Distribution of defects and impurities in gallium arsenide wafers after surface gettering
Gettering of defects and impurities in GaAs using a heat treatment (HT) of the yttrium-coated wafers has been investigated. The gettering has been established to be of a volume character. That has allows [...]
Assessment of the overall resource consumption of germanium wafer production for high concentration photovoltaics
The overall resource requirements for the production of germanium wafers for III–V multi-junction solar cells applied in concentrator photovoltaics have been assessed based on up to date process information. By employing [...]
PAM XIAMEN offers Silicon Ingots.
Material Description
FZ NTD 3″Ø ingot n-type Si:P[111] ±2°, Ro: 50-60 Ohmcm, MCC Lifetime>400μs, (2 ingots: 197mm, 277mm) SEMI
FZ 8″Ø ingot n-type Si:P[100] ±2.0°, Ro: 163-174 Ohmcm, MCC Lifetime>14581μs, (1 ingot: 83mm)
FZ 6″Ø ingot p-type Si:B[100] ±2.0°, Ro: 1-2 Ohmcm, MCC Lifetime>1777μs,
FZ 6″Ø ingot p-type [...]
2019-03-08meta-author
PAM XIAMEN offers Ga2O3 Beta Gallium Oxide Wafer and crystal Substrates SEMI-insulating type.
SPECIFICATIONS:
Crystal structure: Monoclinic
Lattice parameter:
a = 12.225 A
b = 3.040 A
c = 5.809 A
β = 103.7 degree
Melt point (℃): 1725
Density: 5.95(g/cm3)
Dielectric constants: 10
Band Gap: 4.8 – 4.9 eV
Conductivity: Semi-insulating
Breakdown Voltage (V/cm): 8 MV/cm
Available Size: 5 x 5 mm, 10 x 10 mm,Ф1″ (1 inch diameter). Special [...]
2019-03-12meta-author
Colleges and universities are not only the gathering place of innovative talents, but also the source of innovation achievements. PAM-XIAMEN has collected the research and development (R&D) expenditure rankings of U.S. higher education institutions in 2019~2020.
As a leading manufacturer of semiconductor materials, PAM-XIAMEN is [...]
2022-08-31meta-author
InAs heteroepitaxial layer grown on GaAs (100) substrate is very meaningful in the field of optoelectronics, especially in the field of infrared detectors and lasers. InAs has some potential characteristics, such as high electron mobility and narrow energy gap, and many metals can be [...]
2023-02-10meta-author