | E/E | FZ >3,000 | SEMI, 1Flat (47.5mm), TTV<4μm, Surface Chips |
| n-type Si:P | [112-5° towards[11-1]] ±0.5° | 6″ | 1,000 ±10 | C/C | FZ >3,000 | SEMI, 1 JEIDA Flat (47.5mm), TTV<4μm, Lifetime>1,000μs |
| Intrinsic Si:- | [100] | 6″ | 625 ±15 | P/P | FZ >20,000 | SEMI Prime, 1Flat (57.5mm) |
| Intrinsic Si:- | [111] ±0.5° | 6″ | 750 | E/E | FZ >10,000 | SEMI notch, TEST (defects, cannot be polished out) |
| p-type Si:B | [110] ±0.5° | 6″ | 390 ±10 | C/C | >10 | 2Flats |
| p-type Si:B | [110] | 6″ | 675 | P/E | 0.01-0.02 | Prime, PFlat @ [111]±0.25°, SF @ [111]±5° 109.5° CW from PF |
| p-type Si:B | [100] | 6″ | 675 | P/E | 50-150 | SEMI Prime, 1Flat (57.5mm) |
| p-type Si:B | [100] | 6″ | 1000 | P/P | 10-15 | SEMI Prime, 1Flat (57.5mm), 4 Prime wafers plus 2 scratched wafers at no cost |
| p-type Si:B | [100] | 6″ | 675 | P/E | 5-10 | SEMI Prime, 1Flat (57.5mm) |
| p-type Si:B | [100] | 6″ | 1000 | P/E | 5-10 | SEMI Prime, 1Flat (57.5mm) |
| p-type Si:B | [100-9.7° towards[001]] ±0.1° | 6″ | 525 | P/P | 1-100 | SEMI Prime, 1Flat (57.5mm) at <110>±0.1º |
| p-type Si:B | [100] | 6″ | 675 | P/P | 1-30 | SEMI Prime, 1Flat, Soft cst |
| p-type Si:B | [100-6° towards[111]] ±0.5° | 6″ | 675 | P/E | 1-5 | SEMI Prime, 1Flat (57.5mm) |
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices.PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.
PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the first generation Germanium wafer, second generation Gallium Arsenide with substrate growth and epitaxy on III-V silicon doped n-type semiconductor materials based on Ga, Al, In, As and P grown by MBE or MOCVD, to the third generation: Silicon carbide and Gallium Nitride for LED and power device application.