PAM XIAMEN offers 6″FZ Prime Silicon Wafer-1
6″ Si wafer, Diameter 150mm, FZ Gas Dope, SSP, N(100), resistivity 2000-7000Ωcm
PARAMETER
SPECIFICATION
GENERAL CHARACTERISTICS
1
Growth Method
FZ Gas Dope
2
Crystal Orientation
(100)
3
Conductivity Type
n
4
Dopant
Phosphorus
5
Nominal Edge Exclusion
6 mm
ELECTRICAL CHARACTERISTICS
6
Resistivity
2000 – 7000 Ωcm
7
Life Time
>1500 µsec
CHEMICAL CHARACTERISTICS
8
Oxygen Concentrations
< 2xE16 at/cm3
9
Carbon Concentrations
< 2xE16 at/cm3
WAFER PREPARATION CHARACTERISTICS
10
Front Surface Condition
Polished, [...]
2020-04-17meta-author
PAM XIAMEN offers 4″ Diameter Wafer.
4″ Diameter Wafer
Ge N-type 4” ,undoped
Ge Wafer (111) 4″ dia x 0.5 mm, 1SP, N type ( un- doped)
Ge Wafer (100) . Undoped, 4″ dia x 0.5 mm, 1SP
Ge Wafer (100) . Undoped, 4″ [...]
2019-04-25meta-author
Safety Data Sheet of Indium Phosphide Wafer
Product Name:
Indium Phosphide
Date of Issue:
SDS No.:
PAM-001
2017/10/15
1.PRODUCT AND COMPANY IDENTIFICATION
Product Name: Indium Phosphide
Chemical Formula: InP Mol. Wt. 145.79
Manufacturer: Powerway Wafer Co.,Limited
Address:#506B, Henghui Business Center,No.77,Lingxia Nan Road
High Technology Zone, Huli, Xiamen,361000
2.HAZARD IDENTIFICATION
Toxic by inhalation and if swallowed.Gives rise to hazardous [...]
2020-08-04meta-author
Reliability analysis of InGaN Blu-Ray laser diode
The purpose of this work is an in depth reliability analysis of Blu-Ray InGaN laser diodes (LD) submitted to CW stress at different currents and temperatures. During reliability tests, LD devices exhibit a gradual threshold current increase, while [...]
2014-03-03meta-author
InGaN
PAM XIAMEN offers 3″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
p-type Si:B
[100]
3″
5000
P/E
1-30
Prime, NO Flats, Individual cst
p-type Si:B
[100]
3″
300
P/P
0.5-10.0
SEMI Prime, TTV<2μm, Empak cst
p-type Si:B
[100]
3″
315
P/P
0.5-10.0
SEMI Prime, TTV<3μm
p-type Si:B
[100]
3″
3,050 ±50
C/C
>0.5
1Flat, Individual cst (can be ordered singly)
p-type Si:B
[100]
3″
250
P/E
0.15-0.20
SEMI TEST (Scratches), in sealed Empak cassettes of 3 wafers
p-type Si:B
[100]
3″
250
BROKEN
0.15-0.20
Broken wafers, in Epak cst
p-type Si:B
[100]
3″
356
P/P
0.015-0.020
SEMI
p-type Si:B
[100-4° towards[110]] ±0.5°
3″
230
P/E
0.01-0.02
SEMI Prime, TTV<5μm
p-type Si:B
[100]
3″
300
P/E
0.01-0.02
SEMI Prime
p-type [...]
2019-03-06meta-author
PAM XIAMEN offers 6″ silicon ignot.
Silicon ingot, per SEMI,
G 150.7±0.3mmØ,
FZ p-type Si:B[100]±2.0°, Ro=(600-900)Ohmcm, RRV<8%,
Ground Ingot, NO Flats.
NOTE: Oxygen<1E16/cc, Carbon<1E16/cc,
MCC Lifetime>1000µs,
CofC inlude Resisistiviy (9points) and MC Lifetime measurement data, RRV calculations.
For more information, please visit our website: [...]
2019-07-02meta-author