With the driving force of Automotive and Industrial electronics, the strong growth of the silicon carbide (SiC) power semiconductor market is expected to approach $10 billion in the coming years. At the same time, many industry participants have announced corresponding expansion plans to quickly seize market [...]
2024-04-07meta-author
Aluminum nitride (AlN) is a widely used III-V group nitride with a hexagonal wurtzite structure in the field of acoustic electronic devices. It has a large direct bandgap (bandgap of 6.2 eV), is compatible with CMOS technology, and has high thermal conductivity. In addition, [...]
2024-04-03meta-author
Precipitation in low temperature grown GaAs
The precipitation of arsenic in GaAs epitaxially grown at low temperature (LT GaAs) has been studied as a function of the post-growth annealing temperature by three independent methods: transmission electron microscopy (TEM), Raman scattering, and for the first time [...]
PAM-PA01 series are pixel electrode structured detectors based on CZT crystal. They can detect X-ray, γ-ray and imaging. They have a high energy and space resolution.
1. Specification of CZT High Resolution Pixel Detector
Material
CdZnTe
Density
5.8g/cm3
Volume resistance
>1010Ω.cm
Dimensions
10.0×10.0mm2
Thickness
2.0mm
5.0mm
Pixel size
1.1×1.1mm2
Pixel array
8×8
Electrode material
Au
Operation temperature
-20℃-+40℃
Energy range
20KeV~700MeV
20KeV~700MeV
Energy resolution(22℃)
<6%@59.5KeV
<4.5%@122KeV
<3%@662KeV
Defective pixel(DP)
10℃~40℃
Storage temperture
20%-80%
Remarks
Customized available
2. Spectrum of [...]
2019-04-24meta-author
PAM XIAMEN offers 2″ Silicon Wafer.
Diameter
(mm)
Type
Dopant
Growth
method
Orientation
Resistivity
Thickness
Surface
Grade
50.8
N
Phos
FZ
(111) Off 2″ Towards (110)
2k-5k
350-400
P/E
PRIME
50.8
N
Phos
CZ
-100
1-20
10-30
P/P
PRIME
50.8
N
Phos
CZ
-100
1-20
40-60
P/P
PRIME
50.8
N
Phos
CZ
-100
1-20
80-100
P/P
PRIME
50.8
N
Phos
CZ
-100
1-20
140-160
P/P
PRIME
50.8
N
Phos
FZ
-100
>1000
200-500
P/E
PRIME
50.8
N
Phos
FZ
-100
>1000
200-500
P/P
PRIME
50.8
N
Phos
CZ
-100
225-275
P/P
PRIME
50.8
N
Phos
FZ
-100
>3000
225-275
P/P
PRIME
50.8
N
As
CZ
-100
.001-.005
250-300
P/E
PRIME
50.8
N
Sb
CZ
-100
.005-.02
250-300
P/P
PRIME
50.8
N
Phos
FZ
-100
>3000
250-300
P/E
PRIME
50.8
N
Phos
CZ
-100
1-20
250-300
P/E
PRIME
50.8
N
Phos
CZ
-100
1-20
250-300
P/E/DTOx
PRIME
50.8
N
Phos
CZ
-100
1-20
250-300
P/E/Ni
PRIME
50.8
N
Phos
CZ
-100
1-20
250-300
P/E/WTOx
50.8
N
Phos
FZ
-100
2000-5000
275-325
P/P
PRIME
50.8
N
Phos
CZ
-100
450-500
P/P
PRIME
50.8
N
Phos
CZ
-100
43485
500-550
P/E
PRIME
50.8
N
Phos
CZ
-100
1000-1050
P/E
PRIME
50.8
N
Phos
CZ
-100
1-20
2900-3100
P/E
PRIME
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.
PAM-XIAMEN develops advanced crystal [...]
2019-02-27meta-author
Abstract
The growth of thick epitaxial SiC layers needed for high-voltage, high-power devices is investigated with the chloride-based chemical vapor deposition. High growth rates exceeding 100 μm/h can be obtained, however to obtain device quality epilayers adjustments of the process parameters should be carried out appropriately [...]
2017-09-05meta-author