CZT-Sonde (CZT-Detektor mit Vorverstärker)

CZT-Sonde (CZT-Detektor mit Vorverstärker)

PAM-01C1 integrated customized hemispherial electrode CZT detector and low noise charge sensitive preamplifier. It can convert X/γ-ray into exponential decay signal. Working with five-pin cable, high and low power supply, main amplifier，those signals will be direct into multi-channel pulse analyzer and then the energy spectrum will be formed.

CZT probe

1. Specification of CZT Probe

Macht 0,3 W.
Energieversorgung ± 12W
Ausgangsimpedanz 50Ω
Betriebstemperatur -20 ℃ - + 40 ℃
Hochspannung DC [email protected]3CZT
DC + 900 V bei 10 × 10 × 5 mm3CZT
Kristalltyp 10 * 10 * 5 mm3 / 5,5 * 5,5 * 2,75 mm3Asymmetrie CZT Detektor
Signalausgang Exponentielles Abklingsignal, Tr <150 ns
Schnittstelle Fünf-Stift-Stecker
Energiebereich 10KeV (Berylliumfenster) ~ 2,6MeV
Energieauflösung <3% @ 662KeV, 25 ℃
INL (Integrale Nichtlinearität) 10KeV ~ 1,3MeV <0,5%
10KeV ~ 2,6MeV <1,0%
Spitzendrift 0 ℃ ~ 40 ℃ <0,05% / l
-20 ~ 0 ~ <0,2% / l
Spitzendrift unter 8h <0,2%
Dimension 30,5 × 73 mm2
Gewicht 55g

 

2. Spectrum of CZT Detector with Preamplifier

 

 

 

 

 

 

 

3. Features of CZT Detector with Preamplifier

Portable & user friendly
Raumtemperatur arbeiten
Hohe Energieauflösung
Schnelle Antwort
Long-time stability

4. Applications of CdZnTe Probe

Homeland security
Terrorismusbekämpfung
Erfassung des Energiespektrums
Nuklearwissenschaft & Technologie
Fehlererkennung
Erkennung der Lebensmittelsicherheit
Umweltüberwachung
Medical diagnosis

Powerwaywafer

Für weitere Informationen kontaktieren Sie uns bitte per E-Mail unter[email protected] und [email protected].

2019-04-23

Teile diesen Beitrag

Verbunden Beiträge

Siliziumwafer spalten

PAM XIAMEN offers Cleaving Silicon Wafer, which is cut by multi-wire cutting technology. Here is the cleaving silicon wafer specs: Cleaving (100) silicon wafers Cleaving (111) silicon wafers Here comes a question: how to cleave a silicon wafer? At present, the silicon wafer cleaving technology mostly adopts the [...]

2019-02-22Meta-Autor
2″ FZ Silicon Ingot with Diameter 50mm

PAM XIAMEN offers 2″ FZ Silicon Ingot with Diameter 50mm Silicon ingot, per SEMI, G Ø50mm FZ n-type Si:P[100]±2.0°, Ro=(1,500-7,000)Ohmcm Ground Ingot, NO Flats, MCC Lifetime>1000µs, Oxygen<1E16/cc, Carbon<1E16/cc, Adequately packed, CofC: present. For more information, send us email at [email protected] and [email protected]

2020-05-27Meta-Autor
LiF crystal

PAM XIAMEN offers LiF crystal. LiF (100) 10x10x1.0mm, 1SP LiF (100) 10x10x1.0mm, 2SP LiF (111) 10x10x1.0mm, 1SP LiF (111) 10x10x1.0mm, 2SP LiF (110) 10x10x1.0mm, 1SP We also can offer LiF polycrystal (PAM161011-LIF): Diameter=15mm Length=25mm Purity>99.99% For more information, please contact us email at [email protected] and [email protected] Found in [...]

2019-05-08Meta-Autor
WS2 Crystal

PAM XIAMEN offers WS2 Crystal. WS2 (Tungsten Disulfide) is the first material which was found to form inorganic nanotubes, in 1992. This ability is related to the layered structure of WS2. WS2 nanotubes have been investigated as reinforcing agents to improve the mechanical properties [...]

2019-05-20Meta-Autor
Metallverunreinigungsgehalt in mono- und polykristallinen Siliziumkristallen identifiziert

The impurity elements in crystalline silicon materials mainly include non-metallic impurities such as carbon, oxygen, boron, and phosphorus, and metal impurity such as iron, aluminum, copper, nickel, and titanium. Metal impurities generally exist in interstitial states, substitution states, complexes or precipitations in crystalline silicon, [...]

2022-09-27Meta-Autor
8″CZ Prime Silicon Wafer

PAM XIAMEN offers 8″CZ Prime Silicon Wafer 8 inch prime silicon wafer Orientation CZ <111> Diameter 200mm Thickness 1±0.025mm Total Thickness Variation ≤25μm Warp ≤50μm Surface Sigle -side Polished P type Resistivity 1-80Ωcm For more information, send us email at [email protected] and [email protected]

2020-06-10Meta-Autor