Ge Wafer Lieferant

Ge Wafer Lieferant

Ge Wafersubstrat-Germanium
No. Material Orientierung. Durchmesser Dicke Polnisch Der spezifische Widerstand Typ Dotierstoff Prime Wohnung EPD Ra
(mm) (μm) Ω · cm Orientierung / cm2
1-100 Ge (100) 50.8 500 ± 25 SSP 0.0138-0.02 P / Ga (110) ≤5000 N / A
1-100 Ge (100) 50.8 500 SSP ≥30 N / undotiert N / A N / A <5A
1-100 Ge (100) 50.8 500 SSP 58.4-63.4 N / undotiert N / A N / A N / A
1-100 Ge (100) 50.8 500 SSP 0.1-1 P / Ga N / A N / A N / A
1-100 Ge (100) 50.8 500 SSP 0.1-0.05 P / Ga N / A N / A N / A
1-100 Ge (100) 50.8 1000 DSP >30 N / A (110) N / A N / A
1-100 Ge (100) 50.8 2000 SSP N / A N / A N / A N / A N / A
1-100 Ge (100) 50.8 4000 SSP N / A N / A N / A N / A N / A
1-100 Ge (111) / (110) 50.8 200000 N / A 5-20 N / A N / A N / A N / A
1-100 Ge (100) 50.8 400 SSP <0.4 N / A N / A N / A N / A
1-100 Ge (100) / (111) 50.8 4000 ± 10 DSP N / A N / A N / A N / A N / A
1-100 Ge (100) 50.8 350 SSP 1-10 P / Ga (110) ≤5000 N / A
PAMP20295 Ge (100) 50.8 500 ± 25 SSP 2-10 P / Ga (110) ≤5000 N / A
1-100 Ge (100) 50.8 500 ± 25 SSP 0.3-3 Ns b (110) ≤5000 N / A
1-100 Ge (100) 50.8 500 ± 25 SSP 0.3-3 P / Ga (110) ≤5000 N / A
1-100 Ge (111) 60 1000 Wie geschnitten >30 N / A (110) <3000 N / A
1-100 Ge (100) 100 N / A SSP <0.019 P / Ga (110) <500 N / A
1-100 Ge (100) 100 1000 ± 25 SSP ≥30 N / undotiert N / A N / A N / A
1-100 Ge (100) aus 6 ° oder aus 9 ° 100 500 SSP 0.01-0.05 P / Ga N / A N / A N / A
1-100 Ge (100) 100 500 SSP 0.01-0.05 P / Ga N / A N / A N / A
1-100 Ge (100) 100 500 DSP 0.01-0.05 P / Ga N / A N / A N / A
1-100 Ge (100) 100 500 SSP <0.01 P / Ga N / A N / A N / A
1-100 Ge (100) 100 500 DSP <0.01 P / Ga N / A N / A N / A
1-100 Ge (100) 100 500 SSP ≥35 P / Ga N / A N / A N / A
1-100 Ge (100) 100 500 DSP ≥35 P / Ga N / A N / A N / A
1-100 Ge (100) 100 500 SSP 0.1-0.05 P / Ga N / A N / A <5A
1-100 Ge (100) 100 500 DSP 0.1-0.05 P / Ga N / A N / A <5A
1-100 Ge (100) 6 ° aus (111) 100 185 ± 15 DSP 0.01-0.05 N / A (110) ≤5000 <5A
1-100 Ge (100) 6 ° aus (110) 100 525 ± 25 SSP 0.01-0.04 N / A N / A N / A N / A
1-100 Ge (100) 100 N / A N / A N / A N / A N / A N / A N / A
1-100 Ge (100) 100 1000 ± 15 SSP ≥30 N / A (110) ≤5000 N / A
1-100 Ge (100) 100 750 ± 25 SSP ≥30 N / A (110) ≤5000 N / A
1-100 Ge (100) 100 500 ± 25 SSP 10-30 N / A N / A N / A N / A
1-100 Ge (100) / (111) 100 160 DSP 0.05-0.1 P / Ga N / A <500 N / A
1-100 Ge (100) / (111) 100 160 DSP 0.05-0.1 P / Ga N / A <4000 N / A
1-100 Ge (100) / (111) 100 160 DSP 0.05-0.1 Ns b N / A <500 N / A
1-100 Ge (100) / (111) 100 160 DSP 0.05-0.1 Ns b N / A <4000 N / A
1-100 Ge (100) / (111) 100 190 DSP 0.05-0.1 P / Ga N / A <500 N / A
1-100 Ge (100) / (111) 100 190 DSP 0.05-0.1 P / Ga N / A <4000 N / A
1-100 Ge (111) 100 500 ± 25 SSP <0.4 Ns b N / A N / A N / A
1-100 Ge (100) 6 ° in Richtung (111) A abgeschnitten 100 175 ± 25 SSP 0.003-0.009 P / Ga (0-1-1) (0-11) <100 N / A
PAM210802 Ge (100) 100 175 DSP <0.02 P N / A N / A N / A
1-100 Ge (310) ± 0,1 ° 100 200 ± 15 DSP >20 N / A N / A N / A N / A
1-100 Ge (111) 150 600-700 N / A >30 N / A (110) N / A N / A

 

Germanium wafer list here is for your reference, if you need price detail, please contact our sales team. As a Ge wafer supplier, we also offer bulk Ge wafer with sepecial orientation. Take the Ge(310) for example:

Ge wafers, PAM210611-GE

Size: 4”diameter

Intrinsic undoped

Orientation：（310）+/-0.1deg.

Resistivity:>30 ohm.cm

TTV<3um

BOW<10um

WARP<10um

SEMI Prime grade

Double side polished

One SEMI Flat

Sealed in Individual Wafer

FAQ：

Q: According to your comment below, orientation <111> is undoped, is there a difference with N type germanium wafer in transmission ?

“Normally few to use (111) on this resistivity (5-40 ohm.cm), (111)undoped(it is resistivity>40 ohm.cm) is much popular for optical application.”

A: Transmission of (111)undoped Ge wafer is slight better than n type one.

Hinweis:
*** As manufacturer, we also accept small quantity for researcher or foundry.

***Delivery time: it depends on stock we have, if we have stock, we can ship to you soon.

***Applications: we offer Ge wafers for various applications, like optics, epi-growth, solar cell, synchronization of IR and visible pulses in pump-probe setup and so on. Tell us your application, we will suggest you the most suitable wafer specification.

*** For solar cell application, normally user will choose Ge wafer with (100) off 6°or off 9°in 175um+/-25um thickness,EPD<500/cm2 or 5000/cm2.

Für weitere Informationen kontaktieren Sie uns bitte per E-Mail untervictorchan@powerwaywafer.com und powerwaymaterial@gmail.com.

2018-05-23

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