PAM XIAMEN offers LSGM single crystal substrate.
Now LSGM (La 0.95 Sr 0.05 Ga 0.95 Mg 0.05 O 3-δ) single crystal substrate is commercially available from PAM XIAMEN by contract growth via CZ method. LSGM has the advantage of a broad electrolytic domain with [...]
2019-05-10meta-author
PAM-02A2 series detectors are super small sized detectors based on planar CZT. They can detect α-ray, γ-ray and β-ray simultaneously.
PAM-02A2 integrates CZT crystal, low noise charge preamplifier circuit, SK shaping circuit and high-voltage circuit. With ordered cable, it can output Quasi-gaussian signal or [...]
2019-04-23meta-author
Thanks to GaAs tunnel junction technology, we offer epi wafers of single-junction and dual-junction InGaP / GaAs solar cells, with different structures of epitaxial layers (AlGaAs, InGaP) grown on GaAs for solar cell application. And now we offer GaAs epi wafer with InGaP tunnel junction as [...]
PAM XIAMEN offers 2″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
Intrinsic Si:-
[100-4.0°] ±0.5°
2″
400
P/E
FZ >20,000
SEMI Prime, TTV<5μm
Intrinsic Si:-
[100]
2″
400
P/E
FZ >20,000
SEMI Prime, TTV<5μm
Intrinsic Si:-
[100]
2″
200
P/P
FZ >10,000
SEMI Prime
Intrinsic Si:-
[100]
2″
350
P/P
FZ >10,000
SEMI Test, Wafers with edge chips
Intrinsic Si:-
[100]
2″
500 ±10
P/E
FZ >10,000
SEMI Prime
Intrinsic Si:-
[100]
2″
500 ±10
P/E
FZ >10,000
SEMI Prime
Intrinsic Si:-
[100]
2″
500 ±10
P/E
FZ >10,000
SEMI Prime
Intrinsic Si:-
[100]
2″
300
P/E
FZ 5,000-10,000
SEMI Prime
Intrinsic Si:-
[100]
2″
300
P/E
FZ 5,000-10,000
SEMI Prime, in hard cassettes of 2 & 5 wafers
Intrinsic Si:-
[111] ±0.5°
2″
330
P/P
FZ >20,000
SEMI
Intrinsic Si:-
[111] ±0.5°
2″
330
P/P
FZ >20,000
SEMI
Intrinsic Si:-
[111] [...]
2019-03-07meta-author
This study presents a new ultrathin SiC structure prepared by a catalyst free carbothermal method and post-sonication process. We have found that merging ultra-light 3D graphene foam and SiO together at high temperature leads to the formation of a complex SiC structure consisting of [...]
2019-01-09meta-author
The paper describes experimental results on low temperature plasma-assisted molecular beam epitaxy of GaN/AlN heterostructures on both 6H-SiC and Si(111) substrates. We demonstrate that application of migration enhanced epitaxy and metal-modulated epitaxy for growth of AlN nucleation and buffer layers lowers the screw and [...]
2019-11-05meta-author