Wafer-Liste

Silicon Wafer & Silicon Epi Wafer

2019/2 Stoichiometric LPCVD Nitride on Silicon Wafers Low Stress Nitride Silicon Wafers Super Low Stress Nitron on Silicon Wafers PECVD Nitride Targeted Stress LPCVD Nitride Silicon Nitride Waveguide – Substrates and Services Provided Custom Silicon Wafers Silicon Epi Wafers Sale P-type silicon substrates N-Type Silicon Substrates Undoped Silicon Wafers Float Zone Silicon Wafers Ultra-Thinned Silicon Wafers Solar Silicon Wafers Silicon Ingots -1 Silicon Ingots [...]

2019-02-15 Weiterlesen ...

LN Thin Film on Insulator

Lithiumniobat(LN)-Dünnfilm auf Isolator Einkristalline Lithiumniobat(LN)-Filme können auf einem Lithiumniobat-Substrat integriert werden. Die Struktur kann in elektrooptischen Modulatoren, optischen Wellenleitern, Resonatoren, SAW-Vorrichtungen, FRAM-Speichervorrichtungen usw. verwendet werden. Dünnschichten aus einkristallinem Lithiumniobat sind von großer Bedeutung für die Entwicklung von photonischen Schaltungen und elektronischen Vorrichtungen [...]

2018-08-22 Weiterlesen ...

LNOI mit Metallelektrode

Lithiumniobat (LNOI) mit Metallelektrode Zwischen der SiO2-Schicht und dem LN-Film befinden sich Metallelektrodenschichten (Au, Pt, Al oder andere Metalle). An den LN-Film kann zwischen der Metallelektrodenschicht und der oberen Elektrodenschicht ein elektrisches Feld angelegt werden. Basierend auf piezoelektrischem Effekt, ferroelektrischem Domänenschalteffekt, [...]

2018-08-22 Weiterlesen ...

Ultra Flat Wafer Ultra Thin Wafer

Ultraflache Wafer Ultradünne Wafer Wir verbessern die Gleichmäßigkeit der Waferdicke (TTV) durch Waferdünnungsdienste und chemisch-mechanische Polierdienste (CMP), die Wafer (wie LN, LT, Silizium und Quarz) auf ultraflache oder ultradünne Wafer übertragen . Wir können ultraflache Siliziumwafer, ultraflache Quarzwafer, ultradünne LN-Wafer, ultradünne LT-Wafer herstellen, um die Anforderungen [...]

2018-08-22 Weiterlesen ...

Glaswafer

Wir sind einer der weltweit führenden Anbieter von Glaswafern und bieten dünne und ultradünne Glaswafer und Substrate aus verschiedenen Materialien wie Borofloat, Quarzglas und BK7, Natronkalk usw. für MEMS, Glasfaser-AWG und LCD Anwendung von Panels und OLED-Substraten. Diese Waffeln sind [...]

2018-07-11 Weiterlesen ...

Einkristall

Single Crystal CeO2 Crystal Fe3O4 Crystal SnO2 Crystal Cu2O Crystal Fe2O3 Crystal MnO Crystal PrScO3 Crystal Substrate NdScO3 Crystal Substrate NdScO3 Crystal Substrate GdScO3 Crystal Substrate DyScO3 Crystal Substrate SOI Wafer Ti Terminal SrTiO3 HOPG（highly oriented pyrolytic graphite） ZnO/cAl2O3 Film AIN on Sapphire Wafer

2018-07-10 Weiterlesen ...

Epi / Thin Film auf Substrat

Epi/Thin Film on Substrate GaN Substrate/Template SiO2+Si3N4 on Silicon wafer Substrate GaAs/AlGaAs  on GaAs (Si) Substrate SiC 4H Film on  4H-SiC Substrate AlN Thin Film Substrate Aluminum Film Substrate Silicon Nitride on Corning 7980 Substrate La0.7Sr0.3MnO3 + PbZr(x)Ti(1-x)O3 on Nb(SrTiO3) substrate Diamond on Silicon Wafer Substrate Ag Conductive Film（Planarized silver nanowir）substrate FTO Film on Substrates Silicon Nitride on Silicon substrate La0.5Sr0.5TiO3  film substrate Au-coated [...]

2018-07-10 Weiterlesen ...

