PAM XIAMEN offers LaSrAlO4 Strontium Lanthanum Aluminate Crystal Substrates.
Main Parameters | |
Crystal structure | M4 |
Growth method | Czochralski method |
Unit cell constant | a=3.756Å c=12.63 Å |
Melt point(℃) | 1650 |
Density | 5.92(g/cm3) |
Hardness | 6-6.5(mohs) |
Dielectric constants | ε=16.8 |
Size | 10×3,10×5,10×10,15×15,20×15,20×20 |
Ф15, Ф20,Ф1″,Ф2″, Ф2.6″ | |
Thickness | 0.5mm, 1.0mm |
Polishing | Single or double |
Crystal Orientation | <001> |
redirection precision | ±0.5° |
Redirection the edge: | 2°(special in 1°) |
Angle of crystalline | Special sizes and orientations are available upon request |
Ra: | ≤5Å(5µm×5µm) |
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices.PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.
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