We offer GaAs Epitaxial Wafers for Schottky Diode as follows:
1. GaAs Schottky Diode Epi Structures
No.1 GaAs Schottky Diode Epiwafer
Epitaxial Structure PAM210319
No.
Material
Composition
Thickness Target(um)
Thickness Tol.
C/C(cm3) Target
C/C Tol.
Dopant
Carrrier Type
4
GaAs
1.00
±10%
>5.0E18
N/A
Si
N++
3
GaAs
0.28
±10%
2.0E17
±10%
Si
N
2
Ga1-xAlxAs
x=0.50
1
±10%
—
N/A
—
—
1
GaAs
0.05
±10%
—
N/A
—
—
Substrate: 2”,3”,4″
No.2 4Inch GaAs Epitaxial Wafer for Schottky Diode
PAM210326 -SDE
No.
Material
Thickness
Doping
Doping Concentration
3
GaAs schottky contact layer
–
n
–
2
GaAs ohmic contact layer
–
–
5×10^18 cm-3
1
Low temperature GaAs
2um
–
–
0
Semi-insulating GaAs (100) [...]
This paper reports the mechanical and electrical characteristics of Ge/Ge interfaces prepared by room-temperature surface-activated bonding (SAB). Bonded Ge/Ge wafer pairs with high bonding strength equivalent to that of the bulk material were achieved without any heat treatment. It was found that the bonding [...]
2018-11-12meta-author
The application fields of SiC wafers and GaN wafers are mainly divided into electronic power field, radio frequency field, optoelectronic field, and other fields. Among them, electronic power field and radio frequency field are the most important applications, and the advantages of using SiC material are obvious. These two areas have [...]
2021-04-20meta-author
Through continuous efforts, PAM-XIAMEN has developed large-scale COP-free CZ silicon (Si) wafers, and effectively controlled the generation of COP in the ingot by improving the thermal field of crystal pulling, thereby achieving performance improvement and power consumption reduction. The 8-inch silicon wafer application process [...]
2022-06-06meta-author
Weak ultraviolet light detection has important application prospects in fields such as fire warning, corona detection, and deep space detection. Avalanche photodiodes (APDs) have the advantages of high quantum efficiency, high gain, and ease of integration, making it more suitable for detecting ultraviolet light. In terms [...]
2023-11-10meta-author
PAM XIAMEN offers 4″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
p-type Si:B
[110] ±0.5°
4″
500
P/E
FZ >10,000
Prime, TTV<5μm
p-type Si:B
[110] ±0.5°
4″
200
P/P
FZ 1-2
SEMI Prime
p-type Si:B
[110] ±0.5°
4″
200
P/P
FZ 1-2
Prime
p-type Si:B
[110] ±0.5°
4″
200
P/P
FZ 1-2
SEMI Prime, Extra 8 scratched wafers in cassette free of charge
p-type Si:B
[100]
4″
220 ±10
P/E
FZ >10,000
SEMI Prime
p-type Si:B
[100]
4″
230 ±10
P/E
FZ >10,000
SEMI Prime
p-type Si:B
[100-4° towards[110]] ±0.5°
4″
525
P/E
FZ >2,000
SEMI Prime, TTV<5μm
p-type Si:B
[100]
4″
450
P/P
FZ 1,000-2,000
SEMI Prime
p-type Si:B
[100]
4″
420
C/C
FZ 850-900
SEMI Prime
p-type Si:B
[100]
4″
200 ±10
P/P
FZ 100-120
SEMI Prime
p-type Si:B
[100]
4″
250
P/P
FZ 1-3 {0.97-1.01}
SEMI [...]
2019-03-05meta-author