Due to its excellent electrical, thermal, and radiation resistance, silicon carbide has become a potential material for applications in high-frequency, high-power, and strong radiation environments. MOS capacitors are an important means of studying semiconductor surfaces and interfaces, as well as the basic structure of [...]
2023-03-17meta-author
PAM XIAMEN offers CeO2 Epi-thin film on YSZ Alloy.
CeO2 Film (40 nm one side) on YSZ <100> 10x10x0.5 mm
CeO2 Film (40 nm one side) on YSZ <110> 10x10x0.5 mm.
CeO2 Film (40 nm one side) on YSZ, <111>10x10x0.5 mm, 1sp
Due to [...]
2019-04-26meta-author
AX-type defects in zinc-doped GaAs(1−x)P(x) on GaAs
GaAsP alloys are potential candidates for ∼ 1.5 to 1.8 eV photovoltaic converters in multijunction solar cells. We use thermally stimulated capacitance, deep level transient spectroscopy, and photocapacitance to characterize defects in p-type GaAs0.83P0.17 and GaAs0.72P0.28 grown lattice-mismatched [...]
2012-12-04meta-author
Silicon Carbide Circuits on the Way
Although silicon is the semiconducting material of choice in the majority of applications in electronics, its performance is poor where large currents at high voltages have to be controlled. For about 50 years, scientists have been eyeing silicon carbide [...]
PAM XIAMEN offers 2″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
p-type Si:B
[100]
2″
280
P/E
0.5-0.6
Prime, NO Flats
p-type Si:B
[100]
2″
280
P/E
0.08-0.10
SEMI Prime
p-type Si:B
[100]
2″
1000
P/E
0.073-0.090
SEMI Prime,
p-type Si:B
[100]
2″
250
P/P
0.02-0.04
SEMI Prime
p-type Si:B
[100]
2″
225
P/P
0.015-0.020
SEMI Prime
p-type Si:B
[100]
2″
1000
P/P
0.015-0.045
SEMI Prime,
p-type Si:B
[100]
2″
280
P/P
0.008-0.095
SEMI Prime
p-type Si:B
[100-4°]
2″
300
P/P
0.003-0.004
SEMI Prime,
p-type Si:B
[100-6° towards[110]]
2″
300
P/E
0.0026-0.0029
SEMI Prime
p-type Si:B
[100]
2″
300
P/E
0.0023-0.0029
SEMI Prime
p-type Si:B
[100]
2″
250
P/P
0.001-0.006
SEMI Prime,
p-type Si:B
[100-6° towards[110]]
2″
275
P/E
0.001-0.005
SEMI Prime,
p-type Si:B
[100]
2″
280
P/E
0.001-0.005
SEMI Prime,
p-type Si:B
[100]
2″
300
P/E
0.001-0.005
Prime, NO Flats
p-type Si:B
[100]
2″
500
P/P
0.001-0.005
SEMI Prime,
p-type Si:B
[111-10° towards[112]]
2″
300
P/E
20-25
SEMI Prime
p-type Si:B
[111]
2″
380
P/P
10-20
SEMI Prime
p-type Si:B
[111-2° towards[112]]
2″
1000
P/P
10-30
SEMI Prime
p-type Si:B
[111]
2″
500
P/P
2.4-2.6
SEMI Prime
p-type [...]
2019-03-07meta-author
Ternary compound semiconductor material InxGa1-xAs is a mixed solid solution formed by GaAs and InAs. It is a sphalerite structure and belongs to direct bandgap semiconductor. Its energy band changes with the change of alloy and can be used to make various photoelectric devices, [...]
2022-10-19meta-author