PAM-XIAMEN offers InGaAs APD wafers with high performance. InGaAs avalanche photo diodes(InGaAs APD) are highly regarded for its low noise, higher bandwidth, and spectral response extended to 1700 nm. It is available for 1550nm wavelength after optimizing and very suitable for use in eye-safe laser ranging systems. The specifications and parameters of InGaAs APD wafers are as follows:
PAM-210331-INGAAS-APD
Item 1:
Layer | Material | Thickness (μm) | Deviation | concentration (cm-3) | Deviation | Test | Note |
9 | U-1.05μm InGaAsP | – | ±10% | – | ±20% | ||
8 | N-InP | 2.5 | – | 5E+15 | ±20% | C-V | On test wafer |
7 | N-InP | – | ±0.01 | – | – | C-V | On test wafer |
6 | N-1.05μm InGaAsP | 0.03 | – | – | – | – | – |
5 | N-1.25μm InGaAsP | – | ±10% | – | – | – | – |
4 | N-1.45μm InGaAsP | – | ±10% | 2E+16 | – | – | – |
3 | N-InGaAs | – | ±0.01 | – | ±10% | – | – |
2 | U-InGaAs | 2.5 | – | < 1E+15 | DCXD &C-V | On epiwafer & test wafer | |
1 | N-InP | – | ±10% | – | ±20% | C-V | On test wafer |
0 | N-InP Substrate | 350±25 | – | S-doped >3E+18 | – | – | 2″ wafer |
# | Lattice Mismatch | <±100ppm | – | – | – | DCXD | Test on center of epiwafer |
Item 2:
Layer | Material | Thickness (μm) | Deviation | concentration (cm-3) | Deviation | Test | Note |
9 | U-1.05μm InGaAsP | 0.1 | ±10% | – | ±20% | – | – |
8 | N-InP | – | ±0.12 | – | ±20% | C-V | On test wafer |
7 | N-InP | 0.2 | – | – | – | C-V | On test wafer |
6 | N-1.05μm InGaAsP | – | – | 2E+16 | – | – | – |
5 | N-1.25μm InGaAsP | – | ±10% | – | – | – | – |
4 | N-1.45μm InGaAsP | 0.03 | ±10% | – | – | – | – |
3 | N-InGaAs | 0.1 | – | 1E+16 | ±10% | – | – |
2 | U-InGaAs | – | ±10% | – | – | DCXD &C-V | On epiwafer & test wafer |
1 | N-InP | 0.5 | – | – | ±20% | C-V | On test wafer |
0 | N-InP Substrate | 350±25 | – | S-doped >3E+18 | – | – | 2″ wafer |
# | Lattice Mismatch | <±100ppm | – | – | – | DCXD | Test on center of epiwafer |
Item 3:
Layer | Material | Thickness (μm) | Deviation | concentration (cm-3) | Deviation | Test | Note |
9 | U-1.05μm InGaAsP | 0.1 | – | 5E+15 | ±20% | – | – |
8 | N-InP | – | – | – | ±20% | C-V | On test wafer |
7 | N-InP | 0.2 | ±0.01 | – | – | C-V | On test wafer |
6 | N-1.05μm InGaAsP | – | ±10% | – | – | – | – |
5 | N-1.25μm InGaAsP | 0.03 | – | – | – | – | – |
4 | N-1.45μm InGaAsP | – | – | 2E+16 | – | – | – |
3 | N-InGaAs | – | ±0.01 | – | ±10% | – | – |
2 | U-InGaAs | 2.5 | – | < 1E+15 | DCXD &C-V | On epiwafer & test wafer | |
1 | N-InP | – | ±10% | – | ±20% | C-V | On test wafer |
0 | N-InP Substrate | 350±25 | – | S-doped >3E+18 | – | – | 2″ wafer |
# | Lattice Mismatch | <±100ppm | – | – | – | DCXD | Test on center of epiwafer |
Item 4:
PAM221226-1550-APD
Layer | Material | Thickness(um) | Doping(cm3) |
7 | InP | – | undoped(N<1E15) |
6 | InP | 0.2 | – |
5 | GaInAsP | – | – |
4 | GaInAsP | – | – |
3 | GaInAsP | – | – |
2 | Ga0.467In0.5333As | 2 | – |
1 | InP | – | Si doped, n type, 1.3E17 |
N+ InP Substrate |
For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com.