PAM XIAMEN offers W – Tungsten Polycrystalline Metal Substrates.
General Properties for Tungsten
Symbol W
Atomic Number 74
Atomic Weight: 183.84
Crystal structure: BCC
Lattice constant at room temperature: 0.316 nm
Density: 19.25 g/cm3
Melting Point: 3422 °C
Boiling Point: 5555 °C
Tungsten (W) Polycrystalline Substrate: [...]
2019-05-10meta-author
Evaluation of the quality of commercial silicon carbide wafers by an optical non-destructive inspection technique
There is a great need for an in-line, high-speed and non-destructive inspection system capable of evaluating and analyzing the quality SiC wafers for SiC power devices. We have examined whether [...]
This paper describes the bonding characteristics of 3C-SiC wafers using plasma enhanced chemical vapor deposition (PECVD) oxide and hydrofluoric acid (HF) treatment for SiC-on-insulator (SiCOI) structures and high-temperature microelectromechanical system (MEMS) applications. In this work, insulator layers were formed on a heteroepitaxial 3C-SiC film [...]
2015-08-19meta-author
We present a numerical study of the electronic and optical properties of a model single-element superlattice made of a periodic sequence of relaxed and strained regions of a germanium crystal, realized by means of an externally applied strain. We adopt the tight-binding model to [...]
2019-01-28meta-author
PAM XIAMEN offers 3″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
n-type Si:P
[111] ±0.5°
3″
415 ±15
E/E
FZ 2,000-5,000
SEMI Prime, Lifetime>1,500μs
n-type Si:P
[111] ±1°
3″
508
E/E
FZ 182-196
SEMI Test, TTV<3μm
Intrinsic Si:-
[100]
3″
300
P/P
FZ >20,000
SEMI Prime
Intrinsic Si:-
[100]
3″
300
P/P
FZ >20,000
SEMI Prime
Intrinsic Si:-
[100]
3″
380
P/E
FZ >20,000
SEMI Prime
Intrinsic Si:-
[100]
3″
380
P/E
FZ >20,000
SEMI Test, unpolished side has stain
Intrinsic Si:-
[100]
3″
380
P/E
FZ >20,000
SEMI Prime
Intrinsic Si:-
[100]
3″
500
P/P
FZ >20,000
SEMI Prime
Intrinsic Si:-
[100]
3″
500
P/P
FZ >20,000
SEMI Prime, Front Side Prime, back side Test
Intrinsic Si:-
[100]
3″
650
P/P
FZ >10,000
SEMI Prime, with LM, TTV<2μm
Intrinsic Si:-
[100]
3″
700
P/P
FZ >10,000
Test, scratrches and stains. [...]
2019-03-06meta-author
PAM XIAMEN offers Yttrium Stabilized Zirconia (YSZ) Single Crystals Substrate.
Main Parameters
Crystal structure
M3
Unit cell constant
a=5.147 Å
Melt point(℃)
2700
Density(g/cm3)
6
Hardness
8-8.5(mohs)
Purity
99.99%
Thermal expansion(/℃)
10.3×10-6
Dielectric constants
ε=27
Growth method
arcs
Size
10×3,10×5,10×10,15×15,,20×15,20×20
dia2” x 0.33mm dia2” x 0.43mm 15 x 15 mm
Thickness
0.5mm,1.0mm
Polishing
Single or double
Crystal orientation
<001>±0.5º
redirection precision
±0.5°
Redirection the edge:
2°(special in 1°)
Angle of crystalline
Special size and orientation are available upon [...]
2019-03-15meta-author