Silicon Wafer | |||||||||||
Si wafer Substrate -Silicon | |||||||||||
Quantity | Material | Orientation. | Diameter | Thickness | Polish | Resistivity | Type Dopant | Nc | Mobility | EPD | |
PCS | (mm) | (μm) | Ω·cm | a/cm3 | cm2/Vs | /cm2 | |||||
1-100 | Si | N/A | 25.4 | 280 | SSP | 1-100 | P/b | N/A | N/A | N/A | |
1-100 | Si | N/A | 25.4 | 280 | SSP | 1-100 | P/b | (1-200)E16 | N/A | N/A | |
1-100 | Si | (100) | 25.4 | 525 | N/A | <0.005 | N/A | N/A | N/A | N/A | |
1-100 | Si | (100) | 25.4 | 525±25 | SSP | <0.005 | N/A | N/A | N/A | N/A | |
1-100 | Si with Oxide layer | (100) | 25.4 | 525±25 | SSP | <0.005 | N/A | N/A | N/A | N/A | |
1-100 | Si | (100) | 25.4 | 350-500 | SSP | 1~10 | N/A | N/A | N/A | N/A | |
1-100 | Si | (100) | 25.4 | 400±25 | P/E | <0.05 | P/ | N/A | N/A | N/A | |
1-100 | Si | (100) | 50.4 | 400±25 | P/E | <0.05 | P/ | N/A | N/A | N/A | |
1-100 | p-Si with 90 nm SiO2 | (100) | 50.4 | 500±25 | P/E | <0.05 | P/ | N/A | N/A | N/A | |
1-100 | n-Si with 90 nm SiO2 | (100) | 50.4 | 500±25 | P/E | <0.05 | N/ | N/A | N/A | N/A | |
1-100 | p-Si with 285 nm SiO2 | (100) | 50.4 | 500±25 | P/E | <0.05 | N/ | N/A | N/A | N/A | |
1-100 | n-Si with 285 nm SiO2 | (100) | 50.4 | 500±25 | P/E | <0.05 | N/ | N/A | N/A | N/A | |
1-100 | Si with electrodes | (100) | 50.8 | 400 | N/A | <0.05 | N/p | 1E14-1E15 | N/A | N/A | |
1-100 | Si | (100) | 50.8 | 275 | SSP | 1~10 | N/A | N/A | N/A | N/A | |
1-100 | Si | (100) | 50.8 | 275±25 | SSP | 1~10 | N/p | N/A | N/A | N/A | |
1-100 | Si | (111) | 50.8 | 350±15 | SSP | >10000 | N/A | N/A | N/A | N/A | |
1-100 | Si | (100) | 50.8 | 430±15 | SSP | 5000-8000 | N/A | N/A | N/A | N/A | |
1-100 | Si | (111) | 50.8 | 410±15 | SSP | 1~20 | N/A | N/A | N/A | N/A | |
1-100 | Si | (111) | 50.8 | 400-500 | SSP | >5000 | N/A | N/A | N/A | N/A | |
1-100 | Si | (100) | 50.8 | 525±25 | SSP | 1~50 | N/A | N/A | N/A | N/A | |
1-100 | Si | (100) | 50.8 | 500±25 | SSP | 1~10 | N P | N/A | N/A | N/A | |
1-100 | Si | (100) | 50.8 | 500±25 | P/P | >700 | P/ | N/A | N/A | N/A | |
1-100 | Si | (100) | 76.2 | 400±25 | P/E | <0.05 | P/ | N/A | N/A | N/A | |
1-100 | p-Si with 90 nm SiO2 | (100) | 76.2 | 500±25 | P/E | <0.05 | P/ | N/A | N/A | N/A | |
1-100 | n-Si with 90 nm SiO2 | (100) | 76.2 | 500±25 | P/E | <0.05 | N/ | N/A | N/A | N/A | |
1-100 | p-Si with 285 nm SiO2 | (100) | 76.2 | 500±25 | P/E | <0.05 | N/ | N/A | N/A | N/A | |
1-100 | n-Si with 285 nm SiO2 | (100) | 76.2 | 500±25 | P/E | <0.05 | N/ | N/A | N/A | N/A | |
1-100 | Si | (100) | 100 | 625 | SSP | >10000 | N/A | N/A | N/A | N/A | |
1-100 | Si | (100) | 100 | 525 | SSP | N/A | N/P | N/A | N/A | N/A | |
1-100 | Si | (100) | 100 | 320 | SSP | >2500ohm·cm | P/b | N/A | N/A | N/A | |
1-100 | Si | (100) | 100 | N/A | SSP | 10~30 | N/p | N/A | N/A | N/A | |
1-100 | Si | (100) | 100 | 505±25 | SSP | 0.005-0.20 | N/P-doped | N/A | N/A | N/A | |
1-100 | Si | (100) | 100 | 381 | SSP | 0.005-0.20 | N/P-doped | N/A | N/A | N/A | |
1-100 | Si | (100) | 100 | 525 | DSP | 1-100 | N/A | N/A | N/A | N/A | |
1-100 | Si | (100) | 100 | 525 | DSP | 1-100 | N/A | N/A | N/A | N/A | |
1-100 | Si | (100) | 100 | 625±25 | SSP | 0.001-0.004 | N/A | N/A | N/A | N/A | |
1-100 | Si with Oxide layer 3000A | (100) | 100 | 675±25 | SSP | 0.001-0.004 | N/A | N/A | N/A | N/A | |
1-100 | Si | (100) | 100 | 625±25 | SSP | 0.001-0.004 | N/A | N/A | N/A | N/A | |
1-100 | Si | (100) | 100 | N/A | SSP | N/A | P/b | N/A | N/A | N/A | |
1-100 | Si | (100) | 100 | 500±25 | SSP | 1~25 | N/A | N/A | N/A | N/A | |
1-100 | Si | (100) | 100 | 500 | SSP | 1~10 | P/ | N/A | N/A | N/A | |
1-100 | Si | (100) | 100 | 500±25 | P/E | 1-10 | N/ | N/A | N/A | N/A | |
1-100 | Si | (100) | 100 | 500/525±25 | P/P | 1-10 | N/ | N/A | N/A | N/A | |
1-100 | Si | (100) | 100 | 500/525±25 | N/A | N/A | N/A | N/A | N/A | N/A | |
1-100 | Si | (100) | 100 | 500±25 | P/P | >700 | P/ | N/A | N/A | N/A | |
1-100 | Si | (100) | 150 | 675±25 | N/A | 0.001-0.004 | P/b | N/A | N/A | N/A | |
1-100 | Si | (100) | 150 | 675±25 | N/A | 0.001-0.004 | P/b | N/A | N/A | N/A | |
1-100 | Si | (100)/(111) | 150 | 550~650 | DSP | N/A | N/A | N/A | N/A | N/A | |
1-100 | Si | (100)/(111) | 150 | 600-700 | SSP | <0.5 | N/A | N/A | N/A | N/A | |
1-100 | Si | (111) | 150 | 400±25 | DSP | <50 | N/ | N/A | N/A | N/A | |
1-100 | Si | (100) | 150 | 545 | P/E | 1-3 | N/ | N/A | N/A | N/A | |
1-100 | Si | (100) | 200 | 725±25 | SSP | 1~25 | P/ | N/A | N/A | N/A |
As a Silicon wafer supplier,we offer Silicon carbide list for your reference, if you need price detail, please contact our sales team.
Note:
- As manufacturer, we also accept small quantity for researcher or foundry.
- Delivery time: it depends on stock we have, if we have stock, we can ship to you soon.