PAM XIAMEN offers 150mm Si wafers. Please send us email at sales@powerwaywafer.com if you need other specs and quantity.
Item
Dia
Type
Dopant
Orien
Res
(Ohm-cm)
Thick
(um)
Polish
Grade
Description
PAM2716
150mm
N/A
650um
SSP
MECH
Low cost Si Wafer great for spin coating.
PAM2717
150mm
P
B
<100>
0-10
620 um
SSP
Test
Test Grade Silicon great for wafer processing studies.
PAM2718
150mm
N
<100>
0-100
625um
SSP
Test
6″ diameter (150mm), silicon wafers, N-type.
PAM2719
150mm
P
B
<100>
0.006-0.012
525um
SSP
Test
With Oxide Back Seal
PAM2720
150mm
P
B
<100>
1-100
500um
SSP
Test
2 SEMI-STD FLATS WHERE [...]
2019-02-20Meta-Autor
A phenomenon commonly encountered in grinding of silicon wafers is the grinding marks, which are difficult to remove by subsequent polishing process, and have been a great obstacle to the manufacture of silicon wafers with higher flatness. In this paper, the grinding marks formation [...]
PAM XIAMEN offers 4″ Silicon Wafer.
Diameter
Type
Dopant
Growth
method
Orientation
Resistivity
Thickness
Surface
Grade
100
P
Boron
CZ
-111
1-20
450-500
P/P
PRIME
100
P
Boron
CZ
-111
1-20
500-550
P/E
PRIME
100
P
Boron
CZ
-110
1-20
450-500
P/P
PRIME
100
P
Boron
CZ
-110
1-20
500-550
P/E
PRIME
100
Any
Any
CZ
Any
Any
350-600
P/E
TEST
100
Undoped
VGF
-100
>1E7
500-600
P/P
100
Undoped
VGF
-100
>1E7
500-600
P/P
100
N
Si
VGF
-100
600-650
P/E
PRIME
100
P
Zn
VGF
(100) off 2 deg twd <110>
0.01
375-425
P/E
epi
100
P
Zn
VGF
-100
600-650
P/E
PRIME
100
Si
Undoped
VGF
-100
>1E7
600-650
P/E
PRIME
100
Si
Undoped
VGF
-100
10000000
610-660
P/P
EPI
100
Undoped
CZ
-100
>30
450-500
P/P
EPI
100
Undoped
CZ
-100
>30
500-550
P/E
EPI
100
N
Sb
CZ
(100)-9
<.4
150-200
P/E
EPI
100
N
Sb
CZ
-100
.005-.02
450-500
P/P
EPI
100
N
Sb
CZ
-100
.005-.02
500-550
P/E
EPI
100
P
Ga
CZ
-100
.01-.04
450-500
P/P
EPI
100
P
Ga
CZ
-100
.01-.04
500-550
P/E
EPI
100
N
Si
VGF
-100
600-650
P/E
PRIME
100
Si
Fe
VGF
-100
5000000
600-650
P/E
PRIME
100
Single Wafer Shipper
ePak
Holds1Wafer
PRIME
100
Shipping Cassette
ePak
Holds25Wafers
Clean Room
101.6
N
Phos
CZ
-100
1-20
300-350
P/P
101.6
N
Phos
CZ
-100
1-20
350-400
P/E
101.6
P
Boron
CZ
-100
1-20
300-350
P/P
101.6
P
Boron
CZ
-100
1-20
350-400
P/E
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material [...]
2019-03-04Meta-Autor
PAM-XIAMEN, one of leading GaN substrate manufacturers, offers 10*10mm2 N-Type Freestanding GaN Substrate. To get more specific information please see the table below:
1. N-Type Freestanding GaN Substrate Specification
Item
PAM-FS-GAN-50-N
Dimension
10 x 10.5 mm2
Thickness
380+/-50um
Orientation
C plane (0001) off angle toward M-axis 0.35 ±0.15°
Conduction Type
N-type / Si Doped
Resistivity (300K)
< 0.05 Ω·cm
TTV
≤ 10 µm
BOW
BOW ≤ 10 µm
Surface Roughness:
Front side: Ra<0.2nm, epi-ready;
Back side: Fine Ground or polished.
Dislocation Density
≤5x 106 cm-2 (calculated by CL)*
Macro Defect Density
0 cm-2
Useable Area
> 90% (edge exclusion)
Package
each in single wafer container, under nitrogen atmosphere, packed in [...]
2020-08-17Meta-Autor
PAM XIAMEN offers 8″CZ Prime Silicon Wafer-2
8″ Silicon Wafer
CZ, <111>,
thickness 1.0 mm,
p-type
resistivity 1-80ohm.cm,
warp < 50 um,
single side polished
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2021-03-16Meta-Autor
Silicon carbide epitaxial wafer is a kind of silicon carbide wafer on which a single crystal film (epitaxial layer) with certain requirements and the same crystal as the substrate is grown on the silicon carbide substrate. In practical applications, almost all wide band gap [...]
2020-09-22Meta-Autor