Superconductor Substrate

Superconductor Substrates Crystal Structure M.P. Density Thermal Expansion Dielectric constant Growth Tech. & max. size standard 1or 2 sides epi polished wafer oC g/ cm3   LSAT Cubic 1840 6.74 10 22 CZ 20x20x0.5mm (LaAlO3)0.3 -(Sr2AlTaO8)0.7 a=3.868 Å Ø35mm 10x10x0.5mm LaAlO3 Rhombo. 2100 6.51 9.2 24.5 CZ Ø3″x0.5mm a=3.790 Å Ø3″ Ø2″x0.5mm c=13.11 Å   Ø1″x0.5mm     10x10x0.5mm MgO Cubic 2852 3.58 12.8 9.8 Flux Ø2″x0.5mm a=4.21 Å Ø2″ 10x10x0.5mm NdGaO3 Orthor. 1600 7.57 7.8 25 CZ Ø2″x0.5mm a=5.43 Å Ø2″ 10x10x0.5mm b=5.50 Å     c=7.71 Å     SrTiO3 Cubic 2080 5.12 10.4 300 vernuil 10x10x0.5mm a=3.90 Å Ø30mm SrLaAlO4 Tetrag. 1650 16.8 CZ 10x10x0.5mm a=3.756 Å Ø20mm c=12.63 Å   YAlO3 Orthor. 1870 4.88 2 ~ 10 16`20 CZ 10x10x0.5mm a=5.176 Å b=5.307 Å Ø30mm c=7.355 Å   YSZ Cubic ~2500 5.8 10.3 27 Flux Ø2″x0.5mm a=5.125 Å Ø2″ 10x10x0.5m

2018-07-10 Weiterlesen ...

Substrate für die III-V-Nitridfilmabscheidung

Substrates for III-V nitride Film Deposition Crystal Structure M.P. Density Lattice Mis-match to GaN Thermal Expansion Growth Tech. .& Max size Standard substrate size (mm) oC g/cm3 (10-6/k) SiC (6H as example) Hexagonal ~2700 3.21 3.5 % atori. 10.3 CVD Ø2″ x 0.3,Ø3″x0.3 a=3.073  Å     20x20x0.3,15x15x0.3 c=15.117 Å   Ø3“ 10x10x0.3,5x5x0.3   subl.   1 side epi polished Al2O3 Hexagonal 2030 3.97 14% atori. 7.5 CZ Ø50 x 0.33 a=4.758 Å   Ø25 x 0.50 c=12.99 Å Ø2” 10x10x0.5     1 or 2 sides epi polished LiAlO2 Tetragonal 1900 ~ 2.62 1.4 % atori. / CZ 10x10x0.5 a=5.17 Å Ø20 mm 1 or 2 sides epi [...]

2018-07-10 Weiterlesen ...

