Due to the advantages of high thermal conductivity, high breakdown field strength, high saturation electron drift rate and high bonding energy, SiC material can meet the new requirements of modern electronic technology for high temperature, high frequency, high power, high voltage and radiation resistance, [...]
2022-09-16meta-author
PAM XIAMEN offers 1″ silicon wafers.
If you don’t see what you need, pleaes email us your specs and quantity.
Item
Dia
Thickness (um)
Orientation
Type
Dopant
Resistivity
(Ohm-cm)
Polish
Remark
PAM1901
25.4mm
20000um
<111>
P
B
>1000
DSP
FZ
PAM1902
25.4mm
400um
<100>
P
B
ANY
SSP
Thickness is: 400+/-100um.
PAM1903
25.4mm
500um
<100>
ANY
SSP
Wafers have particles. Wafers sold “As-Is”.
PAM1904
25.4mm
280um
<111>
Undoped
Undoped
>2000
SSP
Intrinsic FZ
PAM1905
25.4mm
73.5um
<100>
Undoped
Undoped
>5000
DSP
FZ, Float Zone
PAM1906
25.4mm
500um
<100>
P
B
.01-.05
DSP
NO flats, COMPLETELY round. Minimum Order Quantity 5 wafers.
Item
Material
Orient.
Diam
(mm)
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
PAM1907
p-type Si:B
[100]
1″
280um
P/E
0-100 ohm-cm
SEMI, 1Flat, Soft cst
PAM1908
Intrinsic Si:-
[111]
1″
280um
P/E
FZ [...]
2019-02-21meta-author
PAM XIAMEN offers BaSrTiO3 Film on substrate.
BaSrTiO3 Film ( 400nm) on Nb.SrTiO3(wt 0.7%), 10x10x0.5mm,1sp
Ba1-xSrxTiO3 is an excellent enhanced dielectronic film grown on Nb doped SrTiO3 conductive substrate via special spin coating:
Film Sppecifications:
Chemical composition: BaSrTiO3
Film thickness: ~ 400 nm
Crystalline: Polycrystal
Growth [...]
2019-04-26meta-author
PAM-XIAMEN can offer SiC substrate and epitaxy wafer for fabricating IGBT devices. The emergence of the third-generation wide-bandgap semiconductor SiC wafer has shown stronger competitiveness in the fields of high voltage, high temperature, and high power. The n-IGBT (insulated gate bipolar transistor) is further [...]
2022-04-14meta-author
Sapphire Substrate Market in 2013
Will cell phone windows come to the rescue?
Significant overcapacity and low LED substrate prices will affect the profitability and viability of many sapphire players in 2013 and beyond, but emerging applications could transform the industry.
The sapphire material shortage experienced from [...]
2013-01-10meta-author
PAM XIAMEN offers 4″ FZ Intrinsic Si wafer
SEMI-PRIME, FZ, 4″, Intrinsic/Undoped, <1-0-0>, >10,000 ohm-cm, 500±15um, SSP, TTV<5um, Bow<30um, Warp <30um,
Flats: 1 Flat.
Particle @0.3µm, <20count
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2021-03-18meta-author