Si (Bare Prime, thermisches Oxid, Pt beschichtet & Solarzellen-Grade) -8

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Si (Bare Prime, thermisches Oxid, Pt beschichtet & Solarzellen-Grade) -8

PAM XIAMEN bietet Si (Bare Prime, thermisches Oxid, Pt beschichtet & Solarzellen-Grade).

PAM XIAMEN liefert alle Arten von Silicon-Wafer von 1 "bis 8" im Durchmesser. spezialisiert auf die Herstellung von Si-Wafer mit verschiedenen Spezial Größe und Ausrichtung besonders.

6 "Durchmesser Oblaten

Si-Wafer (100), 6“Durchmesser x 0,65 bis 0,7 mm, 1SP N-Typ (P-dotiert) mit spezifischen Widerständen: 1-20 ohm-cm

Si-Wafer (111), 6“Durchmesser x 0,65 bis 0,7 mm, 1SP P-Typ (B dotiert) mit spezifischen Widerständen: 5-10 Ohm-cm

Si-Wafer (111), 6“Durchmesser x 0,65 bis 0,7 mm, 1SP P-Typ (B dotiert) mit spezifischen Widerständen: 5-10 Ohm-cm

Für weitere Informationen, besuchen Sie bitte unsere Website: https://www.powerwaywafer.com,
Bitte senden Sie uns E-Mail an sales@powerwaywafer.com und powerwaymaterial@gmail.com

Gefunden 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) ist ein führender Hersteller von Halbleitermaterial in China.PAM-XIAMEN entwickeln fortschrittliches Kristallwachstum und die Epitaxie-Technologien, Herstellungsverfahren, engineered Substrate und Halbleitervorrichtungen.PAM-Xiamens Technologien ermöglichen eine höhere Leistung und geringeren Kosten der Herstellung von Halbleiter-Wafers.

PAM-XIAMEN entwickeln fortschrittliche Kristallwachstum und die Epitaxie-Technologien, reicht von der ersten Generation Germanium-Wafer, die zweite Generation Galliumarsenid- mit Substratwachstum und Epitaxie auf III-V-Silizium-dotierten n-Typ-Halbleitermaterialien auf Basis von Ga, Al, In, As und P gezüchtet durch MBE oder MOCVD, auf die dritte Generation: Siliciumcarbid und Galliumnitrid für LED und Stromversorgungsgerät Anwendung.

2019-05-15

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