Siliziumkarbidliste

Silicon Carbide List   4″ 4H Silicon Carbide Item No. Type Orientation Thickness   Grade Micropipe Density Surface Usable area 　  N-Type  S4H-100-N-SIC-350-A 4″ 4H-N 0°/4°±0.5° 350±25um A  <10/cm2 P/P >90% S4H-100-N-SIC-350-B 4″ 4H-N 0°/4°±0.5° 350±25um B < 30/cm2 P/P >85% S4H-100-N-SIC-350-D 4″ 4H-N 0°/4°±0.5° 350±25um D  <100/cm2 P/P >75% S4H-100-N-SIC-370-L 4″ 4H-N 0°/4°±0.5° 370±25um D * L/L >75% S4H-100-N-SIC-440-AC 4″ 4H-N 0°/4°±0.5° 440±25um D * As-cut >75% S4H-100-N-SIC-C0510-AC-D 4″ 4H-N 0°/4°±0.5° 5~10mm D  <100/cm2 As-cut * S4H-100-N-SIC-C1015-AC-C 4″ 4H-N 0°/4°±0.5° 5~10mm C  <50/cm2 As-cut * 3″ 4H Silicon Carbide Item No. Type Orientation Thickness   Grade Micropipe Density Surface Usable area 　          N-Type  S4H-76-N-SIC-350-A 3″ 4H-N 0°/4°±0.5° 350±25um A  <10/cm2 P/P >90% S4H-76-N-SIC-350-B 3″ 4H-N 0°/4°±0.5° 350±25um B < 30/cm2 P/P >85% S4H-76-N-SIC-350-D 3″ 4H-N 0°/4°±0.5° 350±25um D  <100/cm2 P/P >75% S4H-76-N-SIC-370-L 3″ 4H-N 0°/4°±0.5° 370±25um D * L/L >75% S4H-76-N-SIC-410-AC 3″ 4H-N 0°/4°±0.5° 410±25um D * As-cut >75% S4H-76-N-SIC-C0510-AC-D 3″ 4H-N 0°/4°±0.5° 5~10mm D  <100/cm2 As-cut * S4H-76-N-SIC-C1015-AC-D 3″ 4H-N 0°/4°±0.5° 10~15mm D  <100/cm2 As-cut * S4H-76-N-SIC-C0510-AC-C 3″ 4H-N 0°/4°±0.5° 5~10mm C  <50/cm2 As-cut * S4H-76-N-SIC-C1015-AC-C 3″ 4H-N 0°/4°±0.5° 10~15mm C  <50/cm2 As-cut * 　 SEMI-INSULATING  S4H-76-SI-SIC-350-A 3″ 4H-SI 0°/4°±0.5° 350±25um A  <10/cm2 P/P >90% S4H-76-SI-SIC-350-B 3″ 4H-SI 0°/4°±0.5° 350±25um B < 30/cm2 P/P >85% S4H-76-SI-SIC-350-D 3″ 4H-SI 0°/4°±0.5° 350±25um D  <100/cm2 P/P >75% 2″ 4H Silicon Carbide Item No. Type Orientation Thickness   Grade Micropipe Density Surface Usable area 　 N-Type  S4H-51-N-SIC-330-A 2″ 4H-N 0°/4°±0.5° 330±25um A  <10/cm2 C/P >90% S4H-51-N-SIC-330-B 2″ 4H-N 0°/4°±0.5° 330±25um B < 30/cm2 C/P >85% S4H-51-N-SIC-330-D 2″ 4H-N 0°/4°±0.5° 330±25um D  <100/cm2 C/P >75% S4H-51-N-SIC-370-L 2″ 4H-N 0°/4°±0.5° 370±25um D * L/L >75% S4H-51-N-SIC-410-AC 2″ 4H-N 0°/4°±0.5° 410±25um D * As-cut >75% S4H-51-N-SIC-C0510-AC-D 2″ 4H-N 0°/4°±0.5° 5~10mm D  <100/cm2 As-cut * S4H-51-N-SIC-C1015-AC-D 2″ 4H-N 0°/4°±0.5° 10~15mm D  <100/cm2 As-cut * S4H-51-N-SIC-C0510-AC-C 2″ 4H-N 0°/4°±0.5° 5~10mm C  <50/cm2 As-cut * S4H-51-N-SIC-C1015-AC-C 2″ 4H-N 0°/4°±0.5° 10~15mm C  <50/cm2 As-cut * 2″ 6H Silicon Carbide Item No. Type Orientation Thickness   Grade Micropipe Density Surface Usable area 　 N-Type  S6H-51-N-SIC-330-A 2″ 6H-N 0°/4°±0.5° 330±25um A  <10/cm2 C/P >90% S6H-51-N-SIC-330-B 2″ 6H-N 0°/4°±0.5° 330±25um B < 30/cm2 C/P >85% S6H-51-N-SIC-330-D 2″ 6H-N 0°/4°±0.5° 330±25um D  <100/cm2 C/P >75% S6H-51-N-SIC-370-L 2″ 6H-N 0°/4°±0.5° 370±25um D * L/L >75% S6H-51-N-SIC-410-AC 2″ 6H-N 0°/4°±0.5° 410±25um D * As-cut >75% S6H-51-N-SIC-C0510-AC-D 2″ 6H-N 0°/4°±0.5° 5~10mm D  <100/cm2 As-cut * S6H-51-N-SIC-C1015-AC-D 2″ 6H-N 0°/4°±0.5° 10~15mm D  <100/cm2 As-cut * S6H-51-N-SIC-C0510-AC-C 2″ 6H-N 0°/4°±0.5° 5~10mm C  <50/cm2 As-cut * S6H-51-N-SIC-C1015-AC-C 2″ 6H-N 0°/4°±0.5° 10~15mm C  <50/cm2 As-cut * 　 SEMI-INSULATING  S6H-51-SI-SIC-330-A 2″ 6H-SI 0°/4°±0.5° 330±25um A  <10/cm2 C/P >90% S6H-51-SI-SIC-330-B 2″ 6H-SI 0°/4°±0.5° 330±25um B < 30/cm2 C/P >85% S6H-51-SI-SIC-330-D 2″ 6H-SI 0°/4°±0.5° 330±25um D  <100/cm2 C/P >75% S6H-51-SI-SIC-370-L 2″ 6H-SI 0°/4°±0.5° 370±25um D * L/L >75% S6H-51-SI-SIC-410-AC 2″ 6H-SI 0°/4°±0.5° 410±25um D * As-cut >75% S6H-51-SI-SIC-C0510-AC-D 2″ 6H-SI 0°/4°±0.5° 5~10mm D  <100/cm2 As-cut * S6H-51-SI-SIC-C1015-AC-D 2″ 6H-SI 0°/4°±0.5° 10~15mm D  <100/cm2 As-cut * Please see below sub-catalogue: 6H n type SiC 4H N Type SiC 4H Semi-insulating SiC SiC Ingots Lapped Wafers Polishing Wafer As a SiC wafer supplier,we offer Silicon carbide list for your reference, if you need price detail, please contact our sales team. Note: *** As manufacturer, we also accept small quantity for researcher or foundry. ***Delivery time: it depends on stock we have, if we have stock, we can ship to you soon.  

2018-05-23 Weiterlesen ...