Global and China GaAs-based Device Market Distinct from traditional silicon semiconductor, gallium arsenide (GaAs) is a compound of the elements gallium and arsenic. It is an III-V semiconductor and is mainly used in handset RF front end like power amplifier (PA). In the 4G era, [...]
2012-09-29meta-author
PAM-XIAMEN can offer SiC substrate and epitaxy wafer for fabricating IGBT devices. The emergence of the third-generation wide-bandgap semiconductor SiC wafer has shown stronger competitiveness in the fields of high voltage, high temperature, and high power. The n-IGBT (insulated gate bipolar transistor) is further [...]
2022-04-14meta-author
Extended defects and precipitates in LT-GaAs, LT-InAlAs and LT-InP We review the main structural characteristics of low temperature molecular beam epitaxially produced GaAs (LT-GaAs), LT-InAlAs, and LT-InP. These materials exhibit almost identical behaviours with respect to growth and annealing conditions. For too low growth temperatures [...]
The long-wavelength InGaAsN quantum well laser based on GaAs substrate is one of the most promising development directions. InGaAsN laser structures are usually grown by molecular beam epitaxy (MBE) or metal organic vapor deposition (MOCVD). InGaNAs material is a promising material for long wavelength [...]
PAM XIAMEN offers 4″CZ Prime Silicon Wafer Thickness 525 ± 25 µm. PRIME WAFERS SILICIUM CZ DIAMETER 4 inch (100mm+/-0.5mm) ORIENTATION <1-0-0> +/-1° THICKNESS : 525µm +/-25µm SSP TTV < 10µm – BOW < 40µm FLAT : 32.5mm TYPE P RESISTIVITY : 8 – [...]
2019-07-04meta-author
PAM XIAMEN offers 6″FZ Prime Silicon Wafer-2 6″ Si wafer, Diameter 150mm, FZ Gas Dope, DSP, N(111), resistivity 5000-10,000Ωcm PARAMETER SPECIFICATION GENERAL CHARACTERISTICS 1 Growth Method FZ Gas Dope 2 Crystal Orientation (111) 3 Conductivity Type n 4 Dopant Phosphorus. 5 Nominal Edge Exclusion 6 mm ELECTRICAL CHARACTERISTICS 6 Resistivity 5000 – 10,000 Wcm 7 Life Time >1500 µsec CHEMICAL CHARACTERISTICS 8 Oxygen Concentrations < 2xE16 at/cm3 9 Carbon Concentrations < 2xE16 at/cm3 WAFER PREPARATION CHARACTERISTICS 10 Front Surface Condition Polished, DSP 11 Edge [...]
2020-04-17meta-author