GaP-Wafer

PAM-XIAMEN offers Compound Semiconductor GaP wafer – gallium phosphide wafer which is grown by LEC(Liquid Encapsulated Czochralski) as epi-ready or mechanical grade with n type, p type or semi-insulating in different orientation(111)or(100).
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PAM-XIAMEN offers Compound Semiconductor GaP wafer – gallium phosphide wafer which are grown by LEC(Liquid Encapsulated Czochralski) as epi-ready or mechanical grade with n type, p type or semi-insulating in different orientation(111) or (100).

Gallium phosphide (GaP), a phosphide of gallium, is a compound semiconductor material with an indirect band gap of 2.26eV(300K). The polycrystalline material has the appearance of pale orange pieces. Undoped single gallium phosphide crystal wafers appear clear orange, but strongly doped wafers appear darker due to free-carrier absorption. It is odorless and insoluble in water. Gallium phosphide wafers by doping sulfur or tellurium can produce n-type semiconductors. Zinc is used as a dopant for the p-type semiconductor. Gallium phosphide wafer has applications in optical systems. Its refractive index is between 4.30 at 262 nm (UV), 3.45 at 550 nm (green) and 3.19 at 840 nm (IR). Gallium phosphide single crystal is the main substrate material for the preparation of red, green, yellow and orange visible light LEDs.

Specs von GaP-Wafer und Substrat
Conducion Typ N-Typ
Dotierstoff S dotierte
Wafer-Durchmesser 50,8 +/- 0,5 mm
Kristallorientierung (111) +/- 0,5 °
Wohnung Ausrichtung 111
Wohnung Länge 17,5 +/- 2 mm
Ladungsträgerkonzentration (2-7) x10 ^ 7 / cm3
Der spezifische Widerstand bei RT 0.05-0.4ohm.cm
Mobilität 100 cm² / Vsek
Ätzgrübchendichte 3 * 10 ^ 5 / cm²
Laserbeschriftung auf Anfrage
suface finish P / E
Dicke 250 +/- 20 um
Epi Bereit Ja
Paket Single-Wafer-Behälter oder Kassette
 
In order to reduce GaP wafer defects, the solute synthesis diffusion method can be used for crystal growth, but the growth rate is slow and it is difficult to obtain large crystals. Currently, epitaxially grown films are mostly used in gallium phosphide device fabrication.

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