PAM XIAMEN offers 4″ Epitaxial Silicon Wafer. If necessary, we can do SRP (spreading resistance profile) test for you.
Item
Parameter
Spec
Unit
1
Growth Method
CZ
2
Diameter
100+/-0.5
mm
3
Type-Dopant
P- Boron
4
Resistivity
0.002 – 0.003
ohm-cm
5
Resistivity Radial Variation
<10
%
6
Crystal Orientation
<111> 4 +/- 0.5
degree
7
Primary Flat
Orientation
Semi
degree
Length
Semi
mm
8
Secondary Flat
Orientation
Semi
degree
Length
semi
mm
9
Thickness
525 +/- 25
μm
10
TTV
≦10
μm
11
Bow
≦40
μm
12
Warp
≦40
μm
13
Front Surface
polished
14
Backside
etched
—
5000 +/-10% Angstoms SiO2
15
Surface Appearance
no Cratches, haze, edge chips, orange peel, defects,contamination
—
16
Edge [...]
2021-03-16meta-author
We are an expert of semiconductor wafers in semiconductor industry, and we offer technology support and wafers selling for thousands of univerisities and industrial customers by our decades experience, including Cornell University, Stanford Univeristy,Peking University, Shandong Univerity, university of south carolina,Caltech Faraon lab (USA),University of California, Irvine (USA),Singapore MIT Alliance for Research and Technology Centre (SMART),West Virginia University,Purdue Univerity, University of California, Los Angeles,King Abdullah University of Science & Technology,Massachusetts Institute of Technology,University of Houston,University of Wisconsin,University of Science and Technology of China etc.
And now we show one article example as follows, who bought our wafers or service:
Article title:GaN LEDs fabricated using SF6 plasma RIE
Published by:
Wasif Khan ; Xiaopeng Bi ; Bin Fan ; Wen Li
Department of Electrical and [...]
2019-12-02meta-author
PAM-XIAMEN offers silicon ingot with FZ Intrinsic undoped, MCC lifetime (Minority Charge Carrier Lifetime) more than 1000Ωcm.
Silicon Ingot, FZ intrinsic undoped, MCC lifetime
An intrinsic(pure) semiconductor, also called an undoped semiconductor or i-type semiconductor,
is a pure semiconductor without any significant dopant species present. The number of [...]
2019-03-15meta-author
Cadmium zinc telluride (CdZnTe) is now established as a popular choice of sensor for the detection of γ-rays and hard x-rays, leading to its adoption in security, medical and scientific applications. There are still many technical challenges involving the deposition of high-quality, uniform metal contacts [...]
2019-11-26meta-author
Diamond wafers from PAM-XIAMEN are wafer-scale products that are used to tap the huge potential of diamond materials, such as tribological testing, unique nano-scale processing applications and MEMS development. In the current diamond wafer market, there are three grade diamond wafer, Microelectronics Grade diamond wafer, Thermal [...]
2018-07-10meta-author
PAM XIAMEN offers 3″ Silicon EPI Wafers.
Substrate
EPI
Comment
Size
Type
Res
Ωcm
Surf.
Thick
μm
Type
Res
Ωcm
3″Øx381μm
p- Si:B[111]
0.004-0.008
P/E
12.5±2.5
p- Si:B
2.35
n/p/p+
3″Øx381μm
p- Si:B[111]
0.004-0.008
P/E
140±10
n- Si:P
33.6
n/p/p+
3″Øx381μm
n- Si:As[111-4°]
0.001-0.005
P/E
5.5
n- Si:P
0.31 – 0.33
n/n+
3″Øx381μm
n- Si:As[111]
0.001-0.005
P/E
37.5
n- Si:P
0.6±10%
n/n+
3″Øx525μm
n- Si:P[111]
0.001-0.005
P/E
4.5
n- Si:P
1.1 – 1.4
n/n+, Sealed in cassettes of 24 wafers
3″Øx381μm
n- Si:As[111]
0.001-0.005
P/E
5.5
n- Si:P
1.06±10%
n/n+
3″Øx381μm
n- Si:As[111]
0.001-0.005
P/E
11
n- Si:P
17.5±10%
n/n+
3″Øx381μm
n- Si:As[111]
0.001-0.005
P/E
12
n- Si:P
1.7±10%
n/n+
3″Øx381μm
n- Si:As[111]
0.001-0.005
P/E
12
n- Si:P
2.1±10%
n/n+
3″Øx381μm
n- Si:As[111]
0.001-0.005
P/E
12
n- Si:P
1.3±10%
n/n+
3″Øx381μm
n- Si:As[111]
0.001-0.005
P/E
12
n- Si:P
1.8±10%
n/n+
3″Øx381μm
n- Si:As[111]
0.001-0.005
P/E
12
n- Si:P
1.3±10%
n/n+
3″Øx381μm
n- Si:As[111]
0.001-0.005
P/E
12
n- Si:P
16±10%
n/n+
3″Øx381μm
n- Si:As[111]
0.001-0.005
P/E
13
n- Si:P
1.35±10%
n/n+
3″Øx381μm
n- [...]
2019-03-08meta-author