Epi-Wafer für Laserdiode

Epi Wafer für Laserdiode

GaAs based LD epitaxy wafer, which can generate stimulate emission, is widely used for fabricating laser diode since the superior GaAs epitaxial wafer properties make the device a low energy consumption, high efficiency, long lifetime and etc. In addition to gallium arsenide LD epi wafer, commonly used semiconductor materials are cadmium sulfide (CdS), indium phosphide (InP), and zinc sulfide (ZnS).

  • Beschreibung

Produktbeschreibung

Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN), a LD epitaxial wafer supplier, focuses on the GaAs and InP based laser diode epi wafers grown by MOCVD reactors for fiber-optic communication, industrial application, and special-purpose usage. PAM-XIAMEN can offer LD epitaxy wafer based on GaAs substrate for various fields, like VCSEL, infrared, photo-detector and etc. More details about the LD epitaxy wafer material, please refer to the table below:

Substratmaterial Materialfähigkeit Wellenlänge Anwendung
GaAs GaAs / GalnP / AlGaInP / GaInP 635nm  
GaAs-basierter Epi-Wafer 650 nm Oberflächenemittierender Laser mit vertikalem Hohlraum (VCSEL)
RCLED
GaAs / GalnP / AlGaInP / GaInP 660 nm  
GaAs / AlGaAs / GalnP / AlGaAs / GaAs 703 nm  
GaAs / GalnP / AlGaInP / GaInP 780 nm  
GaAs / GalnP / AlGaInP / GaInP 785 nm  
GaAs-basierter Epi-Wafer 800-1064 nm Infrarot-LD
GaAs / GalnP / AlGaInP / GaInP 808 nm Infrarot-LD
GaAs-basierter Epi-Wafer 850nm Oberflächenemittierender Laser mit vertikalem Hohlraum (VCSEL)
RCLED
GaAs-basierter Epi-Wafer <870 nm Fotodetektor
GaAs-basierter Epi-Wafer 850-1100 nm Oberflächenemittierender Laser mit vertikalem Hohlraum (VCSEL)
RCLED
GaAs / AlGaAs / GaInAs / AlGaAs / GaAs 905nm  
GaAs / AlGaAs / InGaAs / AlGaAs / GaAs 950 nm  
GaAs-basierter Epi-Wafer 980nm Infrarot-LD
InP-basierter Epi-Wafer 1250-1600 nm Lawinen-Fotodetektor
GaAs-basierter Epi-Wafer 1250-1600 nm /> 2,0 um
(InGaAs Absorptionsschicht)
Fotodetektor
GaAs-basierter Epi-Wafer 1250-1600 nm / <1,4 um
(InGaAsP-Absorptionsschicht)
Fotodetektor
InP-basierter Epi-Wafer 1270-1630nm DFB-Laser
GaAsP / GaAs / GaAs-Substrat 1300nm  
InP-basierter Epi-Wafer 1310nm FP-Laser
GaAsP / GaAs / GaAs-Substrat 1550 nm FP-Laser
  1654nm  
InP-basierter Epi-Wafer 1900nm FP-Laser
  2004nm  

 

About LD Epitaxy Wafer Applications & Market

The applications of GaAs based LD epitaxy wafer in the laser field can be divided into VCSELs and non-VCSELs. The current GaAs based LD epitaxy applications mainly lies in VCSELs. VCSEL (Vertical Cavity Surface Emitting Laser), based on GaAs materials, is mainly used for face recognition. It is expected to have a high growth rate in the future. EEL (Edge Emitting Laser) is a non-VCSEL device, mainly used in the field of automotive lidar, and the demand is expected to increase with the expansion of the driverless car market.

The GaAs substrate used in the laser field requires high technical indicators, and the unit epitaxial wafer price is significantly higher than that of other fields. The future LD epitaxial market space can be expected. Laser applications are the most sensitive to dislocation density. There is a high requirement for the GaAs substrate materials in laser applications. Therefore, the higher requirement is put forward on LD epitaxial wafer manufacturers and LD epitaxial wafer process. At present, the near-infrared band (760~1060 nm) semiconductor laser based on GaAs substrate has the most mature development and the most widespread application, and it has already been commercialized.

Please see below detail specification of LD epitaxy wafer:

VCSEL Laser Wafer Chip

VCSEL Laser Epi Wafer

703nm Laserdioden-Epi-Wafer

808nm Laserdiode epi Wafer-1

780 nm Laserdioden-Epi-Wafer

650-nm-Laserdioden-Epi-Wafer

785 nm Laserdioden-Epi-Wafer

808nm Laserdioden-Epi-Wafer-2

850 nm Laserdioden-Epi-Wafer

905nm Laserdioden-Epi-Wafer

940nm laser diode epi wafer

950 nm Laserdioden-Epi-Wafer

1550 nm Laserdioden-Epi-Wafer

1654nm Laserdioden-Epi-Wafer

2004nm Laserdioden-Epi-Wafer

GaAs Epitaxy with Thick Growth

GaAs based Epi Structure MOCVD Grown for Light Emitter

Narrow InGaAsP Quantum Well Grown on InP Wafer

InAs-Quantenpunktschichten auf InP-Substrat

 

Einzelemitter-Chips

Einzelemitter-LD-Chip 755 nm bei 8 W.

Single-Emitter-LD Chip 808nm @ 8W

Einzelemitter-LD-Chip 808 nm bei 10 W.

Einzelemitter-LD-Chip 830 nm bei 2 W.

Einzelemitter-LD-Chip 880 nm bei 8 W.

Einzelemitter-LD-Chip 900 + nm bei 10 W.

Einzelemitter-LD-Chip 900 + nm bei 15 W.

Einzelemitter-LD-Chip 905 nm bei 25 W.

Einzelemitter-LD-Chip 1470 nm bei 3 W.

PAM XIAMEN bietet 1470 / 1550nm Hochleistungslaser-Einzelchip wie folgt an:

LD Bare Bar

LD Bare Bar für 780nm @ Hohlraum 2.5mm

LD Bare Bar für 808nm @ Hohlraum 2mm

LD Bare Bar für 808nm @ Hohlraum 1,5mm

LD Bare Bar für 880 nm @ Hohlraum 2 mm

LD Bare Bar für 940nm @ Hohlraum 2mm

LD Bare Bar für 940nm @ Hohlraum 3mm

LD Bare Bar für 940nm @ Hohlraum 4mm

LD Bare Bar für 940nm @ Hohlraum 2mm

LD Bare Bar für 976nm @ Hohlraum 4mm

LD Bare Bar für 1470nm @ Hohlraum 2mm

LD Bare Bar für 1550nm @ Hohlraum 2mm